Vertical magnetic recording medium, method for producing the same and magnetic recorder
    1.
    发明申请
    Vertical magnetic recording medium, method for producing the same and magnetic recorder 审中-公开
    垂直磁记录介质,其制造方法和磁记录介质

    公开(公告)号:US20050227122A1

    公开(公告)日:2005-10-13

    申请号:US10511584

    申请日:2003-03-20

    CPC classification number: G11B5/7325 G11B5/66 G11B5/7379

    Abstract: A vertical magnetic recording medium exhibiting excellent noise characteristics in which magnetic interaction is reduced in a magnetic layer. The vertical magnetic recording medium (10) includes a nonmagnetic substrate (1), an underlying layer (2) formed directly or indirectly on the nonmagnetic substrate (1), and a magnetic layer (4) for recording magnetic information formed on the underlying layer (2), characterized in that the underlying layer (2) is composed of an alloy principally including two kinds of element, difference of standard free energy ΔG° for producing an oxide or a nitride of the both elements at room temperature is set not lower than 70 kJ/mol[O2 or N2], and crystal grains constituting the underlying layer (2) principally includes one of two elements having a higher ΔG°, and the grain boundary of the underlying layer (2) principally includes an oxide or a nitride of an element having a lower ΔG°.

    Abstract translation: 具有优异的噪声特性的垂直磁记录介质,其磁性层中的磁相互作用减小。 垂直磁记录介质(10)包括非磁性衬底(1),直接或间接形成在非磁性衬底(1)上的下层(2)和用于记录形成在下层上的磁信息的磁性层(4) (2),其特征在于,下层(2)由主要包含两种元素的合金构成,室温下用于制造两种元素的氧化物或氮化物的标准自由能差ΔG°的差设定为不低 构成下层(2)的晶粒主要包括具有较高ΔG°的两个元素中的一个,并且下层(2)的晶界主要包括氧化物或 具有较低DeltaG°的元素的氮化物。

    Magnetic recording medium, its production method, and magnetic recorder
    4.
    发明申请
    Magnetic recording medium, its production method, and magnetic recorder 审中-公开
    磁记录介质,其制作方法和磁记录仪

    公开(公告)号:US20050214584A1

    公开(公告)日:2005-09-29

    申请号:US10509616

    申请日:2003-03-20

    CPC classification number: G11B5/851 G11B5/66

    Abstract: A method for producing a magnetic recording medium having a flat surface and a strong exchange bias field, and excellent in thermal stability. The method for producing a magnetic recording medium related to the present invention comprising a nonmagnetic substrate 1, a metal underlayer 2, and a ferromagnetic metal layer 3 formed successively in multilayer. The method comprises a step of forming the ferromagnetic layer 3 where ferromagnetic films 3a, 3b and one or more nonmagnetic metal spacer layer 4 are alternately formed in a multilayer and a step of allowing at least the interface of the nonmagnetic metal spacer layers 4 to physically adsorb oxygen and/or nitrogen.

    Abstract translation: 一种具有平坦表面和强交换偏磁场的磁记录介质的制造方法,其热稳定性优异。 本发明涉及的磁记录介质的制造方法,其特征在于,包括依次层叠形成的非磁性基板1,金属底层2和强磁性金属层3。 该方法包括形成强磁性层3的步骤,其中铁磁膜3a,3b和一个或多个非磁性金属间隔层4在多层中交替形成,并且至少允许非磁性金属间隔层4的界面 物理吸附氧气和/或氮气。

    Magnetic recording medium and production method thereof and magnetic recording device
    5.
    发明授权
    Magnetic recording medium and production method thereof and magnetic recording device 失效
    磁记录介质及其制造方法和磁记录装置

    公开(公告)号:US06709775B1

    公开(公告)日:2004-03-23

    申请号:US09979851

    申请日:2001-11-28

    Abstract: A magnetic recording medium capable of suppressing the effects of thermal agitation and simultaneously reducing the average grain diameter and the standard deviation of magnetic crystal grains constituting a ferromagnetic metal film, without changing the film thickness of a metal under-layer or the film thickness of a ferromagnetic metal layer forming a recording layer, as well as a production method thereof, and a magnetic recording device. The magnetic recording medium includes a ferromagnetic metal layer of a cobalt based alloy formed on a base material with a metal underlayer having chromium as a major constituent disposed there between, wherein a seed layer having at least tungsten is provided between the base material and the metal under-layer, and the seed layer is an islands type film.

    Abstract translation: 一种能够抑制热搅拌的影响并同时降低构成铁磁性金属膜的磁性晶粒的平均粒径和标准偏差的磁记录介质,而不改变金属底层的膜厚度或膜厚度 形成记录层的铁磁性金属层及其制造方法以及磁记录装置。 磁记录介质包括在基材上形成的钴基合金的强磁性金属层,其中具有设置在其间的主要成分为铬的金属底层,其中至少具有钨的种子层设置在基材和金属之间 底层,种子层是岛状膜。

    Magnetoresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus
    8.
    发明授权
    Magnetoresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus 有权
    磁阻元件及其制造方法以及磁性多层膜制造装置

    公开(公告)号:US08174800B2

    公开(公告)日:2012-05-08

    申请号:US12114468

    申请日:2008-05-02

    Abstract: A magnetoresistive element includes an antiferromagnetic layer formed from a layer containing manganese, a layered magnetization fixed layer which includes a first magnetization fixed layer located over a side of the antiferromagnetic layer and formed from a layer containing a ferromagnetic material and a platinum group metal, a second magnetization fixed layer formed from a layer containing a ferromagnetic material, and a first nonmagnetic intermediate layer located between the first magnetization fixed layer and the second magnetization fixed layer, a magnetic free layer formed from a layer containing a ferromagnetic material, and a second nonmagnetic intermediate layer located between the layered magnetization fixed layer and the magnetic free layer.

    Abstract translation: 磁阻元件包括由包含锰的层形成的反铁磁层,层状磁化固定层,其包括位于反铁磁性层的一侧上并由含有铁磁材料和铂族金属的层形成的第一磁化固定层, 由含有铁磁材料的层形成的第二磁化固定层和位于第一磁化固定层和第二磁化固定层之间的第一非磁性中间层,由含有铁磁材料的层形成的无磁性层和第二非磁性层 位于层状磁化固定层和无磁性层之间的中间层。

    Method and Apparatus for Depositing a Magnetoresistive Multilayer Film
    9.
    发明申请
    Method and Apparatus for Depositing a Magnetoresistive Multilayer Film 有权
    沉积磁阻多层膜的方法和装置

    公开(公告)号:US20070169699A1

    公开(公告)日:2007-07-26

    申请号:US11688739

    申请日:2007-03-20

    Abstract: This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.

    Abstract translation: 本申请公开了一种用于制造具有这样的结构的磁阻多层膜的方法和装置,其中反铁磁性层,钉扎磁化层,非磁性间隔层和自由磁化层依次层压在基板上。 用于溅射的气体中加入氧气,通过溅射沉积反铁磁层的膜。 当用于溅射的气体中加入氧气时,通过溅射沉积介于衬底和反铁磁性层之间的额外层的膜。 用于反铁磁层的膜通过溅射沉积为氩气的气体混合物,并且使用比氩气更大原子序数的另一种气体。

    Magnetoresistance effect device
    10.
    发明申请
    Magnetoresistance effect device 有权
    磁阻效应器

    公开(公告)号:US20070070553A1

    公开(公告)日:2007-03-29

    申请号:US11527532

    申请日:2006-09-27

    CPC classification number: G01R33/093 B82Y25/00 G11B5/3906 G11C11/161

    Abstract: A magnetoresistance effect device has a fixed ferromagnetism layer, a free ferromagnetism layer, and a barrier layer sandwiched by these ferromagnetic layers. It is constituted so that CoFeB whose amount of addition of boron B (b: atomic %) is 21%≦b≦23% may be used for the free ferromagnetism layer. In the magnetic resistance effect element, a magnetostrictive constant does not change steeply near the magnetostrictive constant zero. A MR ratio is maintained to be high.

    Abstract translation: 磁阻效应器件具有固定的铁磁层,自由铁磁层和被这些铁磁层夹在中间的阻挡层。 其构成为使得硼B(b:原子%)的添加量为21%<= b <= 23%的CoFeB可用于游离铁磁层。 在磁阻效应元件中,磁致伸缩常数在磁致伸缩常数零点附近不会急剧变化。 MR比保持较高。

Patent Agency Ranking