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公开(公告)号：US11127686B2
公开(公告)日：2021-09-21
申请号：US16832756
申请日：2020-03-27
发明人： Ken Wakaki
IPC分类号： H01L23/538 , H03F1/56 , H01L23/31 , H01L23/498 , H01L23/66 , H01L25/065 , H01L25/16 , H03F3/213 , H04B1/40 , H01L23/00
摘要： A radio-frequency module (10) includes an IC chip (20) and a mounted component (41, 42, 43) mounted on the IC chip (20). The IC chip (20) includes a core substrate (21) composed of a semiconductor having a first main surface (211) and a second main surface (212) opposed to each other, and a metal wiring layer (22) formed on the first main surface (211) of the core substrate (21) and having a contact surface in contact with the first main surface (211) and a third main surface (221) opposed to the contact surface. The mounted component (41, 42, 43) is mounted at the third main surface (221) side.
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公开(公告)号：US11469718B2
公开(公告)日：2022-10-11
申请号：US17078189
申请日：2020-10-23
发明人： Makoto Tabei , Ken Wakaki , Masamichi Tokuda , Daisuke Watanabe
摘要： An amplifier circuit amplifies a radio-frequency signal. The amplifier circuit includes an amplifier, an input matching circuit connected to an input side of the amplifier and matches impedance, and a protection circuit connected to a node in a path within a path between an input matching circuit and the amplifier. The protection circuit includes a first diode connected between the node and a ground, and a second diode connected in parallel with the first diode and connected in a direction opposite to the first diode between the node and the ground. A threshold voltage of each of the first diode and the second diode is greater than a maximum voltage amplitude of the input signal at the node and is less than a difference between a withstand voltage of the amplifier and the bias voltage.
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3.发明授权Radio-frequency amplifier circuit and control voltage setting method for radio-frequency amplifier circuit 有权射频放大器电路和射频放大器电路的控制电压设定方法公开(公告)号：US09479117B2
公开(公告)日：2016-10-25
申请号：US14926367
申请日：2015-10-29
发明人： Ken Wakaki
IPC分类号： H03F3/04 , H03F1/26 , H03G3/10 , H03F1/02 , H03F1/22 , H03F3/193 , H03F1/32 , H03F1/56 , H03F3/195 , H03F3/24
CPC分类号： H03F1/0205 , H03F1/0266 , H03F1/0272 , H03F1/223 , H03F1/226 , H03F1/3205 , H03F1/56 , H03F3/193 , H03F3/1935 , H03F3/195 , H03F3/245 , H03F2200/108 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/451 , H03F2200/516
摘要： A radio-frequency amplifier circuit includes first and second FETs cascode-connected to each other. The gate of the first FET is connected to a radio-frequency input terminal, and the drain of the second FET is connected to a radio-frequency output terminal. The source of the first FET is connected to a ground, and the drain of the first FET and the source of the second FET are connected to each other. A drive voltage is applied to the drain of the second FET. A bias setting unit is connected to the gate of the second FET. The bias setting unit sets a second control voltage to be applied to the second FET so that a node voltage between the drain of the first FET and the source of the second FET will be substantially half of the drive voltage.
摘要翻译： 射频放大器电路包括彼此串联连接的第一和第二FET。 第一FET的栅极连接到射频输入端子，第二FET的漏极连接到射频输出端子。 第一FET的源极连接到地，第一FET的漏极和第二FET的源极彼此连接。 驱动电压施加到第二FET的漏极。 偏置设置单元连接到第二FET的栅极。 偏置设置单元设置要施加到第二FET的第二控制电压，使得第一FET的漏极和第二FET的源极之间的节点电压将大致为驱动电压的一半。
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公开(公告)号：US10673395B2
公开(公告)日：2020-06-02
申请号：US16138047
申请日：2018-09-21
发明人： Daisuke Watanabe , Ken Wakaki
摘要： An amplifier according to an embodiment of the present disclosure includes a first transistor and a first matching circuit. The first matching circuit is connected between an input terminal and a control terminal of the first transistor. A first terminal of the first transistor is connected to a ground. A second terminal of the first transistor is connected to a power supply and an output terminal. The first matching circuit includes a first inductor, a second inductor, and a first switch. The first inductor has an end connected to the control terminal. The second inductor has an end connected to the other end of the first inductor. The first switch is configured to selectively switch between electrical continuity between the input terminal and the other end of the first inductor and electrical continuity between the input terminal and the other end of the second inductor.
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公开(公告)号：US20170359046A1
公开(公告)日：2017-12-14
申请号：US15618446
申请日：2017-06-09
发明人： Ken Wakaki , Daisuke Watanabe
CPC分类号： H03G3/3042 , H03F1/223 , H03F1/56 , H03F3/193 , H03F2200/222 , H03F2200/294 , H03F2200/318 , H03F2200/387 , H03F2200/451 , H03F2200/61 , H03G1/0023 , H03G1/0035 , H03G1/0088 , H03G3/3052 , H03G2201/106
摘要： An amplifier according to an embodiment of the present invention includes a first transistor and a second transistor that are connected between a ground point and a power supply. A control terminal of the first transistor is connected to an input terminal. A first terminal of the first transistor is connected to the ground point. A second terminal of the second transistor is connected to an output terminal. The amplifier further includes an impedance element and a variable resistance unit. The impedance element is connected between the second terminal of the second transistor and the power supply. The variable resistance unit is connected between the second terminal of the first transistor and the first terminal of the second transistor.
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公开(公告)号：US11290062B2
公开(公告)日：2022-03-29
申请号：US16783423
申请日：2020-02-06
发明人： Ken Wakaki
摘要： An amplifier circuit includes a first transistor including a signal input portion into which a signal is input from the outside, and a load inductor connected between the first transistor and a power supply line. In addition, the amplifier circuit includes a feedback circuit, which is connected between any position between the load inductor and the first transistor and the signal input portion of the first transistor. The gain and linearity are determined as appropriate in accordance with the amount of feedback from this feedback circuit.
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公开(公告)号：US10270411B2
公开(公告)日：2019-04-23
申请号：US15618446
申请日：2017-06-09
发明人： Ken Wakaki , Daisuke Watanabe
摘要： An amplifier according to an embodiment of the present invention includes a first transistor and a second transistor that are connected between a ground point and a power supply. A control terminal of the first transistor is connected to an input terminal. A first terminal of the first transistor is connected to the ground point. A second terminal of the second transistor is connected to an output terminal. The amplifier further includes an impedance element and a variable resistance unit. The impedance element is connected between the second terminal of the second transistor and the power supply. The variable resistance unit is connected between the second terminal of the first transistor and the first terminal of the second transistor.
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8.发明申请RADIO-FREQUENCY AMPLIFIER CIRCUIT AND CONTROL VOLTAGE SETTING METHOD FOR RADIO-FREQUENCY AMPLIFIER CIRCUIT 有权无线电频率放大器电路的无功放大器电路和控制电压设置方法公开(公告)号：US20160049908A1
公开(公告)日：2016-02-18
申请号：US14926367
申请日：2015-10-29
发明人： Ken Wakaki
CPC分类号： H03F1/0205 , H03F1/0266 , H03F1/0272 , H03F1/223 , H03F1/226 , H03F1/3205 , H03F1/56 , H03F3/193 , H03F3/1935 , H03F3/195 , H03F3/245 , H03F2200/108 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/451 , H03F2200/516
摘要： A radio-frequency amplifier circuit includes first and second FETs cascode-connected to each other. The gate of the first FET is connected to a radio-frequency input terminal, and the drain of the second FET is connected to a radio-frequency output terminal. The source of the first FET is connected to a ground, and the drain of the first FET and the source of the second FET are connected to each other. A drive voltage is applied to the drain of the second FET. A bias setting unit is connected to the gate of the second FET. The bias setting unit sets a second control voltage to be applied to the second FET so that a node voltage between the drain of the first FET and the source of the second FET will be substantially half of the drive voltage.
摘要翻译： 射频放大器电路包括彼此串联连接的第一和第二FET。 第一FET的栅极连接到射频输入端子，第二FET的漏极连接到射频输出端子。 第一FET的源极连接到地，第一FET的漏极和第二FET的源极彼此连接。 驱动电压施加到第二FET的漏极。 偏置设置单元连接到第二FET的栅极。 偏置设置单元设置要施加到第二FET的第二控制电压，使得第一FET的漏极和第二FET的源极之间的节点电压将大致为驱动电压的一半。
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公开(公告)号：US11309847B2
公开(公告)日：2022-04-19
申请号：US17006020
申请日：2020-08-28
发明人： Ken Wakaki
摘要： An amplifier circuit has an amplification path including an amplifier and a bypass path configured to bypass at least the amplifier. The bypass path includes a switch coupled in series on the bypass path and another switch coupled in series between the bypass path and ground. The amplification path further includes an inductor coupled on an output side with respect to the amplifier and a switch coupled between the inductor and ground on a path between the inductor and the amplifier.
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公开(公告)号：US11296661B2
公开(公告)日：2022-04-05
申请号：US16822146
申请日：2020-03-18
发明人： Ken Wakaki
摘要： An amplifier circuit that amplifies a high frequency signal includes a transistor that is an example of an amplifier integrated into an IC device and an inductor connected to an input terminal of the transistor, and the inductor includes a first inductor integrated into the IC device and a second inductor connected in series to the first inductor and included in a first component different from the IC device.
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