Abstract:
A semiconductor package including a semiconductor chip, a conductive element disposed aside the semiconductor chip, a conductive via disposed on and electrically connected to the conductive element, an insulating encapsulation, and a first circuit structure disposed on the semiconductor chip and the conductive via is provided. A height of the conductive element is less than a height of the semiconductor chip. The insulating encapsulation encapsulates the semiconductor chip, the conductive element, and the conductive via. The conductive via is located between the first circuit structure and the conductive element, and the semiconductor chip is electrically coupled to the conductive via through the first circuit structure.
Abstract:
A package structure includes a chip, a substrate, wires and a molding compound. The chip includes an active surface, a back surface and bonding pads disposed on the active surface. The substrate includes first and second solder masks, first and second patterned circuit layers and a core layer having a first surface and a second surface. The first patterned circuit layer is disposed on the first solder mask. The core layer disposed on the first solder mask with the first surface partially exposes the first patterned circuit layer. The substrate disposed on the active surface with the first solder mask exposes the bonding pads. The second patterned circuit layer disposed on the second surface. The second solder mask partially covers the second patterned circuit layer. The wires are connected between the first patterned circuit layer and the bonding pads. The molding compound covers the chip, the wire and the substrate.
Abstract:
A semiconductor package including a semiconductor chip, a conductive element disposed adjacent to the semiconductor chip, an insulating encapsulation covering the semiconductor chip and the conductive element, a redistribution structure disposed on the semiconductor chip and the conductive element, and a first buffer layer disposed between the redistribution structure and the insulating encapsulation is provided. The semiconductor chip is electrically coupled to the conductive element through the redistribution structure. The first buffer layer covers the semiconductor chip and the conductive element. A manufacturing method of a semiconductor package is also provided.
Abstract:
A package structure includes a redistribution structure, a bridge die, a plurality of conductive pillars, at least two dies, and an insulating encapsulant. The bridge die provides an electrical connection between the at least two dies. The conductive pillars provide an electrical connection between the at least two dies and the redistribution structure. The insulating encapsulant is disposed on the redistribution structure, encapsulates the bridge die and the conductive pillars, and covers each of the at least two dies. The bridge die of the package structure may be used to route signals between the at least two dies, allowing for a higher density of interconnecting routes between the at least two dies.
Abstract:
A semiconductor package including a stacked-die structure, a second encapsulant laterally encapsulating the stacked-die structure and a redistribution layer disposed on the second encapsulant and the staked-die structure is provided. The stacked-die structure includes a first semiconductor die including a first active surface, a circuit layer disposed on the first active surface, a second semiconductor die including a second active surface facing towards the first active surface, a plurality of conductive features distributed at the circuit layer and electrically connected to the first and second semiconductor die and a first encapsulant encapsulating the second semiconductor die and the conductive features. A portion of the conductive features surrounds the second semiconductor die. The redistribution layer is electrically connected to the staked-die structure. A manufacturing method of a semiconductor package is also provided.
Abstract:
A first semiconductor package of a POP structure has a first body and a plurality of first solder balls. A second semiconductor package of the POP structure has a second body and a plurality of second solder balls. A stand-off mechanism is utilized to maintain a minimum gap between the first body and the second body while a reflow soldering process is performed. By performing the reflow soldering process, the first solder balls and the second solder balls are heated and engaging with one another so as to solder the first solder balls and the second solder balls to form a plurality of interposer solder balls. Each interposer solder ball has a height substantially equal to the minimum gap and a cross sectional width less than a pitch between two adjacent interposer solder balls. Thereby, the POP structure would be a fine pitch package.
Abstract:
A package includes a chip, a wire, a mold layer and a redistribution layer. The chip includes a conductive pad. The wire is bonded to the conductive pad of the chip. The mold layer surrounds the first chip and the wire. The redistribution layer is disposed on the mold layer and contacts an exposed portion of the wire.
Abstract:
A semiconductor package including a semiconductor chip, a conductive element disposed aside the semiconductor chip, a conductive via disposed on and electrically connected to the conductive element, an insulating encapsulation, and a first circuit structure disposed on the semiconductor chip and the conductive via is provided. A height of the conductive element is less than a height of the semiconductor chip. The insulating encapsulation encapsulates the semiconductor chip, the conductive element, and the conductive via. The conductive via is located between the first circuit structure and the conductive element, and the semiconductor chip is electrically coupled to the conductive via through the first circuit structure.
Abstract:
A package structure includes a chip, a substrate, wires and a molding compound. The chip includes an active surface, a back surface opposite to the active surface and bonding pads disposed on the active surface. The substrate includes a first solder mask, a first patterned circuit layer and a core layer having a first surface and a second surface opposite to the first surface. The first patterned circuit layer is disposed on the first surface. The first solder mask disposed on the first surface partially exposes the first patterned circuit layer. The substrate disposed on the active surface with the second surface exposes the bonding pads. The wires are connected between the first patterned circuit layer and the bonding pads. The molding compound covers the chip, the wire and the substrate. A top surface of the molding compound is coplanar with a top surface of the first solder mask.
Abstract:
Disclosed is a semiconductor package utilizing a tape to reinforce fixing of leads to a die pad having a through hole. The package primarily comprises a leadframe having the plurality of leads and the die pad, a tape, at least a chip, and an encapsulant. The die pad. The tape is attached beneath the leadframe adjacent to the inner fingers of the leads to fix the leads and the die pad for wire-bonding. Additionally, the tape does not completely cover the through hole. The chip is disposed on the leads and the die pad and electrically connected to the inner fingers. The encapsulant encapsulates the die pad, the tape and the chip with the leads being insulatedly bonded where the encapsulant further completely fills into the through hole through its opening without completely covered by the tape.