公开(公告)号：US20240355395A1

公开(公告)日：2024-10-24

申请号：US18759032

申请日：2024-06-28

Applicant: Micron Technology, Inc.

Inventor： Marco Sforzin ,  Paolo Amato ,  Luca Barletta ,  Marco Pietro Ferrari ,  Antonino Favano

IPC: G11C16/10 ,  G11C16/12 ,  G11C16/34

CPC classification number: G11C16/102 ,  G11C16/12 ,  G11C16/3404

Abstract: The present disclosure includes apparatuses, methods, and systems for drift compensation for codewords in memory. An embodiment includes a memory device having an array of memory cells, and circuitry to sense a codeword stored in the array, determine a threshold voltage value of each cell of the codeword, sort the threshold voltage values, determine a second derivative value of a cell metric for a number of the cells of the codeword based on the threshold voltage value of that respective cell, the threshold voltage value immediately preceding the threshold voltage value of that respective cell in the sorted values, and a value proportional to a total quantity of the cells of the codeword, determine the cell metric for which the determined second derivative value has a greatest value, input the determined cell metric to a Pearson detector, and determine originally programmed data of the codeword using the Pearson detector.

公开(公告)号：US20240071486A1

公开(公告)日：2024-02-29

申请号：US17948520

申请日：2022-09-20

Applicant: Micron Technology, Inc.

Inventor： Marco Sforzin ,  Paolo Amato ,  Luca Barletta ,  Marco Pietro Ferrari ,  Antonino Favano

IPC: G11C11/56 ,  G11C5/14

CPC classification number: G11C11/5642 ,  G11C5/147 ,  G11C11/5628

Abstract: The present disclosure includes apparatuses, methods, and systems for drift compensation for codewords in memory. An embodiment includes a memory device having an array of memory cells, and circuitry to sense a codeword stored in the array, determine a derivative value of a cell metric for each cell of the codeword based on a threshold voltage of that respective cell, a mean of threshold voltage values of each cell of the codeword, and a value proportional to a total quantity of the cells of the codeword and a position of the threshold voltage value of that respective cell in the threshold voltage values of each cell of the codeword, determine the cell metric for which the determined derivative value changes from a first polarity to a second polarity, input the determined cell metric to a Pearson detector, and determine originally programmed data of the codeword using the Pearson detector.

公开(公告)号：US20240071487A1

公开(公告)日：2024-02-29

申请号：US17948582

申请日：2022-09-20

Applicant: Micron Technology, Inc.

Inventor： Marco Sforzin ,  Paolo Amato ,  Luca Barletta ,  Marco Pietro Ferrari ,  Antonino Favano

IPC: G11C11/56 ,  G11C11/4074 ,  G11C11/4099

CPC classification number: G11C11/5642 ,  G11C11/4074 ,  G11C11/4099

Abstract: Systems, methods, and apparatuses are provided for drift compensation for codewords in memory. A memory device comprises memory cells and circuitry configured to sense a codeword stored in the array of memory cells using a reference voltage and determine an amount by which to adjust the reference voltage used to sense the codeword based on an estimated weight of the original codeword, a mean of threshold voltage values of each memory cell of the sensed codeword, and a total quantity of memory cells of the sensed codeword. The circuitry can further be configured to adjust the reference voltage used to sense the codeword by the determined amount.

公开(公告)号：US20240071434A1

公开(公告)日：2024-02-29

申请号：US17948423

申请日：2022-09-20

Applicant: Micron Technology, Inc.

Inventor： Marco Sforzin ,  Paolo Amato ,  Luca Barletta ,  Marco Pietro Ferrari ,  Antonino Favano

IPC: G11C7/10 ,  G11C11/56

CPC classification number: G11C7/1063 ,  G11C7/1057 ,  G11C7/1069 ,  G11C11/5621

Abstract: Systems, methods, and apparatuses are provided for drift compensation for codewords in memory. A memory device comprises memory cells and circuitry configured to sense a codeword stored in the memory cells. The circuitry is further configured to determine a value of a cell metric of each memory cell of the sensed codeword, wherein the value of the cell metric of each of the memory cells is determined based on a summation of a threshold voltage value of each of the memory cells, a mean of the threshold voltage values of the memory cells, and a value proportional to the mean of the threshold voltage values of the memory cells. The circuitry is further configured to determine which cell metric of each of the memory cells has a lowest value, input that cell metric into a Pearson detector, and determine the originally programmed data of the codeword using the Pearson detector.

公开(公告)号：US20250046369A1

公开(公告)日：2025-02-06

申请号：US18924813

申请日：2024-10-23

Applicant: Micron Technology, Inc.

Inventor： Marco Sforzin ,  Paolo Amato ,  Luca Barletta ,  Marco Pietro Ferrari ,  Antonino Favano

IPC: G11C11/56 ,  G11C11/4074 ,  G11C11/4099

Abstract: Systems, methods, and apparatuses are provided for drift compensation for codewords in memory. A memory device comprises memory cells and circuitry configured to sense a codeword stored in the array of memory cells using a reference voltage and determine an amount by which to adjust the reference voltage used to sense the codeword based on an estimated weight of the original codeword, a mean of threshold voltage values of each memory cell of the sensed codeword, and a total quantity of memory cells of the sensed codeword. The circuitry can further be configured to adjust the reference voltage used to sense the codeword by the determined amount.

公开(公告)号：US20240428833A1

公开(公告)日：2024-12-26

申请号：US18827484

申请日：2024-09-06

Applicant: Micron Technology, Inc.

Inventor： Marco Sforzin ,  Paolo Amato ,  Luca Barletta ,  Marco Pietro Ferrari ,  Antonino Favano

IPC: G11C7/10 ,  G11C11/56

Abstract: Systems, methods, and apparatuses are provided for drift compensation for codewords in memory. A memory device comprises memory cells and circuitry configured to sense a codeword stored in the memory cells. The circuitry is further configured to determine a value of a cell metric of each memory cell of the sensed codeword, wherein the value of the cell metric of each of the memory cells is determined based on a summation of a threshold voltage value of each of the memory cells, a mean of the threshold voltage values of the memory cells, and a value proportional to the mean of the threshold voltage values of the memory cells. The circuitry is further configured to determine which cell metric of each of the memory cells has a lowest value, input that cell metric into a Pearson detector, and determine the originally programmed data of the codeword using the Pearson detector.

公开(公告)号：US12087391B2

公开(公告)日：2024-09-10

申请号：US17948423

申请日：2022-09-20

Applicant: Micron Technology, Inc.

Inventor： Marco Sforzin ,  Paolo Amato ,  Luca Barletta ,  Marco Pietro Ferrari ,  Antonino Favano

IPC: G11C7/10 ,  G11C11/56

CPC classification number: G11C7/1063 ,  G11C7/1057 ,  G11C7/1069 ,  G11C11/5621

Abstract: Systems, methods, and apparatuses are provided for drift compensation for codewords in memory. A memory device comprises memory cells and circuitry configured to sense a codeword stored in the memory cells. The circuitry is further configured to determine a value of a cell metric of each memory cell of the sensed codeword, wherein the value of the cell metric of each of the memory cells is determined based on a summation of a threshold voltage value of each of the memory cells, a mean of the threshold voltage values of the memory cells, and a value proportional to the mean of the threshold voltage values of the memory cells. The circuitry is further configured to determine which cell metric of each of the memory cells has a lowest value, input that cell metric into a Pearson detector, and determine the originally programmed data of the codeword using the Pearson detector.

公开(公告)号：US12136456B2

公开(公告)日：2024-11-05

申请号：US17948582

申请日：2022-09-20

Applicant: Micron Technology, Inc.

Inventor： Marco Sforzin ,  Paolo Amato ,  Luca Barletta ,  Marco Pietro Ferrari ,  Antonino Favano

IPC: G11C29/00 ,  G11C11/4074 ,  G11C11/4099 ,  G11C11/56

Abstract: Systems, methods, and apparatuses are provided for drift compensation for codewords in memory. A memory device comprises memory cells and circuitry configured to sense a codeword stored in the array of memory cells using a reference voltage and determine an amount by which to adjust the reference voltage used to sense the codeword based on an estimated weight of the original codeword, a mean of threshold voltage values of each memory cell of the sensed codeword, and a total quantity of memory cells of the sensed codeword. The circuitry can further be configured to adjust the reference voltage used to sense the codeword by the determined amount.

公开(公告)号：US12027212B2

公开(公告)日：2024-07-02

申请号：US17948556

申请日：2022-09-20

Applicant: Micron Technology, Inc.

Inventor： Marco Sforzin ,  Paolo Amato ,  Luca Barletta ,  Marco Pietro Ferrari ,  Antonino Favano

IPC: G11C16/10 ,  G11C16/12 ,  G11C16/34

CPC classification number: G11C16/102 ,  G11C16/12 ,  G11C16/3404

Abstract: The present disclosure includes apparatuses, methods, and systems for drift compensation for codewords in memory. An embodiment includes a memory device having an array of memory cells, and circuitry to sense a codeword stored in the array, determine a threshold voltage value of each cell of the codeword, sort the threshold voltage values, determine a second derivative value of a cell metric for a number of the cells of the codeword based on the threshold voltage value of that respective cell, the threshold voltage value immediately preceding the threshold voltage value of that respective cell in the sorted values, and a value proportional to a total quantity of the cells of the codeword, determine the cell metric for which the determined second derivative value has a greatest value, input the determined cell metric to a Pearson detector, and determine originally programmed data of the codeword using the Pearson detector.

公开(公告)号：US20240071511A1

公开(公告)日：2024-02-29

申请号：US17948556

申请日：2022-09-20

Applicant: Micron Technology, Inc.

Inventor： Marco Sforzin ,  Paolo Amato ,  Luca Barletta ,  Marco Pietro Ferrari ,  Antonino Favano

IPC: G11C16/10 ,  G11C16/12 ,  G11C16/34

CPC classification number: G11C16/102 ,  G11C16/12 ,  G11C16/3404

Abstract: The present disclosure includes apparatuses, methods, and systems for drift compensation for codewords in memory. An embodiment includes a memory device having an array of memory cells, and circuitry to sense a codeword stored in the array, determine a threshold voltage value of each cell of the codeword, sort the threshold voltage values, determine a second derivative value of a cell metric for a number of the cells of the codeword based on the threshold voltage value of that respective cell, the threshold voltage value immediately preceding the threshold voltage value of that respective cell in the sorted values, and a value proportional to a total quantity of the cells of the codeword, determine the cell metric for which the determined second derivative value has a greatest value, input the determined cell metric to a Pearson detector, and determine originally programmed data of the codeword using the Pearson detector.