公开(公告)号：US5214297A

公开(公告)日：1993-05-25

申请号：US921365

申请日：1992-07-28

Applicant: Kenichi Imamura ,  Naoki Yokoyama ,  Toshio Ohshima

Inventor： Kenichi Imamura ,  Naoki Yokoyama ,  Toshio Ohshima

IPC: H01L29/76

CPC classification number: B82Y10/00 ,  H01L29/7606

Abstract: A high-speed semiconductor device comprising emitter potential barrier layer disposed between an emitter layer and a base layer, a collector layer, and a collector potential barrier layer disposed between the base layer and the collector layer. The collector potential barrier layer has a structure having a barrier height changing from a high level to a low level along the direction from the base layer to the collector layer, whereby, even when no bias voltage is applied between the collector layer and the emitter layer, a collector current can flow through the device.

Abstract translation: 包括设置在发射极层和基极层之间的发射极势垒层，集电极层和设置在基极层和集电极层之间的集电极势垒层的高速半导体器件。 集电极势垒层具有从基极层到集电极层的势垒高度从高电平向低电平变化的结构，由此即使在集电极层和发射极层之间不施加偏置电压 集电极电流可以流过器件。

公开(公告)号：US5027179A

公开(公告)日：1991-06-25

申请号：US601011

申请日：1990-10-22

Applicant: Naoki Yokoyama ,  Kenichi Imamura

Inventor： Naoki Yokoyama ,  Kenichi Imamura

IPC: H01L29/68 ,  H01L21/331 ,  H01L29/08 ,  H01L29/20 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737

CPC classification number: B82Y10/00 ,  B82Y30/00 ,  H01L29/0895 ,  H01L29/7376

Abstract: A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer, a base layer, a collector layer facing the base layer to form a PN junction at the interface between the base layer and the collector layer, and a superlattice structure including at least one quantum well defining a sub-band of energy at which carriers resonant-tunnel therethrough. The superlattice is formed at least in the emitter layer and faces. The RHBT has a differential negative resistance characteristic for realizing a variety of logic circuits and includes an electron resonance and a positive hole resonance, for which the generation condition is changeable in response to a mole fraction of material of the emitter layer.

Abstract translation: 具有超晶格结构和PN结的谐振隧穿异质结双极晶体管（RHBT）器件。 RHBT包括发射极层，基极层，面向基极层的集电极层，以在基极层和集电极层之间的界面处形成PN结，以及超晶格结构，其包括至少一个限定子带的量子阱 的载流子谐振隧穿的能量。 至少在发射极层和面内形成超晶格。 RHBT具有用于实现各种逻辑电路的差分负电阻特性，并且包括电子共振和空穴共振，其发电条件可响应于发射极层的材料的摩尔分数而变化。

公开(公告)号：US5151618A

公开(公告)日：1992-09-29

申请号：US659162

申请日：1991-02-22

Applicant: Naoki Yokoyama ,  Kenichi Imamura

Inventor： Naoki Yokoyama ,  Kenichi Imamura

IPC: H01L29/68 ,  H01L21/331 ,  H01L29/08 ,  H01L29/20 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737

CPC classification number: B82Y10/00 ,  B82Y30/00 ,  H01L29/0895 ,  H01L29/7376

Abstract: A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer; a base layer; a collector layer operatively facing the base layer to form a PN junction at the face between the base layer and the collector layer; and a superlattice structure including at least one quantum well defining a sub-band of energy at which carriers resonant-tunnel therethrough, formed at least in the emitter layer and operatively facing to the base layer. The RHBT has a differential negative resistance characteristics for realizing a variety of logic circuits and includes an electron resonance and a positive hole resonance, for which the generation condition is changeable in response to a mole fraction of material of the emitter layer.

公开(公告)号：US5889296A

公开(公告)日：1999-03-30

申请号：US866219

申请日：1997-05-30

Applicant: Kenichi Imamura ,  Naoki Yokoyama

Inventor： Kenichi Imamura ,  Naoki Yokoyama

IPC: H01L27/144 ,  H01L31/11 ,  H01L33/00 ,  H01L31/032

CPC classification number: H01L27/1443 ,  H01L31/1105 ,  H01L33/0016

Abstract: A photodetection device includes a collector layer, a collector electrode connected electrically to the collector layer, a base layer free from a junction region for contacting with an electrode, an emitter layer including at least two, mutually separated emitter regions; and at least two emitter electrodes provided respectively on the emitter regions, wherein the base layer is exposed optically to an external optical radiation.

Abstract translation: 光电检测装置包括集电极层，与集电极层电连接的集电极电极，没有用于与电极接触的结区域的基极层，包括至少两个相互分离的发射极区域的发射极层; 以及分别设置在发射极区域上的至少两个发射电极，其中基底层光学地暴露于外部光辐射。

公开(公告)号：US5031005A

公开(公告)日：1991-07-09

申请号：US111018

申请日：1987-10-21

Applicant: Toshiro Futatsugi ,  Naoki Yokoyama ,  Kenichi Imamura

Inventor： Toshiro Futatsugi ,  Naoki Yokoyama ,  Kenichi Imamura

IPC: H01L29/08 ,  H01L29/205 ,  H01L29/737 ,  H01L33/00

CPC classification number: H01L29/7376 ,  B82Y10/00 ,  H01L29/0895 ,  H01L29/205 ,  H01L33/0004

Abstract: A semiconductor device comprises stacked first through fifth semiconductor layers. The semiconductor device has an energy level condition of .vertline.Ec.sub.3 -Ec.sub.1 .vertline..apprxeq..vertline.Ev.sub.3 -Ev.sub.5 .vertline., where Ec.sub.3 is a resonant energy level of electrons in a conduction band of the third layer and Ev.sub.3 is a resonant energy level of holes in a valence band thereof, and Ec.sub.1 is an energy level of a conduction band of the first layer and Ev.sub.5 is an energy level of a valence band of the fifth layer.

Abstract translation: 半导体器件包括堆叠的第一至第五半导体层。 半导体器件具有| Ec3-Ec1 | APPROX | Ev3-Ev5|的能级条件，其中Ec3是第三层导带中的电子的共振能级，Ev3是化合价中的空穴的共振能级 并且Ec1是第一层的导带的能级，Ev5是第五层的价带的能级。

公开(公告)号：US5677551A

公开(公告)日：1997-10-14

申请号：US516282

申请日：1995-08-17

Applicant: Kenichi Imamura ,  Naoki Yokoyama

Inventor： Kenichi Imamura ,  Naoki Yokoyama

IPC: H01L27/144 ,  H01L31/11 ,  H01L33/00 ,  H01L31/00

CPC classification number: H01L27/1443 ,  H01L31/1105 ,  H01L33/0016

Abstract: A photodetection device includes a collector layer, a collector electrode connected electrically to the collector layer, a base layer free from a junction region for contacting with an electrode, an emitter layer including at least two, mutually separated emitter regions; and at least two emitter electrodes provided respectively on the emitter regions, wherein the base layer is exposed optically to an external optical radiation.

Abstract translation: 光电检测装置包括集电极层，与集电极层电连接的集电极电极，没有用于与电极接触的结区域的基极层，包括至少两个相互分离的发射极区域的发射极层; 以及分别设置在发射极区域上的至少两个发射电极，其中基底层光学地暴露于外部光辐射。

公开(公告)号：US5389804A

公开(公告)日：1995-02-14

申请号：US148402

申请日：1993-11-08

Applicant: Naoki Yokoyama ,  Kenichi Imamura

Inventor： Naoki Yokoyama ,  Kenichi Imamura

IPC: H01L29/68 ,  H01L21/331 ,  H01L29/08 ,  H01L29/20 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L27/082

CPC classification number: B82Y10/00 ,  B82Y30/00 ,  H01L29/0895 ,  H01L29/7376

Abstract: A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer; a base layer; a collector layer operatively facing the base layer to form a PN junction at the face between the base layer and the collector layer; and a superlattice structure including at least one quantum well defining a sub-band of energy at which carriers resonant-tunnel therethrough, formed at least in the emitter layer and operatively facing to the base layer.The RHBT has a differential negative resistance characteristics for realizing a variety of logic circuits and includes an electron resonance and a positive hole resonance, for which the generation condition is changeable in response to a mole fraction of material of the emitter layer.

Abstract translation: 具有超晶格结构和PN结的谐振隧穿异质结双极晶体管（RHBT）器件。 RHBT包括发射极层; 基层; 集电极层，其操作地面向所述基极层，以在所述基极层和所述集电极层之间的表面处形成PN结; 以及超晶格结构，其包括至少一个量子阱，所述至少一个量子阱限定了至少在发射极层中形成并且可操作地面对基极层的载流子谐振通过其的能量的子带。 RHBT具有用于实现各种逻辑电路的差分负电阻特性，并且包括电子共振和空穴共振，其发电条件可响应于发射极层的材料的摩尔分数而变化。

公开(公告)号：US5561306A

公开(公告)日：1996-10-01

申请号：US295538

申请日：1994-08-25

Applicant: Kenichi Imamura ,  Motomu Takatsu ,  Toshihiko Mori

Inventor： Kenichi Imamura ,  Motomu Takatsu ,  Toshihiko Mori

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/02 ,  H01L29/08 ,  H01L29/205 ,  H01L29/737 ,  H01L31/0328 ,  H01L29/06 ,  H01L31/0336

CPC classification number: H01L29/0817

Abstract: A hetero-bipolar transistor includes a collector layer of a first conductivity type, a base layer of a second conductivity type provided on the collector layer, a first emitter structure of the first conductivity type provided on the base layer, and a second emitter structure of the first conductivity type and provided on the base layer, wherein the first and second emitter structures are doped with respect to the base layer, with a sufficiently high impurity concentration level such that a Zener breakdown occurs at the p-n junction formed between the base layer and the first or second emitters upon application of a reverse bias voltage.

Abstract translation: 异双极晶体管包括第一导电类型的集电极层，设置在集电极层上的第二导电类型的基极层，设置在基极层上的第一导电类型的第一发射极结构和第二发射极结构 第一导电类型并且设置在基极层上，其中第一和第二发射极结构相对于基极层掺杂，具有足够高的杂质浓度水平，使得在形成在基极层和基极层之间的pn结处发生齐纳击穿 施加反向偏置电压时的第一或第二发射极。

公开(公告)号：US4868418A

公开(公告)日：1989-09-19

申请号：US151757

申请日：1988-02-03

Applicant: Kenichi Imamura ,  Masao Taguchi

Inventor： Kenichi Imamura ,  Masao Taguchi

IPC: H03K5/08 ,  H01L29/68 ,  H03K5/02 ,  H03K5/24

CPC classification number: B82Y10/00 ,  H03K5/2418

Abstract: A comparator circuit comprises a differential amplifier supplied with a reference signal and an input signal. A resonant-tunneling transistor has a base supplied with an output signal of the differential amplifier. A collector is connected to a first power supply source via a resistor. An emitter is connected to a second power supply source. Therefore, it is possible to simplify a circuit configuration of the comparator circuit and to improve an operation speed of the comparator circuit by outputting an output signal from a connection portion between the resistor and the collector of the transistor.

公开(公告)号：US5936258A

公开(公告)日：1999-08-10

申请号：US632153

申请日：1996-04-15

Applicant: Kenichi Imamura ,  Shun-ichi Muto ,  Naoto Horiguchi ,  Yoshihiro Sugiyama ,  Yoshiaki Nakata

Inventor： Kenichi Imamura ,  Shun-ichi Muto ,  Naoto Horiguchi ,  Yoshihiro Sugiyama ,  Yoshiaki Nakata

IPC: G11C7/00 ,  G11C13/04 ,  H01L29/12 ,  H01L31/0304 ,  H01L31/10 ,  H01L31/105

CPC classification number: B82Y10/00 ,  G11C13/04 ,  G11C7/005 ,  H01L29/127 ,  G11C2216/08

Abstract: A wavelength-domain-multiplication memory comprises a first semiconductor layer including a first conductivity type impurity, a carrier barrier semiconductor layer formed on the first semiconductor layer, and quantum dots formed in the carrier barrier semiconductor layer.

Abstract translation: 波长域倍增存储器包括第一半导体层，包括第一导电型杂质，形成在第一半导体层上的载流子阻挡半导体层，以及形成在载流子阻挡半导体层中的量子点。