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公开(公告)号：US10796904B2
公开(公告)日：2020-10-06
申请号：US16270124
申请日：2019-02-07
摘要： A conductive C-plane GaN substrate has a resistivity of 2×10−2 Ω·cm or less or an n-type carrier concentration of 1×1018 cm−3 or more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2°.
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公开(公告)号：US12107129B2
公开(公告)日：2024-10-01
申请号：US18302378
申请日：2023-04-18
发明人： Satoru Nagao , Yusuke Tsukada , Kazunori Kamada , Shuichi Kubo , Hirotaka Ikeda , Kenji Fujito , Hideo Fujisawa , Yutaka Mikawa , Tae Mochizuki
CPC分类号： H01L29/2003 , C30B7/105 , C30B25/186 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/0254 , C30B23/025
摘要： An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10−5 Å or less is observed.
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公开(公告)号：US10475887B2
公开(公告)日：2019-11-12
申请号：US15016409
申请日：2016-02-05
发明人： Satoru Nagao , Yusuke Tsukada , Kazunori Kamada , Shuichi Kubo , Hirotaka Ikeda , Kenji Fujito , Hideo Fujisawa , Yutaka Mikawa , Tae Mochizuki
摘要： An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10−5 Å or less is observed.
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公开(公告)号：US11591715B2
公开(公告)日：2023-02-28
申请号：US17223073
申请日：2021-04-06
摘要： A GaN single crystal having a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 μm×100 μm square, pit-free areas account for 80% or more of the plurality of sub-areas.
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公开(公告)号：US20210090886A1
公开(公告)日：2021-03-25
申请号：US17115972
申请日：2020-12-09
摘要： A conductive C-plane GaN substrate has a resistivity of 2×10−2 Ω·cm or less or an n-type carrier concentration of 1×1018 cm−3 or more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2°.
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公开(公告)号：US11987903B2
公开(公告)日：2024-05-21
申请号：US17176237
申请日：2021-02-16
发明人： Kenji Iso , Tatsuya Takahashi , Tae Mochizuki , Yuuki Enatsu
IPC分类号： B32B3/00 , C23C16/34 , C30B25/20 , C30B29/40 , H01L21/02 , H01L29/04 , H01L29/20 , H01L29/36 , H01L33/00 , H01L33/02 , H01L33/16 , H01L33/32
CPC分类号： C30B29/406 , C23C16/34 , C30B25/20 , H01L21/02389 , H01L21/0254 , H01L21/02576 , H01L29/045 , H01L29/2003 , H01L29/36 , H01L33/0075 , H01L33/025 , H01L33/16 , H01L33/32
摘要： Provided is an n-type GaN crystal, in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. The n-type GaN crystal has two main surfaces, each having an area of 2 cm2 or larger. One of the two main surfaces can have a Ga polarity and can be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, the n-type GaN crystal can have a diameter of 20 mm or larger.
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公开(公告)号：US11664428B2
公开(公告)日：2023-05-30
申请号：US17238468
申请日：2021-04-23
发明人： Satoru Nagao , Yusuke Tsukada , Kazunori Kamada , Shuichi Kubo , Hirotaka Ikeda , Kenji Fujito , Hideo Fujisawa , Yutaka Mikawa , Tae Mochizuki
CPC分类号： H01L29/2003 , C30B7/105 , C30B25/186 , C30B25/20 , C30B29/406 , H01L21/0254 , H01L21/02389 , C30B23/025
摘要： An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10−5 Å or less is observed.
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公开(公告)号：US10903072B2
公开(公告)日：2021-01-26
申请号：US16930121
申请日：2020-07-15
摘要： A conductive C-plane GaN substrate has a resistivity of 2×10−2 Ω·cm or less or an n-type carrier concentration of 1×1018 cm−3 or more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2°.
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公开(公告)号：US20200013860A1
公开(公告)日：2020-01-09
申请号：US16574224
申请日：2019-09-18
发明人： Satoru NAGAO , Yusuke Tsukada , Kazunori Kamada , Shuichi Kubo , Hirotaka Ikeda , Kenji Fujito , Hideo Fujisawa , Yutaka Mikawa , Tae Mochizuki
摘要： An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10−5 Å or less is observed.
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10.发明申请SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开自支撑GaN衬底，GaN晶体，用于生产GaN单晶的方法，以及用于制造半导体器件的方法公开(公告)号：US20160233306A1
公开(公告)日：2016-08-11
申请号：US15016409
申请日：2016-02-05
发明人： Satoru NAGAO , Yusuke Tsukada , Kazunori Kamada , Shuichi Kubo , Hirotaka Ikeda , Kenji Fujito , Hideo Fujisawa , Yutaka Mikawa , Tae Mochizuki
摘要： An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10−5 Å or less is observed.
摘要翻译： 目的是提供具有改进的尺寸和晶体质量的非极性或半极性GaN衬底。 独立的GaN衬底在主表面的法线和0度以上且20度以下的m轴之间具有角度，其中：当主面上的投影图像在c轴方向上的尺寸 在M平面上垂直投影为10mm以上; 并且当在主面和A面之间的交线上测量a轴长度时，截面长度为6mm以上且A轴长度变化在10.0×10分之内的低失真部 观察到10-5以下。
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