Abstract:
Systems and methods relate to power delivery networks (PDNs) for monolithic three-dimensional integrated circuits (3D-ICs). A monolithic 3D-IC includes a first die adjacent to and in contact with power/ground bumps. A second die is stacked on the first die, the second die separated from the power/ground bumps by the first die. One or more bypass power/ground vias and one or more monolithic inter-tier vias (MIVs) are configured to deliver power from the power/ground bumps to the second die.
Abstract:
A three-dimensional (3D) ultra-low power neuromorphic accelerator is described. The 3D ultra-low power neuromorphic accelerator includes a power manager as well as multiple tiers. The 3D ultra-low power neuromorphic accelerator also includes multiple cores defined on each tier and coupled to the power manager. Each core includes at least a processing element, a non-volatile memory, and a communications module.
Abstract:
Disclosed is a system for measuring temperature in an integrated circuit (IC) device. The system includes a diode-based temperature sensor comprising a first plurality of diodes coupled between a power supply pin of the IC device and a ground pin of the IC device and a second plurality of diodes coupled between the power supply pin and the ground pin, and a voltage sensing circuit configured to detect a voltage difference between the first plurality of diodes and the second plurality of diodes.
Abstract:
An n-type metal-oxide-semiconductor (NMOS) transistor comprises a graphene channel with a chemically adsorbed nitrogen dioxide (NO2) layer formed thereon. The NMOS transistor may comprise a substrate having a graphene layer formed thereon and a gate stack formed on a portion of the graphene layer disposed in a channel region that further includes a spacer region. The gate stack may comprise the chemically adsorbed NO2 layer formed on the graphene channel, a high-k dielectric formed over the adsorbed NO2 layer, a gate metal formed over the high-k dielectric, and spacer structures formed in the spacer region. The adsorbed NO2 layer formed under the gate and the spacer structures may therefore attract electrons from the graphene channel to turn the graphene-based NMOS transistor off at a gate voltage (Vg) equal to zero, making the graphene-based NMOS transistor suitable for digital logic applications.
Abstract:
A three-dimensional integrated circuit having a dual or multiple power domain is capable of less energy consumption operation under a given clock rate, which results in an enhanced power-performance-area (PPA) envelope. Sequential logic operates under a system clock that determines the system throughput, whereas combinational logic operates in a different power domain to control overall system power including dynamic and static power. The sequential logic and clock network may be implemented in one tier of the three-dimensional integrated circuit supplied with a relatively high power supply voltage, whereas the combinational logic may be implemented in another tier of the three-dimensional integrated circuit supplied with a relatively low power supply voltage. Further pipeline reorganization may be implemented to leverage the system energy consumption and performance to an optimal point.
Abstract:
An intellectual property (IP) block design methodology for three-dimensional (3D) integrated circuits may comprise folding at least one two-dimensional (2D) block that has one or more circuit components into a 3D block that has multiple tiers, wherein the one or more circuit components in the folded 2D block may be distributed among the multiple tiers in the 3D block. Furthermore, one or more pins may be duplicated across the multiple tiers in the 3D block and the one or more duplicated pins may be connected to one another using one or more intra-block through-silicon-vias (TSVs) placed inside the 3D block.
Abstract:
A microelectromechanical system (MEMS) bond release structure is provided for manufacturing of three-dimensional integrated circuit (3D IC) devices with two or more tiers. The MEMS bond release structure includes a MEMS sacrificial release layer which may have a pillar or post structure, or alternatively, a continuous sacrificial layer for bonding and release.
Abstract:
A method of designing a multi-tier three-dimensional integrated circuit (3D IC) is provided that allows the use of two-dimensional integrated circuit (2D IC) design tools. When a 2D IC design tool is used, a macro for each of the tiers indicating areas available and unavailable for placement of circuit elements in each tier is created, and the macros are superimposed on one another. Circuit elements to be implemented in the 3D IC, such as logic cells and interconnects, are shrunk and then placed and repopulated on the superimposed macro. The repopulated circuit elements on the superimposed macro are then partitioned into tiers. Monolithic inter-tier via (MIV) placement and tier-to-tier routing are designed to provide electrical connections between circuit elements in different tiers. Power, performance and area (PPA) optimization may also be performed to optimize the 3D IC layout.
Abstract:
A three-dimensional (3D) ultra-low power neuromorphic accelerator is described. The 3D ultra-low power neuromorphic accelerator includes a power manager as well as multiple tiers. The 3D ultra-low power neuromorphic accelerator also includes multiple cores defined on each tier and coupled to the power manager. Each core includes at least a processing element, a non-volatile memory, and a communications module.
Abstract:
To enable low cost pre-bond testing for a three-dimensional (3D) integrated circuit, a backbone die may have a fully connected two-dimensional (2D) clock tree and one or more non-backbone die may have multiple isolated 2D clock trees. In various embodiments, clock sinks on the backbone die and the non-backbone die can be connected using multiple through-silicon-vias and the isolated 2D clock trees in the non-backbone die can be further connected via a Detachable tree (D-tree), which may comprise a rectilinear minimum spanning tree representing a shortest interconnect among the sinks associated with the 2D clock trees in the non-backbone die. Accordingly, the backbone die and the non-backbone die can be separated and individually tested prior to bonding using one clock probe pad, and the D-tree may be easily removed from the non-backbone die subsequent to the pre-bond testing by burning fuses at the sinks associated with the 2D clock trees.