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公开(公告)号：US09753472B2
公开(公告)日：2017-09-05
申请号：US14827239
申请日：2015-08-14
Applicant: QUALCOMM Incorporated
Inventor： Burt Lee Price , Dhaval Rajeshbhai Shah , Jonathan Liu
Abstract: Systems and methods relate to extending life of a low-dropout (LDO) voltage regulator. A differential amplifier of the LDO voltage regulator includes switches that can be selectively turned on or off. When the LDO voltage regulator is bypassed or turned off (or not active), a first switch is turned on to selectively couple gates of a first input transistor and a second input transistor of the differential amplifier, to maintain the gates at a same voltage. The first switch is turned off to decouple the gates when the LDO voltage regulator is active. Further, a second switch can be turned on or off to selectively couple or decouple, respectively, the gate of the second input transistor to an output voltage of the LDO voltage regulator, based on whether the LDO voltage regulator is active or not active, respectively.
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2.发明申请公开(公告)号：US20160225436A1
公开(公告)日：2016-08-04
申请号：US14611056
申请日：2015-01-30
Applicant: QUALCOMM Incorporated
Inventor： Zhongze Wang , Niladri Narayan Mojumder , Jonathan Liu , Choh Fei Yeap
IPC: G11C11/417 , G06F11/07
CPC classification number: G11C11/417 , G06F11/073 , G06F11/076 , G06F11/0793 , G11C5/14 , G11C5/147 , G11C7/1045 , G11C7/22 , G11C29/021 , G11C29/028 , G11C2207/2254
Abstract: A method of operation of a memory device includes, for each operating frequency of multiple operating frequencies, determining a target voltage level of a supply voltage. For example, a first target voltage level for a first operating frequency of the multiple operating frequencies is determined. The method includes accessing first data from the memory device while the memory device is operating at the first operating frequency and is powered by the supply voltage having a first voltage level. The method includes determining a first number of errors associated with the first data. The method further includes, in response to the first number of errors satisfying a threshold, adjusting the supply voltage to a second voltage level that is greater than the first voltage level.
Abstract translation: 对于多个工作频率的每个工作频率，存储器件的操作方法包括确定电源电压的目标电压电平。 例如，确定用于多个工作频率的第一工作频率的第一目标电压电平。 该方法包括当存储器件在第一工作频率下操作并由具有第一电压电平的电源供电时从存储器件存取第一数据。 该方法包括确定与第一数据相关联的第一数量的错误。 该方法还包括响应于满足阈值的第一数量的误差，将电源电压调整到大于第一电压电平的第二电压电平。
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公开(公告)号：US20150277393A1
公开(公告)日：2015-10-01
申请号：US14507679
申请日：2014-10-06
Applicant: QUALCOMM Incorporated
Inventor： Jonathan Liu , Jasmin Smaila Ibrahimovic , Jan Christian Diffenderfer , Carlos Auyon
Abstract: An integrated circuit dynamically compensates for circuit aging by measuring the aging with an aging sensor. The aging sensor uses the same circuit to measure circuit speeds in both aged and un-aged conditions. An example aging sensor includes two delay lines. The delay lines are controlled to be in a static aging state or the delay lines are coupled to form a ring oscillator that can operate in an aged state where the frequency is slowed by aging or in an un-aged state where the frequency is not slowed by aging. The integrated circuit uses the aging measurements for dynamic voltage and frequency scaling. The dynamic voltage and frequency scaling uses a table of operating frequencies and corresponding voltage that is periodically updated based on the aging measurements. The integrated circuit use information about the relationship between the aging measurements and circuit performance to update the table.
Abstract translation: 集成电路通过老化传感器测量老化来动态地补偿电路老化。 老化传感器使用相同的电路来测量老化和非老化条件下的电路速度。 示例性老化传感器包括两个延迟线。 延迟线被控制为处于静态老化状态，或者延迟线被耦合以形成环形振荡器，该环形振荡器可以在衰老状态下工作，其中频率由于老化而衰减，或者在频率不变慢的未老化状态 通过老化 集成电路使用老化测量动态电压和频率缩放。 动态电压和频率缩放使用基于老化测量周期更新的工作频率表和相应的电压表。 集成电路使用有关老化测量和电路性能之间关系的信息来更新表。
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公开(公告)号：US09786356B2
公开(公告)日：2017-10-10
申请号：US14611056
申请日：2015-01-30
Applicant: QUALCOMM Incorporated
Inventor： Zhongze Wang , Niladri Narayan Mojumder , Jonathan Liu , Choh Fei Yeap
CPC classification number: G11C11/417 , G06F11/073 , G06F11/076 , G06F11/0793 , G11C5/14 , G11C5/147 , G11C7/1045 , G11C7/22 , G11C29/021 , G11C29/028 , G11C2207/2254
Abstract: A method of operation of a memory device includes, for each operating frequency of multiple operating frequencies, determining a target voltage level of a supply voltage. For example, a first target voltage level for a first operating frequency of the multiple operating frequencies is determined. The method includes accessing first data from the memory device while the memory device is operating at the first operating frequency and is powered by the supply voltage having a first voltage level. The method includes determining a first number of errors associated with the first data. The method further includes, in response to the first number of errors satisfying a threshold, adjusting the supply voltage to a second voltage level that is greater than the first voltage level.
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