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公开(公告)号：US10468372B2
公开(公告)日：2019-11-05
申请号：US15857931
申请日：2017-12-29
IPC分类号： H01L23/02 , H01L23/00 , H01L23/053 , H01L25/07
摘要： According to the present invention, a semiconductor apparatus includes a semiconductor device, a case surrounding the semiconductor device, a spring terminal including a first connection portion extending to a top surface of the case, and a second connection portion provided on the top surface of the case and a control substrate provided on the second connection portion, wherein the first connection portion is connected to the semiconductor device, the second connection portion includes a first end connected to an end of the first connection portion, and a second end opposite to the first end, the second connection portion being a flat plate and having an elastic force using the first end as a supporting point, the second end contacts the control substrate with an elastic force, and the second connection portion has a constriction structure having a notch formed in a side surface along a longitudinal direction.
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公开(公告)号：US11581307B2
公开(公告)日：2023-02-14
申请号：US16791490
申请日：2020-02-14
发明人： Keisuke Eguchi , Rei Yoneyama , Nobuchika Aoki , Hiroki Hidaka
摘要： The object is to provide a semiconductor device that prevents a snapback operation and has excellent heat dissipation. The semiconductor device includes a semiconductor substrate, transistor portions, diode portions, a surface electrode, and external wiring. The transistor portions and the diode portions are provided in the semiconductor substrate and are arranged in one direction parallel with the surface of the semiconductor substrate. A bonding portion of the external wiring is connected to the surface electrode. The transistor portions and the diode portions are provided in a first region and a second region and alternately arranged in the one direction. A first transistor width and a first diode width in the first region are smaller than a width of the bonding portion. A second transistor width and a second diode width in the second region are larger than the width of the bonding portion.
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公开(公告)号：US11127696B2
公开(公告)日：2021-09-21
申请号：US16929338
申请日：2020-07-15
发明人： Haruhiko Murakami , Keisuke Eguchi
IPC分类号： H01L23/64 , H01L23/00 , H01L23/495
摘要： An object of the present invention is to provide a semiconductor device suppressing a ringing. A semiconductor device in an embodiment 1 includes an IGBT, an SBD connected to the IGBT in series, a PND connected to the IGBT in series and parallelly connected to the SBD, and an output electrode connected between the IGBT and the SBD and between the IGBT and the PND. An anode electrode of the PND is connected to the output electrode by the wiring via an anode electrode of the SBD.
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公开(公告)号：US11735490B2
公开(公告)日：2023-08-22
申请号：US17397344
申请日：2021-08-09
发明人： Nobuchika Aoki , Yoshitaka Kimura , Keisuke Eguchi
IPC分类号： H01L23/31 , H01L23/367 , H01L23/00 , H01L25/065
CPC分类号： H01L23/367 , H01L23/3142 , H01L24/32 , H01L24/48 , H01L25/0655 , H01L2224/32225 , H01L2224/48091 , H01L2224/48175
摘要： A semiconductor module includes: a dissipating metal plate including a recess provided on an upper surface; an insulating substrate provided on a bottom surface of the recess and including a circuit pattern; a semiconductor device provided on the insulating substrate and connected to the circuit pattern; a case bonded to a peripheral portion on the upper surface of the dissipating metal plate and surrounding the insulating substrate and the semiconductor device; a case electrode provided on the case; a wire connecting the semiconductor device and the case electrode; and a sealant provided in the case and sealing the insulating substrate, the semiconductor device, and the wire, wherein a sidewall of the recess has a taper.
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公开(公告)号：US11303203B2
公开(公告)日：2022-04-12
申请号：US17076172
申请日：2020-10-21
发明人： Keisuke Eguchi
IPC分类号： H02M1/44 , H02M1/088 , H02M7/5387 , H01L25/18
摘要： The object of the present disclosure is to suppress the conduction noise in a semiconductor device. A semiconductor device includes an inverter section being a full-bridge inverter, and a reflux section that short-circuits between output terminals U and V of the inverter section, in which impedances and are provided between each of freewheel diodes and of the upper arm and the output terminals U and V, and impedances and are provided between the freewheel diodes and of the lower arm and the input terminal N of in the inverter section, and the impedances to are greater than parasitic impedance of wiring assuming that IGBTs to and the output terminals U and V or the IGBTs and the input terminal N are connected only by the wiring.
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公开(公告)号：US11680979B2
公开(公告)日：2023-06-20
申请号：US17243448
申请日：2021-04-28
发明人： Hiroki Hidaka , Keisuke Eguchi , Nobuchika Aoki , Rei Yoneyama
CPC分类号： G01R31/2628 , G01K7/01 , G01R31/2632
摘要： An object is to provide a semiconductor device capable of accurately detecting a temperature of a transistor part and a temperature of the diode part, and improving an overheat protection function. A semiconductor device includes a semiconductor chip having a cell region made up of a plurality of cells including cells corresponding to a transistor part and a diode part, respectively, a temperature detection part detecting a temperature of the transistor part, and a temperature detection part detecting a temperature of the diode part, the temperature detection part is disposed in the cell corresponding to the transistor part, and the temperature detection part is disposed in the cell corresponding to the diode part.
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公开(公告)号：US10771053B2
公开(公告)日：2020-09-08
申请号：US16415643
申请日：2019-05-17
发明人： Keisuke Eguchi , Takahiro Inoue , Rei Yoneyama , Shiori Uota , Haruhiko Murakami
IPC分类号： H03K17/687 , H03K17/567 , H01L25/16 , H01L25/07 , H01L25/18
摘要： First and second switching regions include first and second gate electrodes respectively. Channel currents of the first and second switching regions are controlled according to electric charge amounts supplied by control signals input to the first and second gate electrodes respectively. The second switching region is connected in parallel with the first switching region. A control section outputs a first control signal for turning-on the first switching region to the first gate electrode and a second control signal for turning-on the second switching region to the second gate electrode. The control section stops outputting the second control signal after a first predetermined period elapses from a start of outputting the first and second control signals, and outputs the second control signal after a second predetermined period elapses from a stop of outputting the second control signal.
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公开(公告)号：US12080692B2
公开(公告)日：2024-09-03
申请号：US17578799
申请日：2022-01-19
发明人： Keisuke Eguchi , Hiroyuki Masumoto
IPC分类号： H01L25/16 , H01L21/48 , H01L23/00 , H01L23/373
CPC分类号： H01L25/16 , H01L21/4807 , H01L23/3735 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/48 , H01L24/73 , H01L2224/29147 , H01L2224/3003 , H01L2224/32225 , H01L2224/48225 , H01L2224/73265 , H01L2924/1203 , H01L2924/1205 , H01L2924/13055 , H01L2924/1426 , H01L2924/15787 , H01L2924/1579
摘要： A semiconductor device includes: a metal sheet; an insulating pattern provided on the metal sheet; a power circuit pattern and a signal circuit pattern that are provided on the insulating pattern; a power semiconductor chip mounted on the power circuit pattern; and a control semiconductor chip that is mounted on the signal circuit pattern and controls the power semiconductor chip. The power semiconductor chip is bonded to the power circuit pattern with a first die bonding material comprised of copper, and the control semiconductor chip is bonded to the signal circuit pattern with a second die bonding material.
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公开(公告)号：US11942411B2
公开(公告)日：2024-03-26
申请号：US17564940
申请日：2021-12-29
发明人： Takamasa Miyazaki , Keisuke Eguchi
IPC分类号： H01L23/498 , H01L23/00 , H01L25/11 , H02M7/00 , H02M7/5387
CPC分类号： H01L23/49844 , H01L24/48 , H01L25/115 , H02M7/003 , H01L2224/48225 , H02M7/5387
摘要： RC-IGBT chips and RC-IGBT chips correspond to a pair of adjacent RC-IGBT chips in an X direction between the RC-IGBT chips. The RC-IGBT chips satisfy a first arrangement condition in which the chips are separately arranged without a bonding point region and a bonding point region overlapping each other in a Y direction, and a second arrangement condition in which, in the Y direction, the chips are arranged to partially overlap so that a part of emitter electrodes excluding the bonding point region and the bonding point region overlap. The RC-IGBT chips also satisfy the first and second arrangement conditions described above.
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公开(公告)号：US11923673B2
公开(公告)日：2024-03-05
申请号：US17657002
申请日：2022-03-29
发明人： Keisuke Eguchi , Takamasa Miyazaki
CPC分类号： H02H3/08 , H02H1/0007
摘要： A semiconductor device includes: a switching device including a main portion and a current sensing portion for detecting a current value of the main portion; a control IC including a gate drive unit that drives the switching device; a sensing resistor connected between an emitter of the main portion and an emitter of the current sensing portion and formed inside the control IC; a comparator comparing a sense voltage applied to the sensing resistor with a reference voltage; and a shut-down circuit shutting down an energization of the switching device when the sense voltage exceeds the reference voltage, wherein the sense voltage is more than or equal to 1 V when the energization of the switching device is shut down.
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