Abstract:
The present invention relates to a manufacturing method of a molded article, including: a molded article forming step of forming a molded article by curing a resin composition on a main surface, on the side of a bendable first supporting medium, of a laminated supporting medium obtained by laminating the first supporting medium and a second supporting medium that is harder than the first supporting medium; a second-supporting medium peeling step of peeling the second supporting medium from the first supporting medium after the molded article forming step; and a first-supporting medium peeling step of peeling the first supporting medium from the molded article while bending the first supporting medium after the second-supporting medium peeling step. The shape of the first supporting medium can be maintained at a curing temperature at which the resin composition is cured in the molded article forming step.
Abstract:
One aspect of the present invention resides in a manufacturing method for a semiconductor package, including a covering step of forming a covering insulating layer that covers the surface of a semiconductor element, a film-forming step of forming a resin film on the surface of the covering insulating layer, a circuit pattern-forming step of forming a circuit pattern portion including recesses reaching the surfaces of electrodes of the semiconductor element and a circuit groove having a desired shape and a desired depth, a catalyst-depositing step of depositing a plating catalyst or a precursor thereof on the surface of the circuit pattern portion, a film-separating step of separating the resin film from the covering insulating layer, and a plating processing step of forming a circuit electrically connected to the electrodes, by applying electroless plating to the covering insulating layer, from which the resin film is separated.
Abstract:
One aspect of the present invention resides in a manufacturing method for a semiconductor package, including a covering step of forming a covering insulating layer that covers the surface of a semiconductor element, a film-forming step of forming a resin film on the surface of the covering insulating layer, a circuit pattern-forming step of forming a circuit pattern portion including recesses reaching the surfaces of electrodes of the semiconductor element and a circuit groove having a desired shape and a desired depth, a catalyst-depositing step of depositing a plating catalyst or a precursor thereof on the surface of the circuit pattern portion, a film-separating step of separating the resin film from the covering insulating layer, and a plating processing step of forming a circuit electrically connected to the electrodes, by applying electroless plating to the covering insulating layer, from which the resin film is separated.
Abstract:
An object is to provide a resin composition that has excellent dielectric properties, that yields a highly heat-resistant cured product, that provides a low viscosity when made into a varnish, and that has a high Tg and a high flame retardancy without containing halogen. The resin composition contains a polyarylene ether copolymer (A) that has an intrinsic viscosity, measured in methylene chloride at 25° C., of 0.03 to 0.12 dL/g and that has an average of 1.5 to 3 phenolic hydroxyl groups in molecular terminal position per molecule, a triphenylmethane-type epoxy resin (B) that has a softening point of 50 to 70° C., and a cure accelerator (C), wherein the content of the polyarylene ether copolymer (A) is 60 to 85 mass parts where the total of the polyarylene ether copolymer (A) and the epoxy resin (B) is 100 mass parts.