Supporting different LTE-TDD configurations in neighboring regions and/or adjacent carriers
    4.
    发明授权
    Supporting different LTE-TDD configurations in neighboring regions and/or adjacent carriers 有权
    在相邻区域和/或相邻载波中支持不同的LTE-TDD配置

    公开(公告)号:US09585156B2

    公开(公告)日:2017-02-28

    申请号:US13672458

    申请日:2012-11-08

    CPC classification number: H04W72/082 H04B7/2656 H04L5/1484 H04W16/14 H04W72/12

    Abstract: When communications of a single radio access technology (RAT), or different radio access technologies in a proximate communication spectrum are operating at the same time, potential interference between devices may occur. To reduce the interference, the time division duplex (TDD) configuration of one or more conflicting device may be altered. For example, at the edge of a communication region, TDD configurations used by edge base stations to communicate with mobile devices may be set to reduce interference. As another example, communications of a first device may be altered so the first device schedules uplink communications when a second device also has uplink communications scheduled. Other configurations may also be implemented.

    Abstract translation: 当单个无线电接入技术(RAT)或邻近通信频谱中的不同无线电接入技术的通信同时工作时,可能发生设备之间的潜在干扰。 为了减少干扰,可以改变一个或多个冲突设备的时分双工(TDD)配置。 例如,在通信区域的边缘,可以设置边缘基站用于与移动设备通信的TDD配置,以减少干扰。 作为另一示例,可以改变第一设备的通信,使得当第二设备还具有调度的上行链路通信时,第一设备调度上行链路通信。 也可以实现其他配置。

    Packed terminal transistors
    5.
    发明授权

    公开(公告)号:US12113017B2

    公开(公告)日:2024-10-08

    申请号:US17651561

    申请日:2022-02-17

    CPC classification number: H01L23/528 H01L23/5226 H01L29/785

    Abstract: A die includes fins extending in a first direction, a gate formed over the fins, the gate extending in a second direction that is perpendicular to the first direction, a first source/drain contact layer formed over the fins and extending in the second direction, and a second source/drain contact layer formed over the fins and extending in the second direction, wherein the first source/drain contact layer and the second source/drain contact layer are on opposite sides of the gate. The die also includes a first source/drain metal layer electrically coupled to the first source/drain contact layer, and a second source/drain metal layer electrically coupled to the second source/drain contact layer, wherein the first source/drain metal layer and the second source/drain metal layer do not overlap one or more of the fins.

    Supporting Different LTE-TDD Configurations in Neighboring Regions and/or Adjacent Carriers
    9.
    发明申请
    Supporting Different LTE-TDD Configurations in Neighboring Regions and/or Adjacent Carriers 有权
    支持相邻区域和/或相邻载波中的不同LTE-TDD配置

    公开(公告)号:US20130121189A1

    公开(公告)日:2013-05-16

    申请号:US13672458

    申请日:2012-11-08

    CPC classification number: H04W72/082 H04B7/2656 H04L5/1484 H04W16/14 H04W72/12

    Abstract: When communications of a single radio access technology (RAT), or different radio access technologies in a proximate communication spectrum are operating at the same time, potential interference between devices may occur. To reduce the interference, the time division duplex (TDD) configuration of one or more conflicting device may be altered. For example, at the edge of a communication region, TDD configurations used by edge base stations to communicate with mobile devices may be set to reduce interference. As another example, communications of a first device may be altered so the first device schedules uplink communications when a second device also has uplink communications scheduled. Other configurations may also be implemented.

    Abstract translation: 当单个无线电接入技术(RAT)或邻近通信频谱中的不同无线电接入技术的通信同时工作时,可能发生设备之间的潜在干扰。 为了减少干扰,可以改变一个或多个冲突设备的时分双工(TDD)配置。 例如,在通信区域的边缘,可以设置边缘基站用于与移动设备通信的TDD配置,以减少干扰。 作为另一示例,可以改变第一设备的通信,使得当第二设备还具有调度的上行链路通信时,第一设备调度上行链路通信。 也可以实现其他配置。

Patent Agency Ranking