公开(公告)号：US12113017B2

公开(公告)日：2024-10-08

申请号：US17651561

申请日：2022-02-17

Applicant: QUALCOMM Incorporated

Inventor： Thomas Hua-Min Williams ,  Khaja Ahmad Shaik ,  Jeongah Park ,  Rinoj Thomas ,  Harini Siddaiah ,  Raj Kumar

IPC: H01L23/528 ,  H01L23/522 ,  H01L29/78

CPC classification number: H01L23/528 ,  H01L23/5226 ,  H01L29/785

Abstract: A die includes fins extending in a first direction, a gate formed over the fins, the gate extending in a second direction that is perpendicular to the first direction, a first source/drain contact layer formed over the fins and extending in the second direction, and a second source/drain contact layer formed over the fins and extending in the second direction, wherein the first source/drain contact layer and the second source/drain contact layer are on opposite sides of the gate. The die also includes a first source/drain metal layer electrically coupled to the first source/drain contact layer, and a second source/drain metal layer electrically coupled to the second source/drain contact layer, wherein the first source/drain metal layer and the second source/drain metal layer do not overlap one or more of the fins.