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    BULK ACOUSTIC RESONATOR ELECTRICAL IMPEDANCE TRANSFORMERS
    2.
    发明申请
    BULK ACOUSTIC RESONATOR ELECTRICAL IMPEDANCE TRANSFORMERS 有权
    大容量谐波谐振器电气阻抗变压器

    公开(公告)号：US20090273415A1

    公开(公告)日：2009-11-05

    申请号：US12112633

    申请日：2008-04-30

    Applicant: Michael L. Frank ,  Richard C. Ruby ,  Tiberiu Jamneala

    Inventor： Michael L. Frank ,  Richard C. Ruby ,  Tiberiu Jamneala

    IPC: H03H9/54

    CPC classification number: H03H9/587 ,  H03H9/0095 ,  H03H9/132 ,  H03H9/583

    Abstract: An electrical impedance transformer comprises a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency. The electrical impedance transformer also comprises: a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR. The electrical impedance transformer also includes a decoupling layer disposed between the first and the second FBARs. The first electrical impedance differs from the second electrical impedance and the first and second resonance frequencies are substantially the same.

    Abstract translation: 电阻抗变压器包括具有第一电阻抗和第一谐振频率的第一膜体声波谐振器（FBAR）。 电阻抗变压器还包括：第二FBAR，具有第二电阻抗和第二谐振频率，并且设置在第一FBAR上。 电阻抗变压器还包括设置在第一和第二FBAR之间的去耦层。 第一电阻抗与第二电阻抗不同，第一和第二谐振频率基本上相同。

    Bulk acoustic resonator electrical impedance transformers
    3.
    发明授权
    Bulk acoustic resonator electrical impedance transformers 有权
    体积谐振器电阻抗变压器

    公开(公告)号：US07855618B2

    公开(公告)日：2010-12-21

    申请号：US12112633

    申请日：2008-04-30

    Applicant: Michael L. Frank ,  Richard C. Ruby ,  Tiberiu Jamneala

    Inventor： Michael L. Frank ,  Richard C. Ruby ,  Tiberiu Jamneala

    IPC: H03H9/00 ,  H03H9/15

    CPC classification number: H03H9/587 ,  H03H9/0095 ,  H03H9/132 ,  H03H9/583

    Abstract: An electrical impedance transformer comprises a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency. The electrical impedance transformer also comprises: a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR. The electrical impedance transformer also includes a decoupling layer disposed between the first and the second FBARs. The first electrical impedance differs from the second electrical impedance and the first and second resonance frequencies are substantially the same.

    Abstract translation: 电阻抗变压器包括具有第一电阻抗和第一谐振频率的第一膜体声波谐振器（FBAR）。 电阻抗变压器还包括：第二FBAR，具有第二电阻抗和第二谐振频率，并且设置在第一FBAR上。 电阻抗变压器还包括设置在第一和第二FBAR之间的去耦层。 第一电阻抗与第二电阻抗不同，第一和第二谐振频率基本上相同。

    Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method
    4.
    发明授权
    Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method 有权
    制造薄膜体声共振器（FBAR）的方法和体现该方法的FBAR结构

    公开(公告)号：US06714102B2

    公开(公告)日：2004-03-30

    申请号：US09798496

    申请日：2001-03-01

    Applicant: Richard C. Ruby ,  Paul Bradley ,  Yury Oshmyansky ,  Domingo A. Figueredo

    Inventor： Richard C. Ruby ,  Paul Bradley ,  Yury Oshmyansky ,  Domingo A. Figueredo

    IPC: H03H900

    CPC classification number: H03H3/02

    Abstract: A method for fabricating an acoustic resonator, for example a Thin Film Bulk Acoustic Resonators (FBAR), on a substrate. A depression is etched and filled with sacrificial material. The FBAR is fabricated on the substrate spanning the depression, the FBAR having an etch hole. The depression may include etch channels in which case the FBAR may include etch holes aligned with the etch channels. A resonator resulting from the application of the technique is suspended in air and includes at least one etch hole and may include etch channels.

    Abstract translation: 一种用于在衬底上制造声共振器的方法，例如薄膜体声波谐振器（FBAR）。 蚀刻凹陷并填充牺牲材料。 FBAR制造在跨越凹陷的衬底上，FBAR具有蚀刻孔。 凹陷可以包括蚀刻通道，在这种情况下，FBAR可以包括与蚀刻通道对准的蚀刻孔。 由施加该技术产生的共振器悬浮在空气中并且包括至少一个蚀刻孔，并且可以包括蚀刻通道。

    Controlled effective coupling coefficients for film bulk acoustic resonators
    5.
    发明授权
    Controlled effective coupling coefficients for film bulk acoustic resonators 有权
    薄膜体声共振器的受控有效耦合系数

    公开(公告)号：US06472954B1

    公开(公告)日：2002-10-29

    申请号：US09841234

    申请日：2001-04-23

    Applicant: Richard C. Ruby ,  Paul Bradley ,  Domingo Figueredo ,  John D. Larson, III ,  Yury Oshmyansky

    Inventor： Richard C. Ruby ,  Paul Bradley ,  Domingo Figueredo ,  John D. Larson, III ,  Yury Oshmyansky

    IPC: H03H9205

    CPC classification number: H03H9/706 ,  H03H3/04 ,  H03H9/0571 ,  H03H9/587 ,  H03H2003/0471 ,  Y10T29/42

    Abstract: In an array of acoustic resonators, the effective coupling coefficient of first and second filters are individually tailored in order to achieve desired frequency responses. In a duplexer embodiment, the effective coupling coefficient of a transmit band-pass filter is lower than the effective coupling coefficient of a receive band-pass filter of the same duplexer. In one embodiment, the tailoring of the coefficients is achieved by varying the ratio of the thickness of a piezoelectric layer to the total thickness of electrode layers. For example, the total thickness of the electrode layers of the transmit filter may be in the range of 1.2 to 2.8 times the total thickness of the electrode layers of the receive filter. In another embodiment, the coefficient tailoring is achieved by forming a capacitor in parallel with an acoustic resonator within the filter for which the effective coupling coefficient is to be degraded. Preferably, the capacitor is formed of the same materials used to fabricate a film bulk acoustic resonator (FBAR). The capacitor may be mass loaded to change its frequency by depositing a metal layer on the capacitor. Alternatively, the mass loading may be provided by forming the capacitor directly on a substrate.

    Abstract translation: 在声谐振器阵列中，分别对第一和第二滤波器的有效耦合系数进行定制，以实现期望的频率响应。 在双工器实施例中，发射带通滤波器的有效耦合系数低于同一双工器的接收带通滤波器的有效耦合系数。 在一个实施例中，通过改变压电层的厚度与电极层的总厚度之比来实现系数的调整。 例如，发射滤波器的电极层的总厚度可以在接收滤波器的电极层的总厚度的1.2至2.8倍的范围内。 在另一个实施例中，通过与滤波器内的声谐振器并联形成电容器来实现系数调整，有效耦合系数将被降低。 优选地，电容器由用于制造膜体声波谐振器（FBAR）的相同材料形成。 可以通过在电容器上沉积金属层来对电容器进行质量负载以改变其频率。 或者，可以通过将电容器直接形成在基板上来提供质量负载。

    Bulk acoustic wave resonator with improved lateral mode suppression
    6.
    发明授权
    Bulk acoustic wave resonator with improved lateral mode suppression 有权
    具有改进的横向模式抑制的体声波谐振器

    公开(公告)号：US06215375B1

    公开(公告)日：2001-04-10

    申请号：US09282082

    申请日：1999-03-30

    Applicant: John D. Larson, III ,  Richard C. Ruby ,  Paul Bradley

    Inventor： John D. Larson, III ,  Richard C. Ruby ,  Paul Bradley

    IPC: H03H917

    CPC classification number: H03H9/174 ,  H03H9/132 ,  H03H9/585

    Abstract: A bulk acoustic wave device that provides a high spectral purity, high Q, resonator in the radio frequency and microwave frequency ranges. Such resonators may be coupled together to form filters or other frequency selective devices. The bulk acoustical wave filter is constructed from a piezoelectric (PZ) material having a first surface and a second surface and first and second electrodes. The first electrode includes an electrically conducting layer on the first surface, and the second electrode includes an electrically conducting layer on the second surface. The first electrode overlies at least a portion of the second electrode, the portion of the first electrode that overlies the second electrode has a periphery which is a non-rectangular, irregular polygon. In the preferred embodiment of the present invention, the periphery is a three-sided, four-sided, or n-sided irregular polygon in which no two sides are parallel to one another.

    Abstract translation: 一种在射频和微波频率范围内提供高光谱纯度，高Q谐振器的体声波器件。 这样的谐振器可以耦合在一起以形成滤波器或其它频率选择装置。 本体声波滤波器由具有第一表面和第二表面以及第一和第二电极的压电（PZ）材料构成。 第一电极在第一表面上包括导电层，第二电极在第二表面上包括导电层。 第一电极覆盖第二电极的至少一部分，第一电极的覆盖第二电极的部分具有非矩形的不规则多边形的周边。 在本发明的优选实施例中，周边是没有两个侧面彼此平行的三面，四面或者n面的不规则多边形。

    Passband filter having an asymmetrical filter response
    7.
    发明授权
    Passband filter having an asymmetrical filter response 失效
    带通滤波器具有不对称滤波器响应

    公开(公告)号：US06462631B2

    公开(公告)日：2002-10-08

    申请号：US09783773

    申请日：2001-02-14

    Applicant: Paul Bradley ,  Richard C. Ruby

    Inventor： Paul Bradley ,  Richard C. Ruby

    IPC: H03H958

    CPC classification number: H03H9/605

    Abstract: A filter, such as a transmit filter of a duplexer, includes an array of acoustic resonators that cooperate to establish an asymmetrically shaped filter response over a target frequency passband. The acoustic resonators are preferably film bulk acoustic resonators (FBARs). The filter response defines an insertion loss profile in which a minimum insertion loss within the target passband is located at or near a first end of the frequency passband, while the maximum insertion loss is located at or near the opposite end of the frequency passband. In the transmit filter embodiment, the minimum insertion loss is at or near the high frequency end of the filter response, which is tailored by selectively locating poles and zeros of the array of FBARs.

    Abstract translation: 诸如双工器的发射滤波器的滤波器包括声谐振器阵列，其协作以在目标频率通带上建立不对称形状的滤波器响应。 声谐振器优选为薄膜体声波谐振器（FBAR）。 滤波器响应定义了插入损耗曲线，其中目标通带内的最小插入损耗位于频率通带的第一端处或接近频率通带的第一端，而最大插入损耗位于或接近频率通带的相对端。 在发射滤波器实施例中，最小插入损耗处于或接近滤波器响应的高频端，其通过选择性地定位FBAR阵列的极点和零点来定制。

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