发明授权
US06710681B2 Thin film bulk acoustic resonator (FBAR) and inductor on a monolithic substrate and method of fabricating the same
失效
单片基板上的薄膜体声波谐振器（FBAR）和电感器及其制造方法
- 专利标题： Thin film bulk acoustic resonator (FBAR) and inductor on a monolithic substrate and method of fabricating the same
- 专利标题（中）： 单片基板上的薄膜体声波谐振器（FBAR）和电感器及其制造方法
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申请号： US09906581申请日： 2001-07-13
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公开(公告)号： US06710681B2公开(公告)日： 2004-03-23
- 发明人: Domingo A. Figueredo , Richard C. Ruby , Yury Oshmyansky , Paul Bradley
- 申请人： Domingo A. Figueredo , Richard C. Ruby , Yury Oshmyansky , Paul Bradley
- 主分类号： H03H954
- IPC分类号： H03H954
摘要：
An apparatus having both a resonator and an inductor fabricated on a single substrate and a method of fabricating the apparatus are disclosed. The apparatus includes a resonator and an inductor that is connected to the resonator. Both the resonator and the inductor are fabricated over their respective cavities to produce a high Q-factor filter circuit.
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