公开(公告)号：US20180061775A1

公开(公告)日：2018-03-01

申请号：US15253782

申请日：2016-08-31

Applicant: QUALCOMM Incorporated

Inventor： Mario Velez ,  Niranjan Sunil Mudakatte ,  Changhan Yun ,  David Berdy ,  Shiqun Gu ,  Jonghae Kim ,  Chengjie Zuo

IPC: H01L23/00 ,  H01L49/02 ,  H01L23/498 ,  H01L23/31 ,  H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00

Abstract: A device that includes a single substrate layer, a plurality of interconnects over the single substrate layer, the plurality of interconnects configured to operate as at least one passive component, a first die coupled to the single substrate layer and the plurality of interconnects, and an encapsulation layer that at least partially encapsulates the first die and the plurality of interconnects configured to operate as at least one passive component. In some implementations, the single substrate layer, the first die and the encapsulation layer comprise an overall thickness of about 225 microns (μm) or less. In some implementations, the single substrate layer comprises a thickness of about 75 microns (μm) or less.

公开(公告)号：US10171112B2

公开(公告)日：2019-01-01

申请号：US15080472

申请日：2016-03-24

Applicant: QUALCOMM Incorporated

Inventor： Yunfei Ma ,  Chengjie Zuo ,  David Berdy ,  Daeik Kim ,  Changhan Yun ,  Je-Hsiung Lan ,  Mario Velez ,  Niranjan Sunil Mudakatte ,  Robert Mikulka ,  Jonghae Kim

IPC: H01P5/18 ,  H04B1/00 ,  H04B1/04 ,  H04B1/3827 ,  H04B1/40 ,  H04L5/14 ,  H03H7/09 ,  H03H7/46 ,  H01P5/02

Abstract: An RF diplexer is provided that includes a first channel and a second channel. The first channel includes a first primary inductor. Similarly, the second channel includes a second primary inductor. A first directional coupler for the first channel includes a first transformer formed by the first primary inductor and also a first secondary inductor. A first terminal for the first secondary inductor is a coupled port for the first directional coupler. A second directional coupler for the second channel includes a second transformer formed by the second primary inductor and also a second secondary inductor. A first terminal for the second secondary inductor is a coupled port for the second directional coupler.

公开(公告)号：US20170271266A1

公开(公告)日：2017-09-21

申请号：US15074750

申请日：2016-03-18

Applicant: QUALCOMM Incorporated

Inventor： Daeik Kim ,  Jie Fu ,  Changhan Yun ,  Chin-Kwan Kim ,  Manuel Aldrete ,  Chengjie Zuo ,  Mario Velez ,  Jonghae Kim

IPC: H01L23/538 ,  H01L21/48

CPC classification number: H01L23/5389 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5383 ,  H01L23/5384 ,  H01L24/19 ,  H01L24/20 ,  H01L24/25 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/2518 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2224/83 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A device and method of fabricating are provided. The device includes a substrate having a first side and an opposite second side, a cavity defined within the substrate from the first side, a die coupled to a floor of the cavity and having a conductive pad on a side of the die distal to the floor of the cavity. A laminate layer coupled to the second side of the substrate may be included. A hole may be drilled, at one time, through layers of the device, through the die, and through the conductive pad. The hole extends through and is defined within the laminate layer (if present), the second side of the substrate, the die, and the conductive pad. A conductive material is provided within the hole and extends between and through the laminate layer (if provided), the second side of the substrate, the die, and the conductive pad.

公开(公告)号：US10325855B2

公开(公告)日：2019-06-18

申请号：US15074750

申请日：2016-03-18

Applicant: QUALCOMM Incorporated

Inventor： Daeik Kim ,  Jie Fu ,  Changhan Yun ,  Chin-Kwan Kim ,  Manuel Aldrete ,  Chengjie Zuo ,  Mario Velez ,  Jonghae Kim

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00

Abstract: A device and method of fabricating are provided. The device includes a substrate having a first side and an opposite second side, a cavity defined within the substrate from the first side, a die coupled to a floor of the cavity and having a conductive pad on a side of the die distal to the floor of the cavity. A laminate layer coupled to the second side of the substrate may be included. A hole may be drilled, at one time, through layers of the device, through the die, and through the conductive pad. The hole extends through and is defined within the laminate layer (if present), the second side of the substrate, the die, and the conductive pad. A conductive material is provided within the hole and extends between and through the laminate layer (if provided), the second side of the substrate, the die, and the conductive pad.

公开(公告)号：US10038422B2

公开(公告)日：2018-07-31

申请号：US15247803

申请日：2016-08-25

Applicant: QUALCOMM Incorporated

Inventor： Changhan Hobie Yun ,  Je-Hsiung Lan ,  Chengjie Zuo ,  David Berdy ,  Jonghae Kim ,  Mario Velez ,  Niranjan Sunil Mudakatte ,  Shiqun Gu

IPC: H03H9/205 ,  H03H3/04 ,  H01L41/332 ,  H03H9/54 ,  H03H3/02

CPC classification number: H03H9/205 ,  H01L41/332 ,  H03H3/04 ,  H03H9/173 ,  H03H9/54 ,  H03H2003/021 ,  H03H2003/0435 ,  H03H2003/0442 ,  H03H2003/0471

Abstract: A single-die multi-FBAR (film bulk acoustic resonator) device includes multiple FBARs having different resonant frequencies formed over a single substrate. The FBARs include piezoelectric layers having different thicknesses but with upper electrodes formed at a same height over the substrate, lower electrodes at different heights over the substrate, and different sized air gaps separating the lower electrodes from the substrate.

公开(公告)号：US10523253B2

公开(公告)日：2019-12-31

申请号：US16029432

申请日：2018-07-06

Applicant: QUALCOMM Incorporated

Inventor： Changhan Yun ,  Chengjie Zuo ,  Mario Velez ,  Niranjan Sunil Mudakatte ,  Shiqun Gu ,  Jonghae Kim ,  David Berdy

IPC: H04B1/16 ,  H01L21/48 ,  H01L23/522 ,  H01L23/64 ,  H01L23/00 ,  H04B1/00 ,  H05K1/16 ,  H05K1/18 ,  H05K3/46 ,  H01L23/498 ,  H01L23/66 ,  H01L27/01 ,  H01L49/02 ,  H01F17/00

Abstract: In an illustrative example, an apparatus includes a passive-on-glass (POG) device integrated within a glass substrate. The apparatus further includes a semiconductor die integrated within the glass substrate.

公开(公告)号：US10044390B2

公开(公告)日：2018-08-07

申请号：US15216615

申请日：2016-07-21

Applicant: QUALCOMM Incorporated

Inventor： Changhan Yun ,  Chengjie Zuo ,  Mario Velez ,  Niranjan Sunil Mudakatte ,  Shiqun Gu ,  Jonghae Kim ,  David Berdy

IPC: H01L23/28 ,  H03H7/46 ,  H04B1/401 ,  H05K1/18 ,  H04B1/16 ,  H01L27/01 ,  H01L49/02 ,  H01L23/498 ,  H01L23/66 ,  H01L21/48

Abstract: In an illustrative example, an apparatus includes a passive-on-glass (POG) device integrated within a glass substrate. The apparatus further includes a semiconductor die integrated within the glass substrate.

公开(公告)号：US20180062617A1

公开(公告)日：2018-03-01

申请号：US15247803

申请日：2016-08-25

Applicant: QUALCOMM Incorporated

Inventor： Changhan Hobie Yun ,  Je-Hsiung Lan ,  Chengjie Zuo ,  David Berdy ,  Jonghae Kim ,  Mario Velez ,  Niranjan Sunil Mudakatte ,  Shiqun Gu

IPC: H03H9/205 ,  H01L41/332 ,  H03H9/54

CPC classification number: H03H9/205 ,  H01L41/332 ,  H03H3/04 ,  H03H9/173 ,  H03H9/54 ,  H03H2003/021 ,  H03H2003/0435 ,  H03H2003/0442 ,  H03H2003/0471

Abstract: A single-die multi-FBAR (film bulk acoustic resonator) device includes multiple FBARs having different resonant frequencies formed over a single substrate. The FBARs include piezoelectric layers having different thicknesses but with upper electrodes formed at a same height over the substrate, lower electrodes at different heights over the substrate, and different sized air gaps separating the lower electrodes from the substrate.

公开(公告)号：US20180026666A1

公开(公告)日：2018-01-25

申请号：US15216615

申请日：2016-07-21

Applicant: QUALCOMM Incorporated

Inventor： Changhan Yun ,  Chengjie Zuo ,  Mario Velez ,  Niranjan Sunil Mudakatte ,  Shiqun Gu ,  Jonghae Kim ,  David Berdy

IPC: H04B1/16 ,  H01L21/48 ,  H01L23/498 ,  H01L23/66 ,  H01L27/01 ,  H01L49/02

CPC classification number: H04B1/1638 ,  H01F17/0013 ,  H01L21/4853 ,  H01L21/486 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5223 ,  H01L23/64 ,  H01L23/66 ,  H01L24/19 ,  H01L24/20 ,  H01L27/01 ,  H01L28/10 ,  H01L28/40 ,  H01L2223/6616 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01L2223/6688 ,  H01L2224/04105 ,  H01L2224/24195 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15153 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H04B1/006 ,  H05K1/165 ,  H05K1/185 ,  H05K3/4605 ,  H05K2201/09536 ,  H05K2201/097

Abstract: In an illustrative example, an apparatus includes a passive-on-glass (POG) device integrated within a glass substrate. The apparatus further includes a semiconductor die integrated within the glass substrate.

公开(公告)号：US20180316374A1

公开(公告)日：2018-11-01

申请号：US16029432

申请日：2018-07-06

Applicant: QUALCOMM Incorporated

Inventor： Changhan Yun ,  Chengjie Zuo ,  Mario Velez ,  Niranjan Sunil Mudakatte ,  Shiqun Gu ,  Jonghae Kim ,  David Berdy

IPC: H04B1/16 ,  H01L49/02 ,  H01L23/522 ,  H01L23/00 ,  H01L27/01 ,  H01L23/498 ,  H01L23/66 ,  H01L21/48 ,  H04B1/00

CPC classification number: H04B1/1638 ,  H01F17/0013 ,  H01L21/4853 ,  H01L21/486 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5223 ,  H01L23/64 ,  H01L23/66 ,  H01L24/19 ,  H01L24/20 ,  H01L27/01 ,  H01L28/10 ,  H01L28/40 ,  H01L2223/6616 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01L2223/6688 ,  H01L2224/04105 ,  H01L2224/24195 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15153 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H04B1/006 ,  H05K1/165 ,  H05K1/185 ,  H05K3/4605 ,  H05K2201/09536 ,  H05K2201/0959 ,  H05K2201/097 ,  H05K2201/09827

Abstract: In an illustrative example, an apparatus includes a passive-on-glass (POG) device integrated within a glass substrate. The apparatus further includes a semiconductor die integrated within the glass substrate.