- 专利标题: Semiconductor device
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申请号: US17564940申请日: 2021-12-29
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公开(公告)号: US11942411B2公开(公告)日: 2024-03-26
- 发明人: Takamasa Miyazaki , Keisuke Eguchi
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 优先权: JP 21062651 2021.04.01
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L23/00 ; H01L25/11 ; H02M7/00 ; H02M7/5387
摘要:
RC-IGBT chips and RC-IGBT chips correspond to a pair of adjacent RC-IGBT chips in an X direction between the RC-IGBT chips. The RC-IGBT chips satisfy a first arrangement condition in which the chips are separately arranged without a bonding point region and a bonding point region overlapping each other in a Y direction, and a second arrangement condition in which, in the Y direction, the chips are arranged to partially overlap so that a part of emitter electrodes excluding the bonding point region and the bonding point region overlap. The RC-IGBT chips also satisfy the first and second arrangement conditions described above.
公开/授权文献
- US20220319974A1 SEMICONDUCTOR DEVICE 公开/授权日:2022-10-06
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