公开(公告)号：US10023976B2

公开(公告)日：2018-07-17

申请号：US15800128

申请日：2017-11-01

申请人： Mitsubishi Chemical Corporation

发明人： Yuuki Enatsu ,  Satoru Nagao ,  Shuichi Kubo ,  Hirotaka Ikeda ,  Kenji Fujito

IPC分类号： C30B29/40 ,  H01L21/02 ,  H01L29/20 ,  C30B25/20 ,  C30B25/14 ,  C30B25/02

摘要： A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10−4 rlu or less.

公开(公告)号：US09840791B2

公开(公告)日：2017-12-12

申请号：US14502249

申请日：2014-09-30

申请人： MITSUBISHI CHEMICAL CORPORATION

发明人： Yuuki Enatsu ,  Satoru Nagao ,  Shuichi Kubo ,  Hirotaka Ikeda ,  Kenji Fujito

IPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/02 ,  C30B25/14 ,  C30B25/20 ,  H01L29/20

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/14 ,  C30B25/20 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/2003

摘要： A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10−4 rlu or less.

公开(公告)号：US11987903B2

公开(公告)日：2024-05-21

申请号：US17176237

申请日：2021-02-16

申请人： MITSUBISHI CHEMICAL CORPORATION

发明人： Kenji Iso ,  Tatsuya Takahashi ,  Tae Mochizuki ,  Yuuki Enatsu

IPC分类号： B32B3/00 ,  C23C16/34 ,  C30B25/20 ,  C30B29/40 ,  H01L21/02 ,  H01L29/04 ,  H01L29/20 ,  H01L29/36 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32

CPC分类号： C30B29/406 ,  C23C16/34 ,  C30B25/20 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02576 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/36 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/16 ,  H01L33/32

摘要： Provided is an n-type GaN crystal, in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. The n-type GaN crystal has two main surfaces, each having an area of 2 cm2 or larger. One of the two main surfaces can have a Ga polarity and can be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, the n-type GaN crystal can have a diameter of 20 mm or larger.

公开(公告)号：US20230203711A1

公开(公告)日：2023-06-29

申请号：US18171712

申请日：2023-02-21

申请人： MITSUBISHI CHEMICAL CORPORATION ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

发明人： Yusuke TSUKADA ,  Yuichi Oshima ,  Yuuki Enatsu

IPC分类号： C30B29/40 ,  C30B25/20 ,  C30B25/12

CPC分类号： C30B29/406 ,  C30B25/12 ,  C30B25/20

摘要： Provided are: a GaN crystal used in a substrate for a nitride semiconductor device having a horizontal device structure, such as a GaN-HEMT; and a GaN substrate used for the production of a nitride semiconductor device having a horizontal device structure, such as a GaN-HEMT. The GaN crystal and the GaN substrate each include a surface having an inclination of 10° or less from a (0001) crystal plane and an area of 5 cm2 or more, and have an Mn concentration of 1.0 × 1016 atoms/cm3 or higher but lower than 1.0 × 1019 atoms/cm3 and a total donor impurity concentration of lower than 5.0 × 1016 atoms/cm3.

公开(公告)号：US10570530B2

公开(公告)日：2020-02-25

申请号：US15976891

申请日：2018-05-11

申请人： Mitsubishi Chemical Corporation

发明人： Yuuki Enatsu ,  Satoru Nagao ,  Shuichi Kubo ,  Hirotaka Ikeda ,  Kenji Fujito

IPC分类号： C30B29/40 ,  H01L21/02 ,  C30B25/02 ,  C30B25/14 ,  C30B25/20 ,  H01L29/20

摘要： A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10−4 rlu or less.

公开(公告)号：US10224201B2

公开(公告)日：2019-03-05

申请号：US15675230

申请日：2017-08-11

申请人： MITSUBISHI CHEMICAL CORPORATION

发明人： Kenji Iso ,  Yuuki Enatsu ,  Hiromitsu Kimura

IPC分类号： H01L21/20 ,  H01L21/02 ,  C30B25/04 ,  C30B25/18 ,  C30B29/40

摘要： Provides is a C-plane GaN substrate which, although formed from a GaN crystal grown so that surface pits are generated, is free from any inversion domain, and moreover, has a low spiral dislocation density in a gallium polar surface. Provides is a C-plane GaN substrate wherein: the substrate comprises a plurality of facet growth areas each having a closed ring outline-shape on a gallium polar surface; the spiral dislocation density is less than 1×106 cm−2 anywhere on the gallium polar surface; and the substrate is free from any inversion domain. The C-plane GaN substrate may comprise a high dislocation density part having a dislocation density of more than 1×107 cm−2 and a low dislocation density part having a dislocation density of less than 1×106 cm−2 on the gallium polar surface.

公开(公告)号：US10177217B2

公开(公告)日：2019-01-08

申请号：US15681971

申请日：2017-08-21

申请人： MITSUBISHI CHEMICAL CORPORATION

发明人： Kenji Iso ,  Hiromitsu Kimura ,  Yuya Saito ,  Yuuki Enatsu

IPC分类号： H01L29/04 ,  C30B25/04 ,  C23C16/34 ,  H01L21/02 ,  H01L29/06 ,  C30B29/40

摘要： A C-plane GaN substrate only mildly restricts the shape and dimension of a nitride semiconductor device formed on the substrate. The variation of an off-angle on the main surface of the substrate is suppressed. In the C-plane GaN substrate: the substrate comprises a plurality of facet growth areas each having a closed ring outline-shape on the main surface; the number density of the facet growth area accompanied by a core among the plurality of facet growth areas is less than 5 cm−2 on the main surface; and, when any circular area of 4 cm diameter is selected from an area which is on the main surface and is distant by 5 mm or more from the outer peripheral edge of the substrate, the variation widths of an a-axis direction component and an m-axis direction component of an off-angle within the circular area is each 0.25 degrees or less.