Semiconductor device
摘要:
RC-IGBT chips and RC-IGBT chips correspond to a pair of adjacent RC-IGBT chips in an X direction between the RC-IGBT chips. The RC-IGBT chips satisfy a first arrangement condition in which the chips are separately arranged without a bonding point region and a bonding point region overlapping each other in a Y direction, and a second arrangement condition in which, in the Y direction, the chips are arranged to partially overlap so that a part of emitter electrodes excluding the bonding point region and the bonding point region overlap. The RC-IGBT chips also satisfy the first and second arrangement conditions described above.
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