公开(公告)号：US08845992B2

公开(公告)日：2014-09-30

申请号：US12864874

申请日：2008-12-24

Applicant: Takuji Okahisa ,  Seiji Nakahata ,  Tomoki Uemura

Inventor： Takuji Okahisa ,  Seiji Nakahata ,  Tomoki Uemura

IPC: C01B21/06 ,  C01C1/02 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B29/40 ,  C30B33/12 ,  C30B25/02

CPC classification number: C30B29/403 ,  C30B25/02 ,  C30B29/406 ,  C30B33/12

Abstract: Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking.

Abstract translation: 提供利用晶锭制造的III族氮化物单晶锭和III族氮化物单晶衬底，以及III族氮化物单晶锭的制造方法和III族氮化物单晶衬底的制造方法， 在长度延长生长期间的裂纹减少。 其特征在于包括蚀刻基底衬底的边缘表面的步骤，以及在其基底上外延生长六面体系III族氮化物单晶的步骤，在其侧表面上具有晶面。 为了减少晶锭的长度延长生长期间的裂纹发生，必须控制将多晶和面外取向的晶体沉积到单晶的周围。 如已经机械地改变的刚刚描述的基底边缘表面的层通过蚀刻预先去除，由此在形成在基底基板上的III族氮化物单晶锭的侧表面上形成结晶平面， 因此控制多晶体和面外取向晶体的沉积并减少裂纹发生。

公开(公告)号：US20100322841A1

公开(公告)日：2010-12-23

申请号：US12864874

申请日：2008-12-24

Applicant: Takuji Okahisa ,  Seiji Nakahata ,  Tomoki Uemura

Inventor： Takuji Okahisa ,  Seiji Nakahata ,  Tomoki Uemura

IPC: C30B23/02 ,  C01B21/06

CPC classification number: C30B29/403 ,  C30B25/02 ,  C30B29/406 ,  C30B33/12

Abstract: Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking.

Abstract translation: 提供利用晶锭制造的III族氮化物单晶锭和III族氮化物单晶衬底，以及III族氮化物单晶锭的制造方法和III族氮化物单晶衬底的制造方法， 在长度延长生长期间的裂纹减少。 其特征在于包括蚀刻基底衬底的边缘表面的步骤，以及在其基底上外延生长六面体系III族氮化物单晶的步骤，在其侧表面上具有晶面。 为了减少晶锭的长度延长生长期间的裂纹发生，必须控制将多晶和面外取向的晶体沉积到单晶的周围。 如已经机械地改变的刚刚描述的基底边缘表面的层通过蚀刻预先去除，由此在形成在基底基板上的III族氮化物单晶锭的侧表面上形成结晶平面， 因此控制多晶体和面外取向晶体的沉积并减少裂纹发生。

公开(公告)号：US20090194848A1

公开(公告)日：2009-08-06

申请号：US12298332

申请日：2007-04-24

Applicant: Tomoki Uemura ,  Takashi Sakurada ,  shinsuke Fujiwara ,  Takuji Okahisa ,  Koji Uematsu ,  Hideaki Nakahata

Inventor： Tomoki Uemura ,  Takashi Sakurada ,  shinsuke Fujiwara ,  Takuji Okahisa ,  Koji Uematsu ,  Hideaki Nakahata

IPC: H01L29/20 ,  H01L21/20

CPC classification number: H01L21/02623 ,  C30B25/186 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

Abstract: There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.

Abstract translation: 提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法， 晶种基片。 在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或 反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。 这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

公开(公告)号：US07943964B2

公开(公告)日：2011-05-17

申请号：US12096986

申请日：2006-10-16

Applicant: Shinsuke Fujiwara ,  Tomoki Uemura ,  Takuji Okahisa ,  Koji Uematsu ,  Manabu Okui ,  Muneyuki Nishioka ,  Shin Hashimoto

Inventor： Shinsuke Fujiwara ,  Tomoki Uemura ,  Takuji Okahisa ,  Koji Uematsu ,  Manabu Okui ,  Muneyuki Nishioka ,  Shin Hashimoto

IPC: H01L33/30

CPC classification number: H01L21/02658 ,  C30B25/02 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0254

Abstract: An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm−2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.

Abstract translation: 本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。 主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。 内部区域的总位错密度为1×102cm 2以上且1×10 6 cm -2以下。 由此，可以提供具有大尺寸和合适的位错密度的Al x Ga y In 1-x-y N晶体基板，用作半导体器件的基板，包括Al x Ga y In 1-x-y N晶体基板的半导体器件，以及 制造相同。

公开(公告)号：US20090032907A1

公开(公告)日：2009-02-05

申请号：US11919705

申请日：2006-08-17

Applicant: Tomoki Uemura ,  Shinsuke Fujiwara ,  Takuji Okahisa ,  Ryu Hirota ,  Hideaki Nakahata

Inventor： Tomoki Uemura ,  Shinsuke Fujiwara ,  Takuji Okahisa ,  Ryu Hirota ,  Hideaki Nakahata

IPC: H01L29/20 ,  H01L21/20

CPC classification number: C30B25/02 ,  C30B25/10 ,  C30B29/403 ,  C30B29/406

Abstract: It seems that a conventional method for producing a GaN crystal by using HVPE has a possibility that the crystallinity of a GaN crystal can be improved by producing a GaN crystal at a temperature higher than 1100° C. However, such a conventional method has a problem in that a quartz reaction tube (1) is melted when heated by heaters (5) and (6) to a temperature higher than 1100° C.Disclosed herein is a method for producing a GaxIn1-xN (0≦x≦1) crystal (12) by growing GaxIn1-xN (0≦x≦1) crystal (12) on the surface of a base substrate (7) by the reaction of a material gas, containing ammonia gas and at least one of a gallium halide gas and an indium halide gas, in a quartz reaction tube (1), wherein during the growth of GaxIn1-xN (0≦x≦1) crystal (12), quartz reaction tube (1) is externally heated and base substrate (7) is individually heated.

Abstract translation: 看来，通过使用HVPE制造GaN晶体的常规方法可能通过在高于1100℃的温度下生成GaN晶体来提高GaN晶体的结晶度。然而，这种常规方法具有问题 因为当加热器（5）和（6）加热时，石英反应管（1）熔化到高于1100℃的温度。本文公开了一种制备GaxIn1-xN（0≤x≤1） ）晶体（12）通过使含有氨气体的材料气体与至少一种以上的气体的反应在基底基板（7）的表面上生长GaxIn1-xN（0 <= x <= 1）晶体（12） 在石英反应管（1）中，在GaxIn1-xN（0 <= x <= 1）晶体（12）生长期间，石英反应管（1）被外部加热， 基底基板（7）被单独加热。

公开(公告)号：US08147612B2

公开(公告)日：2012-04-03

申请号：US12298332

申请日：2007-04-24

Applicant: Tomoki Uemura ,  Takashi Sakurada ,  Shinsuke Fujiwara ,  Takuji Okahisa ,  Koji Uematsu ,  Hideaki Nakahata

Inventor： Tomoki Uemura ,  Takashi Sakurada ,  Shinsuke Fujiwara ,  Takuji Okahisa ,  Koji Uematsu ,  Hideaki Nakahata

IPC: C30B21/02

CPC classification number: H01L21/02623 ,  C30B25/186 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

Abstract: There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.

Abstract translation: 提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法， 晶种基片。 在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或 反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。 这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

公开(公告)号：US20090194847A1

公开(公告)日：2009-08-06

申请号：US12096986

申请日：2006-10-16

Applicant: Shinsuke Fujiwara ,  Tomoki Uemura ,  Takuji Okahisa ,  Koji Uematsu ,  Manabu Okui ,  Muneyuki Nishioka ,  Shin Hashimoto

Inventor： Shinsuke Fujiwara ,  Tomoki Uemura ,  Takuji Okahisa ,  Koji Uematsu ,  Manabu Okui ,  Muneyuki Nishioka ,  Shin Hashimoto

IPC: H01L29/20 ,  H01L21/20

CPC classification number: H01L21/02658 ,  C30B25/02 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0254

Abstract: An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm-31 2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.

Abstract translation: 本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。 主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。 内部区域的总位错密度为至少1×102cm-2，最多为1×106cm-31.2。由此，可以提供具有大尺寸和合适位错密度的Al x Ga y In 1-x-y N晶体基板，用作 用于半导体器件的衬底，包括Al x Ga y In 1-x-y N晶体衬底的半导体器件及其制造方法。

公开(公告)号：US20090127664A1

公开(公告)日：2009-05-21

申请号：US12273179

申请日：2008-11-18

Applicant: Takuji OKAHISA ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

Inventor： Takuji OKAHISA ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC: H01L31/20 ,  H01L29/20

CPC classification number: H01L21/02576 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262

Abstract: A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a first group III nitride semiconductor crystal doped with silicon by using silicon tetrachloride (SiCl4) gas as doping gas, on the underlying substrate by vapor phase growth. The growth rate of the first group III nitride semiconductor crystal is at least 200 μm/h and not more than 2000 μm/h.

Abstract translation: III族氮化物半导体晶体的生长方法包括以下步骤：制备下面的衬底，并且通过使用四氯化硅（SiCl 4）气体作为掺杂气体来生长掺杂有硅的第一III族氮化物半导体晶体，通过气相生长在下面的衬底上 成长。 第一III族氮化物半导体晶体的生长速率为至少200μm/ h且不超过2000μm/ h。

公开(公告)号：US20090127663A1

公开(公告)日：2009-05-21

申请号：US12273137

申请日：2008-11-18

Applicant: Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

Inventor： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC: H01L29/20 ,  H01L21/322

CPC classification number: H01L21/02576 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262

Abstract: A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a group III nitride semiconductor crystal doped with silicon by using silicon tetrafluoride gas as doping gas, on the underlying substrate by vapor phase growth.

Abstract translation: III族氮化物半导体晶体的生长方法包括以下步骤：通过使用四氟化硅气体作为掺杂气体，通过气相生长在底层衬底上生长掺杂有硅的III族氮化物半导体晶体。

公开(公告)号：US20090127662A1

公开(公告)日：2009-05-21

申请号：US12273101

申请日：2008-11-18

Applicant: Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

Inventor： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC: H01L29/20

CPC classification number: H01L29/2003 ,  C30B25/02 ,  C30B29/403

Abstract: A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10−4 Ω·m and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.

Abstract translation: III族氮化物半导体晶体基板的直径为至少25mm且不大于160mm。 III族氮化物半导体晶体衬底的电阻率至少为1×10 -4Ω·cm且不大于0.1Ω·cm。 III族氮化物半导体晶体的直径方向的电阻率分布为-30％以上且30％以下。 III族氮化物半导体晶体的厚度方向的电阻率分布为〜16％以上且16％以下。