Resonant-tunneling heterojunction bipolar transistor device
    1.
    发明授权
    Resonant-tunneling heterojunction bipolar transistor device 失效
    谐振隧道异双极晶体管器件

    公开(公告)号:US5151618A

    公开(公告)日:1992-09-29

    申请号:US659162

    申请日:1991-02-22

    CPC classification number: B82Y10/00 B82Y30/00 H01L29/0895 H01L29/7376

    Abstract: A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer; a base layer; a collector layer operatively facing the base layer to form a PN junction at the face between the base layer and the collector layer; and a superlattice structure including at least one quantum well defining a sub-band of energy at which carriers resonant-tunnel therethrough, formed at least in the emitter layer and operatively facing to the base layer. The RHBT has a differential negative resistance characteristics for realizing a variety of logic circuits and includes an electron resonance and a positive hole resonance, for which the generation condition is changeable in response to a mole fraction of material of the emitter layer.

    Semiconductor optical device and an optical processing system that uses
such a semiconductor optical system
    2.
    发明授权
    Semiconductor optical device and an optical processing system that uses such a semiconductor optical system 失效
    半导体光学器件和使用这种半导体光学系统的光学处理系统

    公开(公告)号:US5889296A

    公开(公告)日:1999-03-30

    申请号:US866219

    申请日:1997-05-30

    CPC classification number: H01L27/1443 H01L31/1105 H01L33/0016

    Abstract: A photodetection device includes a collector layer, a collector electrode connected electrically to the collector layer, a base layer free from a junction region for contacting with an electrode, an emitter layer including at least two, mutually separated emitter regions; and at least two emitter electrodes provided respectively on the emitter regions, wherein the base layer is exposed optically to an external optical radiation.

    Abstract translation: 光电检测装置包括集电极层,与集电极层电连接的集电极电极,没有用于与电极接触的结区域的基极层,包括至少两个相互分离的发射极区域的发射极层; 以及分别设置在发射极区域上的至少两个发射电极,其中基底层光学地暴露于外部光辐射。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US5031005A

    公开(公告)日:1991-07-09

    申请号:US111018

    申请日:1987-10-21

    Abstract: A semiconductor device comprises stacked first through fifth semiconductor layers. The semiconductor device has an energy level condition of .vertline.Ec.sub.3 -Ec.sub.1 .vertline..apprxeq..vertline.Ev.sub.3 -Ev.sub.5 .vertline., where Ec.sub.3 is a resonant energy level of electrons in a conduction band of the third layer and Ev.sub.3 is a resonant energy level of holes in a valence band thereof, and Ec.sub.1 is an energy level of a conduction band of the first layer and Ev.sub.5 is an energy level of a valence band of the fifth layer.

    Abstract translation: 半导体器件包括堆叠的第一至第五半导体层。 半导体器件具有| Ec3-Ec1 | APPROX | Ev3-Ev5|的能级条件,其中Ec3是第三层导带中的电子的共振能级,Ev3是化合价中的空穴的共振能级 并且Ec1是第一层的导带的能级,Ev5是第五层的价带的能级。

    Semiconductor optical device and an optical processing system that uses
such a semiconductor optical system
    4.
    发明授权
    Semiconductor optical device and an optical processing system that uses such a semiconductor optical system 失效
    半导体光学器件和使用这种半导体光学系统的光学处理系统

    公开(公告)号:US5677551A

    公开(公告)日:1997-10-14

    申请号:US516282

    申请日:1995-08-17

    CPC classification number: H01L27/1443 H01L31/1105 H01L33/0016

    Abstract: A photodetection device includes a collector layer, a collector electrode connected electrically to the collector layer, a base layer free from a junction region for contacting with an electrode, an emitter layer including at least two, mutually separated emitter regions; and at least two emitter electrodes provided respectively on the emitter regions, wherein the base layer is exposed optically to an external optical radiation.

    Abstract translation: 光电检测装置包括集电极层,与集电极层电连接的集电极电极,没有用于与电极接触的结区域的基极层,包括至少两个相互分离的发射极区域的发射极层; 以及分别设置在发射极区域上的至少两个发射电极,其中基底层光学地暴露于外部光辐射。

    Resonant-tunneling heterojunction bipolar transistor device
    5.
    发明授权
    Resonant-tunneling heterojunction bipolar transistor device 失效
    谐振隧穿异质结双极晶体管器件

    公开(公告)号:US5389804A

    公开(公告)日:1995-02-14

    申请号:US148402

    申请日:1993-11-08

    CPC classification number: B82Y10/00 B82Y30/00 H01L29/0895 H01L29/7376

    Abstract: A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer; a base layer; a collector layer operatively facing the base layer to form a PN junction at the face between the base layer and the collector layer; and a superlattice structure including at least one quantum well defining a sub-band of energy at which carriers resonant-tunnel therethrough, formed at least in the emitter layer and operatively facing to the base layer.The RHBT has a differential negative resistance characteristics for realizing a variety of logic circuits and includes an electron resonance and a positive hole resonance, for which the generation condition is changeable in response to a mole fraction of material of the emitter layer.

    Abstract translation: 具有超晶格结构和PN结的谐振隧穿异质结双极晶体管(RHBT)器件。 RHBT包括发射极层; 基层; 集电极层,其操作地面向所述基极层,以在所述基极层和所述集电极层之间的表面处形成PN结; 以及超晶格结构,其包括至少一个量子阱,所述至少一个量子阱限定了至少在发射极层中形成并且可操作地面对基极层的载流子谐振通过其的能量的子带。 RHBT具有用于实现各种逻辑电路的差分负电阻特性,并且包括电子共振和空穴共振,其发电条件可响应于发射极层的材料的摩尔分数而变化。

    High-speed semiconductor device
    6.
    发明授权
    High-speed semiconductor device 失效
    高速半导体器件

    公开(公告)号:US5214297A

    公开(公告)日:1993-05-25

    申请号:US921365

    申请日:1992-07-28

    CPC classification number: B82Y10/00 H01L29/7606

    Abstract: A high-speed semiconductor device comprising emitter potential barrier layer disposed between an emitter layer and a base layer, a collector layer, and a collector potential barrier layer disposed between the base layer and the collector layer. The collector potential barrier layer has a structure having a barrier height changing from a high level to a low level along the direction from the base layer to the collector layer, whereby, even when no bias voltage is applied between the collector layer and the emitter layer, a collector current can flow through the device.

    Abstract translation: 包括设置在发射极层和基极层之间的发射极势垒层,集电极层和设置在基极层和集电极层之间的集电极势垒层的高速半导体器件。 集电极势垒层具有从基极层到集电极层的势垒高度从高电平向低电平变化的结构,由此即使在集电极层和发射极层之间不施加偏置电压 集电极电流可以流过器件。

    Resonant-tunneling heterojunction bipolar transistor device
    7.
    发明授权
    Resonant-tunneling heterojunction bipolar transistor device 失效
    谐振隧穿异质结双极晶体管器件

    公开(公告)号:US5027179A

    公开(公告)日:1991-06-25

    申请号:US601011

    申请日:1990-10-22

    CPC classification number: B82Y10/00 B82Y30/00 H01L29/0895 H01L29/7376

    Abstract: A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer, a base layer, a collector layer facing the base layer to form a PN junction at the interface between the base layer and the collector layer, and a superlattice structure including at least one quantum well defining a sub-band of energy at which carriers resonant-tunnel therethrough. The superlattice is formed at least in the emitter layer and faces. The RHBT has a differential negative resistance characteristic for realizing a variety of logic circuits and includes an electron resonance and a positive hole resonance, for which the generation condition is changeable in response to a mole fraction of material of the emitter layer.

    Abstract translation: 具有超晶格结构和PN结的谐振隧穿异质结双极晶体管(RHBT)器件。 RHBT包括发射极层,基极层,面向基极层的集电极层,以在基极层和集电极层之间的界面处形成PN结,以及超晶格结构,其包括至少一个限定子带的量子阱 的载流子谐振隧穿的能量。 至少在发射极层和面内形成超晶格。 RHBT具有用于实现各种逻辑电路的差分负电阻特性,并且包括电子共振和空穴共振,其发电条件可响应于发射极层的材料的摩尔分数而变化。

    INFORMATION RECORDING DEVICE
    10.
    发明申请
    INFORMATION RECORDING DEVICE 有权
    信息记录装置

    公开(公告)号:US20130249164A1

    公开(公告)日:2013-09-26

    申请号:US13990644

    申请日:2011-11-30

    Abstract: Provided is an information recording device in which jam processing operation can be easily performed with simple operation when a recording medium such as a card is jammed in a conveyance passage. A card storing section and a medium conveyance passage for conveying a card to an image forming section are arranged in a housing at upper and lower sides and a passage open-close member for removing a card jammed at the image forming section is arranged therebetween. Then, electronic information recording means is incorporated in the passage open-close member and a medium conveyance path which conveys a card toward the electronic information recording means is arranged on a medium introduction passage for feeding a card from the card storing section to the medium conveyance passage. According to the above, a card jammed at the image forming section or the information recording section can be easily removed to the outside of the device by opening the card storing section.

    Abstract translation: 提供一种信息记录装置,其中当诸如卡片的记录介质卡在输送通道中时,可以简单地进行卡纸处理操作。 在上下侧的壳体中配置有卡片存储部和用于将卡传送到图像形成部的介质输送通道,并且布置有用于去除卡在图像形成部的卡的通道开闭部件。 然后,电子信息记录装置结合在通道开 - 关构件中,并且向电子信息记录装置传送卡的介质输送路径被布置在介质引入通道上,用于将卡从卡存储部分馈送到介质输送 通道。 根据上述,通过打开卡存储部,可以容易地将卡在图像形成部分或信息记录部分的卡片移除到装置的外部。

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