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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12125779B2

    公开(公告)日：2024-10-22

    申请号：US18348478

    申请日：2023-07-07

    申请人： ROHM CO., LTD.

    发明人： Hiroaki Matsubara ,  Kaori Sumitomo ,  Maki Moroi ,  Naoki Kinoshita

    IPC分类号： H01L23/498

    CPC分类号： H01L23/49844 ,  H01L23/49811 ,  H01L23/49822

    摘要： A semiconductor device includes: a chip; a circuit element formed in the chip; an insulating layer formed over the chip so as to cover the circuit element; a multilayer wiring region formed in the insulating layer and including a plurality of wirings laminated and arranged in a thickness direction of the insulating layer so as to be electrically connected to the circuit element; at least one insulating region which does not include the wirings in an entire region in the thickness direction of the insulating layer and is formed in a region outside the multilayer wiring region in the insulating layer; and at least one terminal electrode disposed over the insulating layer so as to face the chip with the at least one insulating region interposed between the at least one terminal electrode and the chip.

    Electronic device and mounting structure of the same
    2.
    发明授权
    Electronic device and mounting structure of the same 有权

    公开(公告)号：US10790258B2

    公开(公告)日：2020-09-29

    申请号：US16217605

    申请日：2018-12-12

    申请人： ROHM CO., LTD.

    发明人： Hiroaki Matsubara ,  Yasumasa Kasuya ,  Taro Nishioka

    IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L23/544 ,  H01L23/31 ,  H01L21/48

    摘要： An electronic device includes an electronic element, a plurality of first sub-electrodes arrayed in a first direction, a plurality of second sub-electrodes arrayed in a second direction that is orthogonal to the first direction, a dummy electrode, and a sealing resin. The sealing resin has a resin back surface from which the plurality of first sub-electrodes, the plurality of second sub-electrodes and the dummy electrode are exposed. The plurality of second sub-electrodes are located further in the first direction than any of the plurality of first sub-electrodes. The plurality of first sub-electrodes are located further in the second direction than any of the plurality of second sub-electrodes. The dummy electrode is located further in the first direction than any of the plurality of first sub-electrodes, and is located further in the second direction than any of the plurality of second sub-electrodes.

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12068229B2

    公开(公告)日：2024-08-20

    申请号：US18339616

    申请日：2023-06-22

    申请人： ROHM CO., LTD.

    发明人： Hiroaki Matsubara

    IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L23/31

    CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49524 ,  H01L24/48 ,  H01L2224/48175

    摘要： A semiconductor device includes a first die pad, a second die pad, a first semiconductor element, a second semiconductor element, an insulating element, first terminals, second terminals, and a sealing resin. The sealing resin has a first side surface located on one side of a first direction, a second side surface located on the other side of the first direction, and third and fourth side surfaces that are separated from each other in a second direction orthogonal to both a thickness direction and the first direction and are connected to the first and second side surfaces. A first gate mark having a surface roughness larger than the other regions of the third side surface is formed on the third side surface. When viewed along the second direction, the first gate mark overlaps a pad gap provided between the first die pad and the second die pad in the first direction.

    Plurality of lead frames electrically connected to inductor chip
    5.
    发明授权
    Plurality of lead frames electrically connected to inductor chip 有权

    公开(公告)号：US11177198B2

    公开(公告)日：2021-11-16

    申请号：US16671699

    申请日：2019-11-01

    申请人： ROHM CO., LTD.

    发明人： Hiroaki Matsubara ,  Yasumasa Kasuya

    IPC分类号： H01L21/00 ,  H01L23/495 ,  H05K5/02 ,  H01L21/56 ,  H01L23/00 ,  H01L21/48 ,  H01L23/64 ,  H01L23/31

    摘要： A semiconductor device includes a semiconductor element circuit, a conductive support and a sealing resin. The conductive support includes a die pad, first terminals spaced in a first direction, second terminals spaced in the first direction and opposite to the first terminals in a second direction perpendicular to the first direction, and a support terminal connected to the die pad. The sealing resin encapsulates portions of the first and second terminals, a portion of the support terminal, the semiconductor element circuit and the die pad. The sealing resin has two first side surfaces spaced apart in the second direction and two second side surfaces spaced apart in the first direction. The first terminals and second terminals are exposed from the first side surfaces, while none of the elements of the conductive support is exposed from the second side surfaces.

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11728253B2

    公开(公告)日：2023-08-15

    申请号：US17465936

    申请日：2021-09-03

    申请人： ROHM CO., LTD.

    发明人： Hiroaki Matsubara

    IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L23/00

    CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49524 ,  H01L24/48 ,  H01L2224/48175

    摘要： A semiconductor device includes a first die pad, a second die pad, a first semiconductor element, a second semiconductor element, an insulating element, first terminals, second terminals, and a sealing resin. The sealing resin has a first side surface located on one side of a first direction, a second side surface located on the other side of the first direction, and third and fourth side surfaces that are separated from each other in a second direction orthogonal to both a thickness direction and the first direction and are connected to the first and second side surfaces. A first gate mark having a surface roughness larger than the other regions of the third side surface is formed on the third side surface. When viewed along the second direction, the first gate mark overlaps a pad gap provided between the first die pad and the second die pad in the first direction.

    Electronic device and mounting structure of the same
    10.
    发明授权
    Electronic device and mounting structure of the same 有权

    公开(公告)号：US10192845B2

    公开(公告)日：2019-01-29

    申请号：US15905324

    申请日：2018-02-26

    申请人： ROHM CO., LTD.

    发明人： Hiroaki Matsubara ,  Yasumasa Kasuya ,  Taro Nishioka

    IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/544 ,  H01L23/31 ,  H01L23/495 ,  H01L21/48

    摘要： An electronic device includes an electronic element, a plurality of first sub-electrodes arrayed in a first direction, a plurality of second sub-electrodes arrayed in a second direction that is orthogonal to the first direction, a dummy electrode, and a sealing resin. The sealing resin has a resin back surface from which the plurality of first sub-electrodes, the plurality of second sub-electrodes and the dummy electrode are exposed. The plurality of second sub-electrodes are located further in the first direction than any of the plurality of first sub-electrodes. The plurality of first sub-electrodes are located further in the second direction than any of the plurality of second sub-electrodes. The dummy electrode is located further in the first direction than any of the plurality of first sub-electrodes, and is located further in the second direction than any of the plurality of second sub-electrodes.