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    Method for reducing tip-to-tip spacing between lines
    2.
    发明授权
    Method for reducing tip-to-tip spacing between lines 有权
    减少线间距尖端间距的方法

    公开(公告)号：US08361704B2

    公开(公告)日：2013-01-29

    申请号：US12352051

    申请日：2009-01-12

    申请人： Matthew E. Colburn ,  Wai-kin Li ,  Haining S. Yang

    发明人： Matthew E. Colburn ,  Wai-kin Li ,  Haining S. Yang

    IPC分类号： G03F7/20

    CPC分类号： G03F7/40 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139

    摘要： This invention provides a method for reducing tip-to-tip spacing between lines using a combination of photolithographic and copolymer self-assembling lithographic techniques. A mask layer is first formed over a substrate with a line structure. A trench opening of a width d is created in the mask layer. A layer of a self-assembling block copolymer is then applied over the mask layer. The block copolymer layer is annealed to form a single unit polymer block of a width or a diameter w which is smaller than d inside the trench opening. The single unit polymer block is selectively removed to form a single opening of a width or a diameter w inside the trench opening. An etch transfer process is performed using the single opening as a mask to form an opening in the line structure in the substrate.

    摘要翻译： 本发明提供了使用光刻和共聚物自组装光刻技术的组合来减少线之间的尖端到尖端间隔的方法。 首先在具有线结构的衬底上形成掩模层。 在掩模层中形成宽度为d的沟槽开口。 然后将一层自组装嵌段共聚物施加在掩模层上。 对嵌段共聚物层进行退火以在沟槽开口内形成宽度或直径w小于d的单一单元聚合物嵌段。 选择性地去除单个单元聚合物嵌段以在沟槽开口内形成宽度或直径w的单个开口。 使用单个开口作为掩模进行蚀刻转印处理，以在基板中的线结构中形成开口。

    METHOD AND STRUCTURE FOR RELIEVING TRANSISTOR PERFORMANCE DEGRADATION DUE TO SHALLOW TRENCH ISOLATION INDUCED STRESS
    6.
    发明申请
    METHOD AND STRUCTURE FOR RELIEVING TRANSISTOR PERFORMANCE DEGRADATION DUE TO SHALLOW TRENCH ISOLATION INDUCED STRESS 有权
    用于缓解晶体管分离诱导应力的晶体管性能降解的方法和结构

    公开(公告)号：US20090206442A1

    公开(公告)日：2009-08-20

    申请号：US12033322

    申请日：2008-02-19

    申请人： Ramachandra Divakaruni ,  Wai-Kin Li ,  Haining S. Yang

    发明人： Ramachandra Divakaruni ,  Wai-Kin Li ,  Haining S. Yang

    IPC分类号： H01L21/762 ,  H01L23/58

    CPC分类号： H01L21/76232

    摘要： A method of forming shallow trench isolation (STI) regions for semiconductor devices, the method including defining STI trench openings within a semiconductor substrate; filling the STI trench openings with an initial trench fill material; defining a pattern of nano-scale openings over the substrate, at locations corresponding to the STI trench openings; transferring the pattern of nano-scale openings into the trench fill material so as to define a plurality of vertically oriented nano-scale openings in the trench fill material; and plugging upper portions of the nano-scale openings with additional trench fill material, thereby defining porous STI regions in the substrate.

    摘要翻译： 一种形成用于半导体器件的浅沟槽隔离（STI）区域的方法，所述方法包括在半导体衬底内限定STI沟槽开口; 用初始沟槽填充材料填充STI沟槽开口; 在对应于STI沟槽开口的位置处限定衬底上的纳米尺度开口的图案; 将纳米级开口的图案转移到沟槽填充材料中，以便在沟槽填充材料中限定多个垂直取向的纳米级开口; 并用另外的沟槽填充材料堵塞纳米级开口的上部，从而在衬底中限定多孔STI区域。

    ELECTRICAL FUSE HAVING SUBLITHOGRAPHIC CAVITIES THEREUPON
    7.
    发明申请
    ELECTRICAL FUSE HAVING SUBLITHOGRAPHIC CAVITIES THEREUPON 有权
    电子保险丝具有相关的地理位置

    公开(公告)号：US20090026574A1

    公开(公告)日：2009-01-29

    申请号：US11828718

    申请日：2007-07-26

    申请人： Deok-kee Kim ,  Wai-Kin Li ,  Haining S. Yang

    发明人： Deok-kee Kim ,  Wai-Kin Li ,  Haining S. Yang

    IPC分类号： H01L23/525 ,  H01L21/768

    CPC分类号： H01L23/5256 ,  H01L21/7682 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T29/49107 ,  H01L2924/00

    摘要： An electrical fuse and a first dielectric layer thereupon are formed on a semiconductor substrate. Self-assembling block copolymers containing two or more different polymeric block components are applied into a recessed region surrounded by a dielectric template layer. The self-assembling block copolymers are then annealed to form a pattern of multiple circles having a sublithographic diameter. The pattern of multiple circles is transferred into the first dielectric layer by a reactive ion etch, wherein the portion of the first dielectric layer above the fuselink has a honeycomb pattern comprising multiple circular cylindrical holes. A second dielectric layer is formed over the circular cylindrical holes by a non-conformal chemical vapor deposition and sublithographic cavities are formed on the fuselink. The sublithographic cavities provide enhanced thermal insulation relative to dielectric materials to the fuselink so that the electrical fuse may be programmed with less programming current.

    摘要翻译： 在半导体衬底上形成电熔丝和第一电介质层。 含有两个或更多个不同聚合物嵌段组分的自组装嵌段共聚物被施加到由电介质模板层包围的凹陷区域中。 然后将自组装嵌段共聚物退火以形成具有亚光刻直径的多个圆的图案。 通过反应离子蚀刻将多个圆圈的图案转移到第一介电层中，其中，在熔体上方的第一介电层的部分具有包括多个圆柱形孔的蜂窝图案。 通过非共形化学气相沉积在圆柱形孔上方形成第二介电层，并在融合体上形成亚光刻腔。 亚光刻腔相对于介质材料提供与熔丝相关的增强的热绝缘，使得电熔丝可以用较少的编程电流编程。

    Patterning method using a combination of photolithography and copolymer self-assemblying lithography techniques
    8.
    发明授权
    Patterning method using a combination of photolithography and copolymer self-assemblying lithography techniques 有权
    使用光刻和共聚物自组装光刻技术的组合的图案化方法

    公开(公告)号：US08083958B2

    公开(公告)日：2011-12-27

    申请号：US11950600

    申请日：2007-12-05

    申请人： Wai-Kin Li ,  Haining S. Yang

    发明人： Wai-Kin Li ,  Haining S. Yang

    IPC分类号： B82Y40/00 ,  H01L21/302

    CPC分类号： H01L21/0337 ,  G03F7/0035 ,  H01L21/0273 ,  H01L21/0334 ,  Y10S438/942 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/895

    摘要： Disclosed are embodiments of a lithographic patterning method that incorporates a combination of photolithography and self-assembling copolymer lithography techniques in order to create, on a substrate, a grid-pattern mask having multiple cells, each with at least one sub-50 nm dimension. The combination of different lithographic techniques further allows for precise registration and overlay of the individual grid-pattern cells with corresponding structures within the substrate. The resulting grid-pattern mask can then be used, in conjunction with directional etch and other processes, to extend the cell patterns into the substrate and, thereby form openings, with at least one sub-50 nm dimension, landing on corresponding in-substrate structures. Once the openings are formed, additional structures can be formed within the openings.

    摘要翻译： 公开了包含光刻和自组装共聚物光刻技术的组合的光刻图案化方法的实施例，以便在衬底上形成具有多个单元的栅格图案掩模，每个栅格图案掩模具有至少一个小于50nm的尺寸。 不同光刻技术的组合进一步允许单个栅格图案单元与衬底内的对应结构的精确配准和覆盖。 然后可以结合定向蚀刻和其它工艺将所得到的网格图案掩模用于将单元图形延伸到基底中，从而形成具有至少一个次50nm尺寸的开口，着陆在相应的基底 结构。 一旦形成开口，可以在开口内形成附加结构。

    Method and structure for relieving transistor performance degradation due to shallow trench isolation induced stress
    9.
    发明授权
    Method and structure for relieving transistor performance degradation due to shallow trench isolation induced stress 有权
    由于浅沟槽隔离引起的应力，缓解晶体管性能退化的方法和结构

    公开(公告)号：US07871895B2

    公开(公告)日：2011-01-18

    申请号：US12033322

    申请日：2008-02-19

    申请人： Ramachandra Divakaruni ,  Wai-Kin Li ,  Haining S. Yang

    发明人： Ramachandra Divakaruni ,  Wai-Kin Li ,  Haining S. Yang

    IPC分类号： H01L21/76 ,  H01L21/336

    CPC分类号： H01L21/76232

    摘要： A method of forming shallow trench isolation (STI) regions for semiconductor devices, the method including defining STI trench openings within a semiconductor substrate; filling the STI trench openings with an initial trench fill material; defining a pattern of nano-scale openings over the substrate, at locations corresponding to the STI trench openings; transferring the pattern of nano-scale openings into the trench fill material so as to define a plurality of vertically oriented nano-scale openings in the trench fill material; and plugging upper portions of the nano-scale openings with additional trench fill material, thereby defining porous STI regions in the substrate.

    摘要翻译： 一种形成用于半导体器件的浅沟槽隔离（STI）区域的方法，所述方法包括在半导体衬底内限定STI沟槽开口; 用初始沟槽填充材料填充STI沟槽开口; 在对应于STI沟槽开口的位置处限定衬底上的纳米尺度开口的图案; 将纳米级开口的图案转移到沟槽填充材料中，以便在沟槽填充材料中限定多个垂直取向的纳米级开口; 并用另外的沟槽填充材料堵塞纳米级开口的上部，从而在衬底中限定多孔STI区域。

    Electrical fuse having a cavity thereupon
    10.
    发明授权
    Electrical fuse having a cavity thereupon 有权
    电熔丝在其上具有腔体

    公开(公告)号：US07825490B2

    公开(公告)日：2010-11-02

    申请号：US11779424

    申请日：2007-07-18

    申请人： Deok-kee Kim ,  Wai-Kin Li ,  Haining S. Yang

    发明人： Deok-kee Kim ,  Wai-Kin Li ,  Haining S. Yang

    IPC分类号： H01L29/93

    CPC分类号： G11C17/16 ,  H01L21/76229 ,  H01L23/5256 ,  H01L27/112 ,  H01L27/11206 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： An electrical fuse is formed on a semiconductor substrate and a first dielectric layer is formed over the electrical fuse. At least one opening is formed by lithographic methods and a reactive ion etch in the first dielectric layer down to a top surface of the electrical fuse or down to shallow trench isolation. A second dielectric layer is deposited by a non-conformal deposition. Thickness of the second dielectric layer on the sidewalls of the at least one opening increases with height so that at least one cavity encapsulated by the second dielectric layer is formed in the at least one opening. The at least one cavity provides enhanced thermal isolation of the electrical fuse since the cavity provides superior thermal isolation than a dielectric material.

    摘要翻译： 在半导体衬底上形成电熔丝，并在电熔丝上方形成第一电介质层。 至少一个开口通过光刻方法和第一电介质层中的反应离子蚀刻形成至电熔丝的顶表面或者至浅沟槽隔离。 通过非共形沉积沉积第二介电层。 至少一个开口的侧壁上的第二电介质层的厚度随着高度而增加，使得在至少一个开口中形成由第二介电层包封的至少一个空腔。 至少一个空腔提供了电熔丝的增强的热隔离，因为空腔提供比电介质材料更好的热隔离。