公开(公告)号：US20190086272A1

公开(公告)日：2019-03-21

申请号：US15706734

申请日：2017-09-17

Applicant: QUALCOMM Incorporated

Inventor： William XIA ,  Yang DU

IPC: G01K7/01 ,  G01K3/00 ,  G01K7/02

CPC classification number: G01K7/01 ,  G01K3/005 ,  G01K7/02

Abstract: Disclosed is a system for measuring temperature in an integrated circuit (IC) device. The system includes a diode-based temperature sensor comprising a first plurality of diodes coupled between a power supply pin of the IC device and a ground pin of the IC device and a second plurality of diodes coupled between the power supply pin and the ground pin, and a voltage sensing circuit configured to detect a voltage difference between the first plurality of diodes and the second plurality of diodes.

公开(公告)号：US20160258819A1

公开(公告)日：2016-09-08

申请号：US14639053

申请日：2015-03-04

Applicant: QUALCOMM Incorporated

Inventor： William XIA ,  Kendrick Hoy Leong YUEN

IPC: G01K7/01

CPC classification number: G01K7/015 ,  G01K7/01

Abstract: Temperature sensors using bipolar junction transistors are provided. Examples of the disclosed sensors minimize effects of IR drop and have improved accuracy. An example temperature sensor includes a first branch coupled between a power supply and ground. The first branch includes a first transistor series-coupled with a second transistor via a first node and has a first temperature sensor output via the first node. The temperature sensor also includes a second branch coupled between the power supply and ground. The second branch includes a third transistor series-coupled with a fourth transistor via a second node and has a second temperature sensor output via the second node. The first through fourth transistors are diode-connected and can have an n-well structure or a deep n-well structure. The temperature sensor also includes a voltage sensor having an input coupled to the first temperature sensor output and the second temperature sensor output.

Abstract translation: 提供使用双极结型晶体管的温度传感器。 所公开的传感器的示例使IR降低的影响最小化并且具有提高的精度。 示例性温度传感器包括耦合在电源和地之间的第一分支。 第一分支包括经由第一节点与第二晶体管串联耦合的第一晶体管，并具有通过第一节点输出的第一温度传感器。 温度传感器还包括耦合在电源和地之间的第二分支。 第二分支包括通过第二节点与第四晶体管串联耦合的第三晶体管，并且具有通过第二节点输出的第二温度传感器。 第一至第四晶体管是二极管连接的，并且可以具有n阱结构或深n阱结构。 温度传感器还包括具有耦合到第一温度传感器输出和第二温度传感器输出的输入的电压传感器。