公开(公告)号：US20190139966A1

公开(公告)日：2019-05-09

申请号：US16239835

申请日：2019-01-04

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Koji NII ,  Makoto YABUUCHI ,  Yasumasa TSUKAMOTO ,  Kengo MASUDA

IPC: H01L27/11 ,  G11C11/412 ,  H01L29/10 ,  H01L27/02 ,  H01L21/265 ,  H01L29/66

Abstract: In a region just below an access gate electrode in an SRAM memory cell, a second halo region is formed adjacent to a source-drain region and a first halo region is formed adjacent to a first source-drain region. In a region just below a drive gate electrode, a third halo region is formed adjacent to the third source-drain region and a fourth halo region is formed adjacent to a fourth source-drain region. The second halo region is set to have an impurity concentration higher than the impurity concentration of the first halo region. The third halo region is set to have an impurity concentration higher than the impurity concentration of the fourth halo region. The impurity concentration of the first halo region and the impurity concentration of the fourth halo region are different from each other.

公开(公告)号：US20180342522A1

公开(公告)日：2018-11-29

申请号：US16014920

申请日：2018-06-21

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Koji NII ,  Makoto YABUUCHI ,  Yasumasa TSUKAMOTO ,  Kengo MASUDA

IPC: H01L27/11 ,  G11C11/412 ,  H01L29/10 ,  H01L29/66 ,  H01L27/02 ,  H01L21/265

CPC classification number: H01L27/11 ,  G11C11/412 ,  H01L21/26586 ,  H01L27/0207 ,  H01L27/1104 ,  H01L29/1083 ,  H01L29/66659

Abstract: In a region just below an access gate electrode in an SRAM memory cell, a second halo region is formed adjacent to a source-drain region and a first halo region is formed adjacent to a first source-drain region. In a region just below a drive gate electrode, a third halo region is formed adjacent to the third source-drain region and a fourth halo region is formed adjacent to a fourth source-drain region. The second halo region is set to have an impurity concentration higher than the impurity concentration of the first halo region. The third halo region is set to have an impurity concentration higher than the impurity concentration of the fourth halo region. The impurity concentration of the first halo region and the impurity concentration of the fourth halo region are different from each other.