公开(公告)号：US09985591B2

公开(公告)日：2018-05-29

申请号：US15421282

申请日：2017-01-31

申请人： QUALCOMM Incorporated

发明人： Jeremy Goldblatt ,  Darryl Jessie

IPC分类号： H03F1/56 ,  H03F3/193 ,  H03F3/21

CPC分类号： H03F1/56 ,  H03F1/223 ,  H03F3/193 ,  H03F3/245 ,  H03F3/505 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/534 ,  H03F2200/69

摘要： A power amplification device includes a power amplifier core stage and a power amplifier driver stage. The power amplifier driver stage receives a radio frequency signal to be amplified by the power amplification device. The power amplifier driver stage includes a first source follower input transistor and a first current source transistor. A source of the first source follower input transistor is coupled to a drain of the first current source transistor. The source of the first source follower input transistor is directly coupled to the power amplifier core stage to drive the power amplifier core stage. An input match and passive voltage gain device is coupled to the power amplifier driver stage to generate a voltage gain at an input of the power amplifier driver stage. A first bias source is configured to generate a first bias signal to bias the power amplifier driver stage.

公开(公告)号：US09537197B2

公开(公告)日：2017-01-03

申请号：US14559503

申请日：2014-12-03

申请人： QUALCOMM Incorporated

发明人： Darryl Jessie ,  Lan Nan

IPC分类号： H01P3/00 ,  H01L23/00 ,  H01L23/66 ,  H01L21/768 ,  H01L23/528

CPC分类号： H01P3/006 ,  H01L21/768 ,  H01L23/5225 ,  H01L23/525 ,  H01L23/528 ,  H01L23/66 ,  H01L24/11 ,  H01L24/14 ,  H01L2223/6605 ,  H01L2223/6627 ,  H01P3/003 ,  H05K1/0219 ,  H05K2201/0305 ,  H05K2201/09236 ,  H05K2201/09336 ,  H05K2201/09618

摘要： In an integrated circuit package that houses radio-frequency (RF) circuits or components using wafer-level packaging (WLP), an RF-signal transmission structure includes a signal-carrying conductive line positioned between grounded conductive lines to avoid undesirable coupling between the signal-carrying conductive line and other RF circuits or components in the same package.

摘要翻译： 在使用晶片级封装（WLP）容纳射频（RF）电路或部件的集成电路封装中，RF信号传输结构包括位于接地导线之间的信号承载导线，以避免信号之间的不期望的耦合 - 同一封装中的导线和其他RF电路或组件。

公开(公告)号：US11245175B2

公开(公告)日：2022-02-08

申请号：US16145100

申请日：2018-09-27

申请人： QUALCOMM Incorporated

发明人： Seong Heon Jeong ,  Rajneesh Kumar ,  Mohammad Ali Tassoudji ,  Darryl Jessie ,  Gurkanwal Sahota ,  Kevin Hsi Huai Wang ,  Jeong Il Kim ,  Taesik Yang ,  Thomas Myers ,  Neil Burns ,  Julio Zegarra ,  Clinton James Wilber ,  Jordan Szabo

IPC分类号： H01Q1/24 ,  H01Q1/22 ,  H01L25/065 ,  H01L23/28 ,  H01L23/552 ,  H01L23/64 ,  H01L23/66 ,  H01Q1/52 ,  H01Q9/06 ,  H01Q9/26 ,  H01Q21/28 ,  H01L23/31 ,  H01Q9/04

摘要： An antenna module is described. The antenna module include a ground plane in a multilayer substrate. The antenna module also includes a mold on the multilayer substrate. The antenna module further includes a conductive wall separating a first portion of the mold from a second portion of the mold. The conductive wall is electrically coupled to the ground plane. A conformal shield may be placed on a surface of the second portion of the mold. The conformal shield is electrically coupled to the ground plane.