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公开(公告)号：US10023976B2
公开(公告)日：2018-07-17
申请号：US15800128
申请日：2017-11-01
发明人： Yuuki Enatsu , Satoru Nagao , Shuichi Kubo , Hirotaka Ikeda , Kenji Fujito
摘要： A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10−4 rlu or less.
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2.发明申请公开(公告)号：US20180105953A1
公开(公告)日：2018-04-19
申请号：US15841985
申请日：2017-12-14
发明人： Yutaka MIKAWA , Hideo Namita , Hirotaka Ikeda , Kazunori Kamada , Hideo Fujisawa , Atsuhiko Kojima
CPC分类号： C30B29/406 , C30B7/105
摘要： An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.
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3.发明申请GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME, AND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME 审中-公开III族氮化物半导体基板及其制造方法及半导体发光装置及其制造方法公开(公告)号：US20130264606A1
公开(公告)日：2013-10-10
申请号：US13908428
申请日：2013-06-03
发明人： Shuichi KUBO , Hirotaka Ikeda , Hirohisa Itoh , Shinjiro Kadono
IPC分类号： H01L31/036 , H01L31/18
CPC分类号： H01L31/036 , C30B25/18 , C30B29/403 , H01L31/1856 , H01L33/0075
摘要： The problems addressed by the present invention lies in providing a Group III nitride semiconductor substrate having a principal plane on which high-quality crystals can be grown and also providing a method for producing a Group III nitride semiconductor substrate capable of obtaining a crystal which has few stacking faults and in which stacking faults in directions parallel to the polar plane in particular have been greatly suppressed. The problem is solved by means of a Group III nitride semiconductor substrate having a plane other than a C plane as a principal plane, wherein a ratio (W1/W2) of a tilt angle distribution W1 of the principal plane in the direction of a line of intersection between the principal plane and the C plane to a tilt angle distribution W2 of the principal plane in a direction orthogonal to the line of intersection is less than 1.
摘要翻译： 本发明所解决的问题在于提供一种具有能够生长高质量晶体的主平面的III族氮化物半导体衬底，并且还提供一种能够获得几乎没有晶体的晶体的III族氮化物半导体衬底的制造方法 堆垛层错，特别是与极板平行的方向上的堆垛层错被大大抑制。 该问题通过具有除了C面以外的平面作为主面的III族氮化物半导体衬底来解决，其中主面的倾斜角分布W1在线方向上的比（W1 / W2） 主平面和C平面之间的交叉点与主平面在与交叉线正交的方向上的倾斜角分布W2小于1。
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公开(公告)号：US11664428B2
公开(公告)日：2023-05-30
申请号：US17238468
申请日：2021-04-23
发明人： Satoru Nagao , Yusuke Tsukada , Kazunori Kamada , Shuichi Kubo , Hirotaka Ikeda , Kenji Fujito , Hideo Fujisawa , Yutaka Mikawa , Tae Mochizuki
CPC分类号： H01L29/2003 , C30B7/105 , C30B25/186 , C30B25/20 , C30B29/406 , H01L21/0254 , H01L21/02389 , C30B23/025
摘要： An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10−5 Å or less is observed.
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公开(公告)号：US10570530B2
公开(公告)日：2020-02-25
申请号：US15976891
申请日：2018-05-11
发明人： Yuuki Enatsu , Satoru Nagao , Shuichi Kubo , Hirotaka Ikeda , Kenji Fujito
摘要： A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10−4 rlu or less.
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公开(公告)号：US20200013860A1
公开(公告)日：2020-01-09
申请号：US16574224
申请日：2019-09-18
发明人： Satoru NAGAO , Yusuke Tsukada , Kazunori Kamada , Shuichi Kubo , Hirotaka Ikeda , Kenji Fujito , Hideo Fujisawa , Yutaka Mikawa , Tae Mochizuki
摘要： An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10−5 Å or less is observed.
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7.发明申请SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开自支撑GaN衬底，GaN晶体，用于生产GaN单晶的方法，以及用于制造半导体器件的方法公开(公告)号：US20160233306A1
公开(公告)日：2016-08-11
申请号：US15016409
申请日：2016-02-05
发明人： Satoru NAGAO , Yusuke Tsukada , Kazunori Kamada , Shuichi Kubo , Hirotaka Ikeda , Kenji Fujito , Hideo Fujisawa , Yutaka Mikawa , Tae Mochizuki
摘要： An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10−5 Å or less is observed.
摘要翻译： 目的是提供具有改进的尺寸和晶体质量的非极性或半极性GaN衬底。 独立的GaN衬底在主表面的法线和0度以上且20度以下的m轴之间具有角度，其中：当主面上的投影图像在c轴方向上的尺寸 在M平面上垂直投影为10mm以上; 并且当在主面和A面之间的交线上测量a轴长度时，截面长度为6mm以上且A轴长度变化在10.0×10分之内的低失真部 观察到10-5以下。
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公开(公告)号：US11670687B2
公开(公告)日：2023-06-06
申请号：US16906714
申请日：2020-06-19
发明人： Yusuke Tsukada , Shuichi Kubo , Kazunori Kamada , Hideo Fujisawa , Tatsuhiro Ohata , Hirotaka Ikeda , Hajime Matsumoto , Yutaka Mikawa
IPC分类号： H01L29/20 , C30B25/00 , C30B25/02 , C30B29/40 , H01L21/02 , H01L33/00 , H01L29/32 , C30B25/20 , H01L33/32 , H01L33/12
CPC分类号： H01L29/2003 , C30B25/00 , C30B25/02 , C30B25/20 , C30B29/406 , H01L21/0254 , H01L21/0262 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/02576 , H01L21/02609 , H01L21/02639 , H01L29/32 , H01L33/007 , H01L33/32 , H01L33/12
摘要： A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1×104 cm−2 or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 μm×250 μm in the first main plan is 1×106 cm−2 or less.
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公开(公告)号：US11038024B2
公开(公告)日：2021-06-15
申请号：US16444033
申请日：2019-06-18
发明人： Satoru Nagao , Yusuke Tsukada , Kazunori Kamada , Shuichi Kubo , Hirotaka Ikeda , Kenji Fujito , Hideo Fujisawa , Yutaka Mikawa , Tae Mochizuki
摘要： An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10−5 Å or less is observed.
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公开(公告)号：US11031475B2
公开(公告)日：2021-06-08
申请号：US16574224
申请日：2019-09-18
发明人： Satoru Nagao , Yusuke Tsukada , Kazunori Kamada , Shuichi Kubo , Hirotaka Ikeda , Kenji Fujito , Hideo Fujisawa , Yutaka Mikawa , Tae Mochizuki
摘要： An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10 −5 Å or less is observed.
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