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公开(公告)号：US11972909B2
公开(公告)日：2024-04-30
申请号：US17666961
申请日：2022-02-08
CPC分类号： H01G9/042 , H01G9/0029 , H01G9/15 , H05K1/182 , H05K2201/10015
摘要： A capacitor disposed inside a multilayer substrate that includes a conductive pattern on a surface thereof and an anode portion having a first conductive metal member and a porous portion disposed on a surface of the first conductive metal member, a cathode portion, and a dielectric layer disposed between the anode portion and the cathode portion. Moreover, the anode portion is led out to a surface side of the multilayer substrate by a connection electrode including an alloy layer containing a metal forming the first conductive metal member and a conductive layer disposed on the alloy layer, and in which the connection electrode is connected to the conductive pattern formed on the surface of the multilayer substrate.
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公开(公告)号：US20140134782A1
公开(公告)日：2014-05-15
申请号：US14157768
申请日：2014-01-17
发明人： Kazutaka Nakamura
IPC分类号： H01L31/18 , H01L31/032
CPC分类号： H01L31/18 , H01L31/02963 , H01L31/032 , H01L31/109 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： An ultraviolet sensor that includes a p-type semiconductor layer principally composed of (Ni, Zn)O, an n-type semiconductor layer composed of ZnO which is joined to the p-type semiconductor layer, an internal electrode embedded in the p-type semiconductor layer, and first and second terminal electrodes formed at both ends of the p-type semiconductor layer. The surface roughness of the p-type semiconductor layer is 1.5 μm or less, and preferably 0.3 μm or more and 1.0 μm or less. In a manufacturing process, the formed product prior to firing and/or the p-type semiconductor layer after firing is polished by barrel polishing so that the surface roughness Ra thereof is 1.0 μm or less. Thereby, light absorption efficiency can be improved to directly detect a desired large photocurrent and secure high reliability, and a spectral property can be controlled to strongly respond to various wavelength bands of ultraviolet light.
摘要翻译： 一种紫外线传感器，包括主要由（Ni，Zn）O构成的p型半导体层，与p型半导体层接合的由ZnO构成的n型半导体层，嵌入p型半导体层的内部电极 半导体层，以及形成在p型半导体层的两端的第一和第二端子电极。 p型半导体层的表面粗糙度为1.5μm以下，优选为0.3μm以上1.0μm以下。 在制造方法中，烧成后的成形体和/或烧成后的p型半导体层通过滚筒研磨进行研磨，使其表面粗糙度Ra为1.0μm以下。 由此，可以提高光吸收效率，直接检测出期望的大光电流并确保高可靠性，并且可以控制光谱特性以对紫外光的各种波长带强烈响应。
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公开(公告)号：US20130161613A1
公开(公告)日：2013-06-27
申请号：US13771195
申请日：2013-02-20
发明人： Kazutaka Nakamura
IPC分类号： H01L31/0256 , H01L31/18
CPC分类号： H01L31/18 , H01L31/02963 , H01L31/032 , H01L31/109 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： An ultraviolet sensor that includes a p-type semiconductor layer principally composed of (Ni, Zn)O, an n-type semiconductor layer composed of ZnO which is joined to the p-type semiconductor layer, an internal electrode embedded in the p-type semiconductor layer, and first and second terminal electrodes formed at both ends of the p-type semiconductor layer. The surface roughness of the p-type semiconductor layer is 1.5 μm or less, and preferably 0.3 μm or more and 1.0 μm or less. In a manufacturing process, the formed product prior to firing and/or the p-type semiconductor layer after firing is polished by barrel polishing so that the surface roughness Ra thereof is 1.0 μm or less. Thereby, light absorption efficiency can be improved to directly detect a desired large photocurrent and secure high reliability, and a spectral property can be controlled to strongly respond to various wavelength bands of ultraviolet light.
摘要翻译： 一种紫外线传感器，包括主要由（Ni，Zn）O构成的p型半导体层，与p型半导体层接合的由ZnO构成的n型半导体层，嵌入p型半导体层的内部电极 半导体层，以及形成在p型半导体层的两端的第一和第二端子电极。 p型半导体层的表面粗糙度为1.5μm以下，优选为0.3μm以上且1.0μm以下。 在制造过程中，烧成后的成形体和/或烧成后的p型半导体层通过滚筒研磨进行研磨，使其表面粗糙度Ra为1.0μm以下。 由此，可以提高光吸收效率，直接检测出期望的大光电流并确保高可靠性，并且可以控制光谱特性以对紫外光的各种波长带强烈响应。
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公开(公告)号：US20130092933A1
公开(公告)日：2013-04-18
申请号：US13706435
申请日：2012-12-06
发明人： Kazutaka Nakamura
IPC分类号： H01L31/0296 , H01L31/18
CPC分类号： H01L31/0296 , H01L31/0328 , H01L31/109 , H01L31/18 , H01L31/1828
摘要： An ultraviolet sensor has a p-type semiconductor layer composed of a solid solution of NiO and ZnO, and an n-type semiconductor layer composed of ZnO and joined to the p-type semiconductor layer such that a part of the surface of the p-type semiconductor layer is exposed. In the p-type semiconductor layer, trivalent Ni is contained in a crystal grain in a state of being solid-solved with the solid solution of NiO and ZnO. The trivalent Ni can be contained in the crystal grain of the p-type semiconductor layer by adding NiOOH to NiO and ZnO, and firing the resulting mixture. Thereby, an inexpensive ultraviolet sensor capable of being downsized, which can easily detect the intensity of ultraviolet light by a photovoltaic power without utilizing a peripheral circuit can be realized.
摘要翻译： 紫外线传感器具有由NiO和ZnO的固溶体构成的p型半导体层和由ZnO构成的n型半导体层，并与p型半导体层接合，使得p型半导体层的p型半导体层的一部分， 型半导体层露出。 在p型半导体层中，利用NiO和ZnO的固溶体固溶的状态，在晶粒中含有3价Ni。 通过向NiO和ZnO中添加NiOOH，可以在p型半导体层的晶粒中含有三价Ni，并烧结所得到的混合物。 因此，可以实现能够小型化的便宜的紫外线传感器，其可以在不利用外围电路的情况下容易地通过光伏电力检测紫外光的强度。
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公开(公告)号：US09064990B2
公开(公告)日：2015-06-23
申请号：US13706435
申请日：2012-12-06
发明人： Kazutaka Nakamura
IPC分类号： H01L31/0296 , H01L31/109 , H01L31/18 , H01L31/0328
CPC分类号： H01L31/0296 , H01L31/0328 , H01L31/109 , H01L31/18 , H01L31/1828
摘要： An ultraviolet sensor has a p-type semiconductor layer composed of a solid solution of NiO and ZnO, and an n-type semiconductor layer composed of ZnO and joined to the p-type semiconductor layer such that a part of the surface of the p-type semiconductor layer is exposed. In the p-type semiconductor layer, trivalent Ni is contained in a crystal grain in a state of being solid-solved with the solid solution of NiO and ZnO. The trivalent Ni can be contained in the crystal grain of the p-type semiconductor layer by adding NiOOH to NiO and ZnO, and firing the resulting mixture. Thereby, an inexpensive ultraviolet sensor capable of being downsized, which can easily detect the intensity of ultraviolet light by a photovoltaic power without utilizing a peripheral circuit can be realized.
摘要翻译： 紫外线传感器具有由NiO和ZnO的固溶体构成的p型半导体层和由ZnO构成的n型半导体层，并与p型半导体层接合，使得p型半导体层的p型半导体层的一部分， 型半导体层露出。 在p型半导体层中，利用NiO和ZnO的固溶体固溶的状态，在晶粒中含有3价Ni。 通过向NiO和ZnO中添加NiOOH，可以在p型半导体层的晶粒中含有三价Ni，并烧结所得到的混合物。 因此，可以实现能够小型化的便宜的紫外线传感器，其可以在不利用外围电路的情况下容易地通过光伏电力检测紫外光的强度。
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公开(公告)号：US20190263517A1
公开(公告)日：2019-08-29
申请号：US16412678
申请日：2019-05-15
发明人： Kazutaka Nakamura , Masaki Hamamoto
IPC分类号： B64C33/02
摘要： A wing unit is used in a wing flapping apparatus to perform a swinging motion to thereby generate levitation force. The wing unit includes a nonwoven fabric that forms a wing surface; a frame body overlaid on the nonwoven fabric and extending along the wing surface; and a resin material disposed in a cavity included in the nonwoven fabric to integrate the nonwoven fabric and the frame body with each other. According to this configuration, a light-weight and high-strength wing unit that produces a suppressed wing flapping noise, a wing flapping apparatus including the wing unit, and a method of manufacturing the wing unit are provided.
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公开(公告)号：US20190002097A1
公开(公告)日：2019-01-03
申请号：US16106806
申请日：2018-08-21
摘要： A wing flapping apparatus includes a motive power source; a power transmission mechanism; and a wing unit driven by the power transmission mechanism. The power transmission mechanism includes a rotation transmission member configured to rotate upon reception of motive power transmitted from the motive power source; a slider configured to linearly reciprocate in an X-axis direction upon reception of the motive power transmitted from the rotation transmission member and a rotating body configured to reciprocate in a rotation direction upon reception of the motive power transmitted from the slider. The wing unit is configured to swing such that its distal end moves approximately in the X-axis direction as the rotating body reciprocates in the rotation direction. The power transmission mechanism further includes a pair of crank arms each configured to connect the rotation transmission member and the slider. The pair of crank arms each has: one end rotatably connected to the rotation transmission member and the other end rotatably and slidably connected to the slider.
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8.发明授权Photodiode-type ultraviolet sensor having a stacked structure and method for producing the same 有权具有层叠结构的光电二极管型紫外线传感器及其制造方法公开(公告)号：US09064987B2
公开(公告)日：2015-06-23
申请号：US14011884
申请日：2013-08-28
发明人： Kazutaka Nakamura
IPC分类号： H01L29/10 , H01L31/0232 , G01J1/02 , G01J1/42 , H01L31/0224 , H01L31/0296 , H01L31/18
CPC分类号： H01L31/02325 , G01J1/0252 , G01J1/429 , H01L31/022408 , H01L31/0296 , H01L31/18
摘要： An ultraviolet sensor having a p-type semiconductor layer containing, as its main constituent, a solid solution of NiO and ZnO, and an n-type semiconductor layer containing ZnO as its main constituent, which is joined to the p-type semiconductor layer such that a portion of the p-type semiconductor layer is exposed. An internal electrode is buried in the p-type semiconductor layer and opposed to the n-type semiconductor layer. Both ends of the internal electrode are exposed at both end surfaces of the p-type semiconductor layer, and first and second high-resistance layers composed of insulating materials cover one end of the internal electrode. The second high-resistance layer is obtained by diffusion of the insulating material from the first high-resistance layer into the p-type semiconductor layer. A first external electrode is connected to the other end of the internal electrode, and a second external electrode is connected to the n-type semiconductor layer.
摘要翻译： 具有p型半导体层的紫外线传感器，该p型半导体层以NiO和ZnO的固溶体为主要成分，以含有ZnO为主要成分的n型半导体层与p型半导体层接合， 使p型半导体层的一部分露出。 内部电极埋设在p型半导体层中并与n型半导体层相对。 内部电极的两端在p型半导体层的两端面露出，由绝缘材料构成的第一高电阻层和第二高电阻层覆盖内部电极的一端。 第二高电阻层是通过将绝缘材料从第一高电阻层扩散到p型半导体层而获得的。 第一外部电极连接到内部电极的另一端，第二外部电极连接到n型半导体层。
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公开(公告)号：US20130341619A1
公开(公告)日：2013-12-26
申请号：US14011884
申请日：2013-08-28
发明人： Kazutaka Nakamura
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/02325 , G01J1/0252 , G01J1/429 , H01L31/022408 , H01L31/0296 , H01L31/18
摘要： An ultraviolet sensor having a p-type semiconductor layer containing, as its main constituent, a solid solution of NiO and ZnO, and an n-type semiconductor layer containing ZnO as its main constituent, which is joined to the p-type semiconductor layer such that a portion of the p-type semiconductor layer is exposed. An internal electrode is buried in the p-type semiconductor layer and opposed to the n-type semiconductor layer. Both ends of the internal electrode are exposed at both end surfaces of the p-type semiconductor layer, and first and second high-resistance layers composed of insulating materials cover one end of the internal electrode. The second high-resistance layer is obtained by diffusion of the insulating material from the first high-resistance layer into the p-type semiconductor layer. A first external electrode is connected to the other end of the internal electrode, and a second external electrode is connected to the n-type semiconductor layer.
摘要翻译： 一种具有p型半导体层的紫外线传感器，其以作为主要成分的NiO和ZnO的固溶体和以ZnO为主要成分的n型半导体层作为其主要成分，与p型半导体层接合， 使p型半导体层的一部分露出。 内部电极埋设在p型半导体层中并与n型半导体层相对。 内部电极的两端在p型半导体层的两端面露出，由绝缘材料构成的第一高电阻层和第二高电阻层覆盖内部电极的一端。 第二高电阻层是通过将绝缘材料从第一高电阻层扩散到p型半导体层而获得的。 第一外部电极连接到内部电极的另一端，第二外部电极连接到n型半导体层。
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公开(公告)号：US11254426B2
公开(公告)日：2022-02-22
申请号：US16412678
申请日：2019-05-15
发明人： Kazutaka Nakamura , Masaki Hamamoto
IPC分类号： B64C33/02
摘要： A wing unit is used in a wing flapping apparatus to perform a swinging motion to thereby generate levitation force. The wing unit includes a nonwoven fabric that forms a wing surface; a frame body overlaid on the nonwoven fabric and extending along the wing surface; and a resin material disposed in a cavity included in the nonwoven fabric to integrate the nonwoven fabric and the frame body with each other. According to this configuration, a light-weight and high-strength wing unit that produces a suppressed wing flapping noise, a wing flapping apparatus including the wing unit, and a method of manufacturing the wing unit are provided.
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