Abstract:
A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer; a base layer; a collector layer operatively facing the base layer to form a PN junction at the face between the base layer and the collector layer; and a superlattice structure including at least one quantum well defining a sub-band of energy at which carriers resonant-tunnel therethrough, formed at least in the emitter layer and operatively facing to the base layer. The RHBT has a differential negative resistance characteristics for realizing a variety of logic circuits and includes an electron resonance and a positive hole resonance, for which the generation condition is changeable in response to a mole fraction of material of the emitter layer.
Abstract:
A photodetection device includes a collector layer, a collector electrode connected electrically to the collector layer, a base layer free from a junction region for contacting with an electrode, an emitter layer including at least two, mutually separated emitter regions; and at least two emitter electrodes provided respectively on the emitter regions, wherein the base layer is exposed optically to an external optical radiation.
Abstract:
A semiconductor device comprises stacked first through fifth semiconductor layers. The semiconductor device has an energy level condition of .vertline.Ec.sub.3 -Ec.sub.1 .vertline..apprxeq..vertline.Ev.sub.3 -Ev.sub.5 .vertline., where Ec.sub.3 is a resonant energy level of electrons in a conduction band of the third layer and Ev.sub.3 is a resonant energy level of holes in a valence band thereof, and Ec.sub.1 is an energy level of a conduction band of the first layer and Ev.sub.5 is an energy level of a valence band of the fifth layer.
Abstract:
A photodetection device includes a collector layer, a collector electrode connected electrically to the collector layer, a base layer free from a junction region for contacting with an electrode, an emitter layer including at least two, mutually separated emitter regions; and at least two emitter electrodes provided respectively on the emitter regions, wherein the base layer is exposed optically to an external optical radiation.
Abstract:
A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer; a base layer; a collector layer operatively facing the base layer to form a PN junction at the face between the base layer and the collector layer; and a superlattice structure including at least one quantum well defining a sub-band of energy at which carriers resonant-tunnel therethrough, formed at least in the emitter layer and operatively facing to the base layer.The RHBT has a differential negative resistance characteristics for realizing a variety of logic circuits and includes an electron resonance and a positive hole resonance, for which the generation condition is changeable in response to a mole fraction of material of the emitter layer.
Abstract:
A high-speed semiconductor device comprising emitter potential barrier layer disposed between an emitter layer and a base layer, a collector layer, and a collector potential barrier layer disposed between the base layer and the collector layer. The collector potential barrier layer has a structure having a barrier height changing from a high level to a low level along the direction from the base layer to the collector layer, whereby, even when no bias voltage is applied between the collector layer and the emitter layer, a collector current can flow through the device.
Abstract:
A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer, a base layer, a collector layer facing the base layer to form a PN junction at the interface between the base layer and the collector layer, and a superlattice structure including at least one quantum well defining a sub-band of energy at which carriers resonant-tunnel therethrough. The superlattice is formed at least in the emitter layer and faces. The RHBT has a differential negative resistance characteristic for realizing a variety of logic circuits and includes an electron resonance and a positive hole resonance, for which the generation condition is changeable in response to a mole fraction of material of the emitter layer.
Abstract:
A sheet feeding apparatus for feeding sheets is provided with a multi feed detecting section for detecting multi feed of conveyed sheets in a predetermined detection position of a conveyance path, and first and second discharge sections to which multi-fed sheets with the multi feed detected are discharged, and corresponding to one of a front end position of the multi-fed sheets at the time the multi feed detecting section detects the multi feed of sheets, a sheet storage state of the second discharge section, sheet storage states of the first and second discharge sections, a size of sheets and weighing, selects one of the first and second discharge sections to discharge the multi-fed sheets to the selected discharge section.
Abstract:
An object of the invention is to provide an effective cooling-energy storing performance and a stable cooling-energy radiating performance and to realize a high productivity. An evaporator has a plurality of refrigerant tubes arranged at almost equal intervals to form therebetween accommodating spaces. A plurality of cooling-storage containers are arranged in some of the accommodating spaces and fins are arranged in the remaining accommodating spaces. A cooling-storage unit is formed by one cooling-storage container and two refrigerant tubes arranged at both sides of the cooling-storage container. Each of the cooling-storage container has projections extending from one wall portion to the other wall portion to form heat exchange portions. The cooling-storage container is connected to the refrigerant tubes by soldering material.
Abstract:
Provided is an information recording device in which jam processing operation can be easily performed with simple operation when a recording medium such as a card is jammed in a conveyance passage. A card storing section and a medium conveyance passage for conveying a card to an image forming section are arranged in a housing at upper and lower sides and a passage open-close member for removing a card jammed at the image forming section is arranged therebetween. Then, electronic information recording means is incorporated in the passage open-close member and a medium conveyance path which conveys a card toward the electronic information recording means is arranged on a medium introduction passage for feeding a card from the card storing section to the medium conveyance passage. According to the above, a card jammed at the image forming section or the information recording section can be easily removed to the outside of the device by opening the card storing section.