- 专利标题: Capacitor, connection structure, and method for manufacturing capacitor
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申请号: US17666961申请日: 2022-02-08
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公开(公告)号: US11972909B2公开(公告)日: 2024-04-30
- 发明人: Kazutaka Nakamura , Kohei Shimada , Takeshi Furukawa , Shinji Otani , Akitomo Takahashi
- 申请人: Murata Manufacturing Co., Ltd.
- 申请人地址: JP Nagaokakyo
- 专利权人: MURATA MANUFACTURING CO., LTD.
- 当前专利权人: MURATA MANUFACTURING CO., LTD.
- 当前专利权人地址: JP Nagaokakyo
- 代理机构: Arentfox Shiff LLP
- 优先权: JP 19154763 2019.08.27
- 主分类号: H05K1/18
- IPC分类号: H05K1/18 ; H01G9/00 ; H01G9/04 ; H01G9/042 ; H01G9/15
摘要:
A capacitor disposed inside a multilayer substrate that includes a conductive pattern on a surface thereof and an anode portion having a first conductive metal member and a porous portion disposed on a surface of the first conductive metal member, a cathode portion, and a dielectric layer disposed between the anode portion and the cathode portion. Moreover, the anode portion is led out to a surface side of the multilayer substrate by a connection electrode including an alloy layer containing a metal forming the first conductive metal member and a conductive layer disposed on the alloy layer, and in which the connection electrode is connected to the conductive pattern formed on the surface of the multilayer substrate.
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