公开(公告)号：US20130153368A1

公开(公告)日：2013-06-20

申请号：US13820263

申请日：2011-08-31

Applicant: Osamu Tsuge ,  Tomoki Uemura

Inventor： Osamu Tsuge ,  Tomoki Uemura

IPC: B65G27/00

CPC classification number: B65G27/00 ,  C21B13/0053 ,  C21B13/10 ,  F27B9/16 ,  F27B9/38 ,  F27D2003/0004

Abstract: Not only the cracking of granular reduced iron materials is reduced, but also reduced iron materials are fed uniformly onto a furnace floor regardless of a width of the furnace floor. A feeding system for reduced iron material includes a plurality of material feeding equipments 4 provided in a furnace width direction of a mobile furnace floor type reduction melting furnace, wherein each of the material feeding equipments 4 is constructed by a hopper 10 configured to receive reduced iron materials and discharge the materials from a discharge port 10a, a trough 14 configured to connect the discharge port 10a and a material charging portion of the mobile furnace floor type reduction melting furnace configured to receive the reduced iron materials discharged from the discharge port 10a, an exit portion provided on an exit side of the trough 14, and a vibration applying unit configured to cause the trough to vibrate along a furnace floor moving direction.

Abstract translation: 不仅减少了粒状还原铁材料的破裂，而且还减少了铁材料均匀地进料到炉底，而不管炉底的宽度如何。 用于还原铁材料的进料系统包括设置在移动式炉底式还原熔炉的炉宽方向上的多个供料设备4，其中每个供料设备4由构造成容纳还原铁的料斗10构成 材料并从排出口10a排出材料，将构造成连接排出口10a的槽14和构造成容纳从排出口10a排出的还原铁物质的移动式炉底型减速熔炉的材料充填部， 设置在槽14的出口侧的出口部，以及构造成使槽沿着炉底移动方向振动的振动施加单元。

公开(公告)号：US08915352B2

公开(公告)日：2014-12-23

申请号：US13820263

申请日：2011-08-31

Applicant: Osamu Tsuge ,  Tomoki Uemura

Inventor： Osamu Tsuge ,  Tomoki Uemura

IPC: B65G27/00 ,  C21B13/00 ,  C21B13/10 ,  F27B9/16 ,  F27B9/38 ,  F27D3/00

CPC classification number: B65G27/00 ,  C21B13/0053 ,  C21B13/10 ,  F27B9/16 ,  F27B9/38 ,  F27D2003/0004

Abstract: Not only the cracking of granular reduced iron materials is reduced, but also reduced iron materials are fed uniformly onto a furnace floor regardless of a width of the furnace floor. A feeding system for reduced iron material includes a plurality of material feeding equipments 4 provided in a furnace width direction of a mobile furnace floor type reduction melting furnace, wherein each of the material feeding equipments 4 is constructed by a hopper 10 configured to receive reduced iron materials and discharge the materials from a discharge port 10a, a trough 14 configured to connect the discharge port 10a and a material charging portion of the mobile furnace floor type reduction melting furnace configured to receive the reduced iron materials discharged from the discharge port 10a, an exit portion provided on an exit side of the trough 14, and a vibration applying unit configured to cause the trough to vibrate along a furnace floor moving direction.

Abstract translation: 不仅减少了粒状还原铁材料的破裂，而且还减少了铁材料均匀地进料到炉底，而不管炉底的宽度如何。 用于还原铁材料的进料系统包括设置在移动式炉底式还原熔炉的炉宽方向上的多个供料设备4，其中每个供料设备4由构造成容纳还原铁的料斗10构成 材料并从排出口10a排出材料，将构造成连接排出口10a的槽14和构造成容纳从排出口10a排出的还原铁物质的移动式炉底型减速熔炉的材料充填部， 设置在槽14的出口侧的出口部，以及构造成使槽沿着炉底移动方向振动的振动施加单元。

公开(公告)号：US08845992B2

公开(公告)日：2014-09-30

申请号：US12864874

申请日：2008-12-24

Applicant: Takuji Okahisa ,  Seiji Nakahata ,  Tomoki Uemura

Inventor： Takuji Okahisa ,  Seiji Nakahata ,  Tomoki Uemura

IPC: C01B21/06 ,  C01C1/02 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B29/40 ,  C30B33/12 ,  C30B25/02

CPC classification number: C30B29/403 ,  C30B25/02 ,  C30B29/406 ,  C30B33/12

Abstract: Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking.

Abstract translation: 提供利用晶锭制造的III族氮化物单晶锭和III族氮化物单晶衬底，以及III族氮化物单晶锭的制造方法和III族氮化物单晶衬底的制造方法， 在长度延长生长期间的裂纹减少。 其特征在于包括蚀刻基底衬底的边缘表面的步骤，以及在其基底上外延生长六面体系III族氮化物单晶的步骤，在其侧表面上具有晶面。 为了减少晶锭的长度延长生长期间的裂纹发生，必须控制将多晶和面外取向的晶体沉积到单晶的周围。 如已经机械地改变的刚刚描述的基底边缘表面的层通过蚀刻预先去除，由此在形成在基底基板上的III族氮化物单晶锭的侧表面上形成结晶平面， 因此控制多晶体和面外取向晶体的沉积并减少裂纹发生。

公开(公告)号：US07432186B2

公开(公告)日：2008-10-07

申请号：US11425394

申请日：2006-06-21

Applicant: Takayuki Nishiura ,  Tomoki Uemura

Inventor： Takayuki Nishiura ,  Tomoki Uemura

IPC: H01L21/3205

CPC classification number: H01L21/02052 ,  Y10S438/906

Abstract: Affords methods of surface treating a substrate and of manufacturing Group III-V compound semiconductors, in which a substrate made of a Group III-V semiconductor compound is rendered stoichiometric, and microscopic roughness on the surface following epitaxial growth is reduced. The methods include preparing a substrate made of a Group III-V semiconductor compound (S10), and cleaning the substrate with a cleaning solution whose pH has been adjusted to an acidity of 2 to 6.3 inclusive, and to which an oxidizing agent has been added (S20).

Abstract translation: 提供表面处理基板和制造III-V族化合物半导体的方法，其中由III-V族半导体化合物制成的基板被化学计量，并且在外延生长之后的表面上的微观粗糙度降低。 所述方法包括制备由III-V族半导体化合物（S10）制成的衬底，并用pH调节至2〜6.3的含量的清洁溶液清洗该衬底，并将氧化剂 添加（S 20）。

公开(公告)号：US5959389A

公开(公告)日：1999-09-28

申请号：US964469

申请日：1997-11-04

Applicant: Hideaki Nakahata ,  Tomoki Uemura ,  Kenjiro Higaki ,  Satoshi Fujii ,  Hiroyuki Kitabayashi ,  Shin-ichi Shikata

Inventor： Hideaki Nakahata ,  Tomoki Uemura ,  Kenjiro Higaki ,  Satoshi Fujii ,  Hiroyuki Kitabayashi ,  Shin-ichi Shikata

IPC: H03H9/02 ,  H03H9/10 ,  H03H9/145

CPC classification number: H03H9/02582

Abstract: A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and wherein a parameter kh1=2.pi.(t.sub.Z /.lambda.) and a parameter kh2=2.pi.(t.sub.S /.lambda.) are given within a region ABCDEFGHIJKLA in a two-dimensional Cartesin coordinate graph of FIG. 1.

Abstract translation: 根据本发明的波长λ（μm）的第二模式表面声波的第一表面声波装置是图1所示的“A型”装置的SAW装置。 其中参数kh3 =2π（tA /λ）为：0.033≤kh3

公开(公告)号：US20090194848A1

公开(公告)日：2009-08-06

申请号：US12298332

申请日：2007-04-24

Applicant: Tomoki Uemura ,  Takashi Sakurada ,  shinsuke Fujiwara ,  Takuji Okahisa ,  Koji Uematsu ,  Hideaki Nakahata

Inventor： Tomoki Uemura ,  Takashi Sakurada ,  shinsuke Fujiwara ,  Takuji Okahisa ,  Koji Uematsu ,  Hideaki Nakahata

IPC: H01L29/20 ,  H01L21/20

CPC classification number: H01L21/02623 ,  C30B25/186 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

Abstract: There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.

Abstract translation: 提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法， 晶种基片。 在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或 反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。 这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

公开(公告)号：US20080292877A1

公开(公告)日：2008-11-27

申请号：US10569727

申请日：2005-04-25

Applicant: Yusuke Horie ,  Takayuki Nishiura ,  Tomoki Uemura

Inventor： Yusuke Horie ,  Takayuki Nishiura ,  Tomoki Uemura

IPC: B32B5/16 ,  C09K13/00 ,  B08B3/08 ,  H01L21/20 ,  H01L21/302 ,  C22C28/00

CPC classification number: H01L21/02052 ,  Y10T428/265

Abstract: The present invention provides a method of cleaning a GaAs substrate with less precipitate particles after cleaning. This cleaning method comprises an acid cleaning step (S11), a deionized water rinsing step (S12), and a rotary drying step (S13). First, a GaAs substrate with a mirror finished surface is immersed in an acid cleaning solution in the acid cleaning step (S11). In the acid cleaning step, the cleaning time is less than 30 seconds. Next, the deionized water rinsing step performs the cleaned GaAs substrate with deionized water (S12) to wash away the cleaning solution deposited thereon. Subsequently, the rotary drying step dries the GaAs substrate deposited on deionized water (S13). This provides the cleaned GaAs substrate with less precipitate particles.

Abstract translation: 本发明提供一种在清洗后用较少析出物颗粒清洗GaAs衬底的方法。 该清洗方法包括酸洗步骤（S11），去离子水漂洗步骤（S12）和旋转干燥步骤（S13）。 首先，在酸洗工序中将具有镜面的表面的GaAs衬底浸渍在酸洗液中（S11）。 在酸洗步骤中，清洗时间少于30秒。 接下来，去离子水漂洗步骤用去离子水进行清洗的GaAs衬底（S12），以清洗其上沉积的清洗溶液。 随后，旋转干燥步骤干燥沉积在去离子水上的GaAs衬底（S13）。 这为清洁的GaAs衬底提供了较少的沉淀颗粒。

公开(公告)号：US07387989B2

公开(公告)日：2008-06-17

申请号：US11148239

申请日：2005-06-09

Applicant: Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

Inventor： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

IPC: H01L21/302

CPC classification number: C30B33/00 ,  Y10T428/21

Abstract: An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.

Abstract translation: 在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中，当Al x N 2的直径为至多20个数量时， 在1-xy N衬底中的Ga 2 y是两英寸，并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。 此外，在Al-N-N基底中，在Al 2 O 3的表面的光电子光谱中， 通过X射线光电子能谱检测角度为10°，在1-xy N衬底中，峰面积C < SUB> 1s电子和N 1s电子的峰面积（C 1s电子峰面积/ N 1s电子峰面积） 至多为3，并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。 此外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al 2基板的峰面积 电子和N 1s电子的峰面积（Al 2 S 3电子峰面积/ N 1s电子峰面积）为0.65以下，清洗 提供了可以获得AlN衬底的方法。

公开(公告)号：US06661152B2

公开(公告)日：2003-12-09

申请号：US10264264

申请日：2002-10-04

Applicant: Keiji Ishibashi ,  Takahiro Imai ,  Tomoki Uemura ,  Daichi Kawaguchi ,  Hideaki Nakahata ,  Satoshi Fujii

Inventor： Keiji Ishibashi ,  Takahiro Imai ,  Tomoki Uemura ,  Daichi Kawaguchi ,  Hideaki Nakahata ,  Satoshi Fujii

IPC: H03H925

CPC classification number: H03H9/02582

Abstract: A diamond film is deposited in the thickness of 20 &mgr;m on a silicon wafer 0.8 mm thick by filament CVD. Here the hydrogen content of the diamond film is adjusted in the range of not less than 1% nor more than 5% in atomic percent. By mechanical polishing with a grinding wheel including diamond abrasives, the diamond film is smoothed so that the arithmetic mean roughness (Ra) of the surface thereof becomes not more than 20 nm.

Abstract translation: 通过灯丝CVD在0.8mm厚的硅晶片上沉积厚度为20μm的金刚石膜。 这里，将金刚石膜的氢含量调整为原子百分比为1％以上5％以下的范围。 通过用包括金刚石磨料的砂轮进行机械抛光，使金刚石膜平滑，使得其表面的算术平均粗糙度（Ra）不超过20nm。

公开(公告)号：US20110132410A1

公开(公告)日：2011-06-09

申请号：US12376573

申请日：2007-06-15

Applicant: Tomoki Uemura ,  Hideaki Nakahata

Inventor： Tomoki Uemura ,  Hideaki Nakahata

IPC: B08B3/12 ,  B32B5/16 ,  C11D7/32

CPC classification number: C30B29/403 ,  B08B3/12 ,  C30B33/00 ,  C30B33/10 ,  H01L21/02052 ,  Y10T428/25

Abstract: Affords GaxIn1-xN substrates onto which high-quality epitaxial films can be stably grown, and cleaning methods for manufacturing the GaxIn1-xN substrates. GaxIn1-xN substrate in which the number of particles of not less than 0.2 μm particle size present on the GaxIn1-xN substrate surface is 20 or fewer, given that the GaxIn1-xN substrate diameter is 2 inches. Furthermore, a GaxIn1-xN substrate in which, in a photoelectron spectrum along the surface by X-ray photoelectron spectroscopy at a take-off angle of 10°, the ratio between the peak areas of the C1s electron and N1s electron (C 1s electron peak area/N 1s electron peak area) is not greater than 3.

Abstract translation: 提供可稳定生长高品质外延膜的GaxIn1-xN基板，以及用于制造GaxIn1-xN基板的清洗方法。 考虑到GaxIn1-xN基板直径为2英寸，GaxIn1-xN基板在GaxIn1-xN基板表面上存在不少于0.2μm粒径的颗粒数为20个以下的GaxIn1-xN基板。 此外，GaxIn1-xN衬底，其中，在以10°的起飞角通过X射线光电子能谱分析的沿着表面的光电子光谱中，C1s电子和N1s电子的峰面积之比（C 1s电子 峰面积/ N 1s电子峰面积）不大于3。