公开(公告)号：US10312193B2

公开(公告)日：2019-06-04

申请号：US15235790

申请日：2016-08-12

Applicant: QUALCOMM Incorporated

Inventor： Shiqun Gu ,  Chengjie Zuo ,  Steve Fanelli ,  Husnu Ahmet Masaracioglu

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/538 ,  H01L21/56 ,  H01L21/768 ,  H01L23/31 ,  H01L23/66 ,  H01L25/07 ,  H01L25/00 ,  H03H1/00 ,  H01L21/48 ,  H01L23/00 ,  H01L23/498

Abstract: A package includes a redistribution portion, a first portion, and a second portion. The first portion is coupled to the redistribution portion. The first portion includes a first switch comprising a plurality of switch interconnects, and a first encapsulation layer that at least partially encapsulates the first switch. The second portion is coupled to the first portion. The second portion includes a first plurality of filters. Each filter includes a plurality of filter interconnects. The second portion also includes a second encapsulation layer that at least partially encapsulates the first plurality of filters. The first portion includes a second switch positioned next to the first switch, where the first encapsulation layer at least partially encapsulates the second switch. The second portion includes a second plurality of filters positioned next to the first plurality of filters, where the secod encapsulation layer at least partially encapsulates the second plurality of filters.

公开(公告)号：US20180047673A1

公开(公告)日：2018-02-15

申请号：US15235790

申请日：2016-08-12

Applicant: QUALCOMM Incorporated

Inventor： Shiqun Gu ,  Chengjie Zuo ,  Steve Fanelli ,  Husnu Ahmet Masaracioglu

IPC: H01L23/538 ,  H01L23/31 ,  H01L25/07 ,  H01L25/00 ,  H01L23/48 ,  H01L21/768 ,  H01L21/56 ,  H03H1/00 ,  H01L23/66

CPC classification number: H01L23/5386 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/56 ,  H01L21/568 ,  H01L21/768 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L23/66 ,  H01L24/19 ,  H01L24/24 ,  H01L24/97 ,  H01L25/072 ,  H01L25/50 ,  H01L2223/6661 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/24137 ,  H01L2224/24147 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/19101 ,  H01L2924/30111 ,  H03H1/0007 ,  H03H2001/0021 ,  H01L2224/83005

Abstract: A package includes a redistribution portion, a first portion, and a second portion. The first portion is coupled to the redistribution portion. The first portion includes a first switch comprising a plurality of switch interconnects, and a first encapsulation layer that at least partially encapsulates the first switch. The second portion is coupled to the first portion. The second portion includes a first plurality of filters. Each filter includes a plurality of filter interconnects. The second portion also includes a second encapsulation layer that at least partially encapsulates the first plurality of filters. The first portion includes a second switch positioned next to the first switch, where the first encapsulation layer at least partially encapsulates the second switch. The second portion includes a second plurality of filters positioned next to the first plurality of filters, where the second encapsulation layer at least partially encapsulates the second plurality of filters.

公开(公告)号：US09847293B1

公开(公告)日：2017-12-19

申请号：US15240952

申请日：2016-08-18

Applicant: QUALCOMM Incorporated

Inventor： Sinan Goktepeli ,  Plamen Vassilev Kolev ,  Michael Andrew Stuber ,  Richard Hammond ,  Shiqun Gu ,  Steve Fanelli

IPC: H01L21/48 ,  H01L23/528 ,  H01L27/12 ,  H01L29/06 ,  H01L23/522 ,  H01L23/66 ,  H01L23/532 ,  H01L49/02 ,  H04B1/16

CPC classification number: H01L23/5283 ,  H01L23/5223 ,  H01L23/53209 ,  H01L23/66 ,  H01L27/1203 ,  H01L28/40 ,  H01L29/0649 ,  H01L29/66181 ,  H01L29/94 ,  H01L2223/6677 ,  H04B1/16

Abstract: An integrated circuit structure may include a capacitor having a semiconductor layer as a first plate and a gate layer as a second plate. A capacitor dielectric layer may separate the first plate and the second plate. A backside metallization may be coupled to the first plate of the capacitor. A front-side metallization may be coupled to the second plate of the capacitor. The front-side metallization may be arranged distal from the backside metallization.

公开(公告)号：US10290579B2

公开(公告)日：2019-05-14

申请号：US15807169

申请日：2017-11-08

Applicant: QUALCOMM Incorporated

Inventor： Sinan Goktepeli ,  Plamen Vassilev Kolev ,  Michael Andrew Stuber ,  Richard Hammond ,  Shiqun Gu ,  Steve Fanelli

IPC: H01L21/48 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L23/66 ,  H01L27/12 ,  H01L49/02 ,  H01L29/06 ,  H04B1/16 ,  H01L29/66 ,  H01L29/94

Abstract: An integrated circuit structure may include a capacitor having a semiconductor layer as a first plate and a gate layer as a second plate. A capacitor dielectric layer may separate the first plate and the second plate. A backside metallization may be coupled to the first plate of the capacitor. A front-side metallization may be coupled to the second plate of the capacitor. The front-side metallization may be arranged distal from the backside metallization.

公开(公告)号：US10256863B2

公开(公告)日：2019-04-09

申请号：US15151285

申请日：2016-05-10

Applicant: QUALCOMM INCORPORATED

Inventor： Shiqun Gu ,  Chengjie Zuo ,  Steve Fanelli ,  Thomas Gee ,  Young Kyu Song

IPC: H04B1/48 ,  H01L21/84 ,  H01L23/48 ,  H01L23/60 ,  H01L23/66 ,  H01L27/12 ,  H01L29/06 ,  H01L49/02 ,  H01L21/762 ,  H01L21/768 ,  H01L23/522

Abstract: An integrated radio frequency (RF) circuit structure may include a resistive substrate material and a switch. The switch may be arranged in a silicon on insulator (SOI) layer supported by the resistive substrate material. The integrated RF circuit structure may also include an isolation layer coupled to the SOI layer. The integrated RF circuit structure may further include a filter, composed of inductors and capacitors. The filter may be arranged on a surface of the integrated RF circuit structure, opposite the resistive substrate material. In addition, the switch may be arranged on a first surface of the isolation layer.

公开(公告)号：US20180069079A1

公开(公告)日：2018-03-08

申请号：US15255744

申请日：2016-09-02

Applicant: QUALCOMM Incorporated

Inventor： Steve Fanelli ,  Richard Hammond

IPC: H01L29/10 ,  H01L27/12 ,  H01L21/8234 ,  H01L21/84 ,  H01L23/66

CPC classification number: H01L23/66 ,  H01L21/823493 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/32 ,  H01L29/408

Abstract: In a particular aspect, a device includes a substrate including a first trap rich layer region and a second trap rich layer region. The first trap rich layer region is separated from the second trap rich layer region by a portion of the substrate. The device further includes a semiconductor device layer including one or more components.

公开(公告)号：US09812580B1

公开(公告)日：2017-11-07

申请号：US15257823

申请日：2016-09-06

Applicant: QUALCOMM Incorporated

Inventor： Sinan Goktepeli ,  Steve Fanelli

IPC: H01L27/108 ,  H01L29/786 ,  H01L29/06 ,  H01L23/522 ,  H01L23/66 ,  H01L21/762 ,  H01Q1/38 ,  H01Q1/24

CPC classification number: H01L29/78615 ,  H01L21/76251 ,  H01L23/481 ,  H01L23/5223 ,  H01L23/66 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7851 ,  H01L2223/6616 ,  H01L2223/6677 ,  H01Q1/241 ,  H01Q1/38

Abstract: An integrated circuit may include a gate, having gate fingers. The integrated circuit may also include a body, having semiconductor pillars interlocking with the gate fingers of the gate. The integrated circuit may also include a backside contact(s) coupled to the body. The integrated circuit may further include a backside metallization. The backside metallization may be coupled to the body through the backside contact(s).