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    SEMICONDUCTOR DEVICE, HEMT DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE, HEMT DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    半导体器件，HEMT器件及其制造半导体器件的方法

    公开(公告)号：US20140042451A1

    公开(公告)日：2014-02-13

    申请号：US13855148

    申请日：2013-04-02

    申请人： NGK INSULATORS, LTD.

    发明人： Tomohiko SUGIYAMA ,  Sota MAEHARA ,  Shigeaki SUMIYA ,  Mitsuhiro TANAKA

    IPC分类号： H01L29/778 ,  H01L21/02 ,  H01L29/20

    CPC分类号： H01L29/778 ,  H01L21/02293 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/432 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7786

    摘要： Provided is a semiconductor device in which a reverse leakage current is suppressed and the mobility of a two-dimensional electron gas is high. A semiconductor device includes: an epitaxial substrate in which a group of group-III nitride layers are laminated on a base substrate such that a (0001) crystal plane is substantially in parallel with a substrate surface; and a Schottky electrode. The epitaxial substrate includes: a channel layer made of a first group-III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); a barrier layer made of a second group-III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0); an intermediate layer made of GaN adjacent to the barrier layer; and a cap layer made of AlN and adjacent to the intermediate layer. A Schottky electrode is bonded to the cap layer.

    摘要翻译： 提供了抑制反向泄漏电流并且二维电子气的迁移率高的半导体器件。 半导体器件包括：外延衬底，其中一组III族氮化物层被层压在基底衬底上，使得（0001）晶面基本上与衬底表面平行; 和肖特基电极。 外延衬底包括：由具有In x1Aly1Gaz1N（x1 + y1 + z1 = 1，z1> 0）的组成的第一III族氮化物制成的沟道层; 由具有Inx2Aly2N（x2 + y2 = 1，x2> 0，y2> 0）的组成的第二III族氮化物制成的阻挡层; 由邻接阻挡层的GaN制成的中间层; 以及由AlN制成并与中间层相邻的盖层。 肖特基电极与盖层结合。

    EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    5.
    发明申请
    EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
    用于半导体器件和半导体器件的外延衬底

    公开(公告)号：US20130015466A1

    公开(公告)日：2013-01-17

    申请号：US13623308

    申请日：2012-09-20

    申请人： NGK Insulators, Ltd.

    发明人： Makoto MIYOSHI ,  Mikiya ICHIMURA ,  Tomohiko SUGIYAMA ,  Mitsuhiro TANAKA

    IPC分类号： H01L29/20

    CPC分类号： H01L29/7786 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/34 ,  H01L29/475 ,  H01L29/66068 ,  H01L29/66462

    摘要： Provided is an epitaxial substrate for a semiconductor device, which has excellent schottky contact characteristics that are stable over time. The epitaxial substrate for a semiconductor device includes a base substrate, a channel layer formed of a first group III nitride containing at least Ga and having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1), and a barrier layer formed of a second group III nitride containing at least In and Al and having a composition of Inx2Aly2Gaz2N (x2+y2+z2=1), wherein the barrier layer has tensile strains in an in-plane direction, and pits are formed on a surface of the barrier layer at a surface density of 5×107/cm2 or more and 1×109/cm2 or less.

    摘要翻译： 提供了一种半导体器件的外延衬底，其具有优异的随时间​​稳定的肖特基接触特性。 用于半导体器件的外延衬底包括基底，由至少含有Ga的第一III族氮化物形成的沟道层，并且具有Inx1Ally1Gaz1N（x1 + y1 + z1 = 1）的组成，以及由第二 至少包含In和Al并且具有Inx2Aly2Gaz2N（x2 + y2 + z2 = 1）的组成的III族氮化物，其中阻挡层在面内方向上具有拉伸应变，并且在阻挡层的表面上形成凹坑 表面密度为5×10 7 / cm 2以上且1×10 9 / cm 2以下。