公开(公告)号：US08120426B1

公开(公告)日：2012-02-21

申请号：US12820807

申请日：2010-06-22

申请人： Marcus Granger-Jones ,  Jim Connelly

发明人： Marcus Granger-Jones ,  Jim Connelly

IPC分类号： H03F3/45

CPC分类号： H03F1/0277 ,  H03F1/3205 ,  H03F3/189 ,  H03F3/211 ,  H03F3/245 ,  H03F3/45183 ,  H03F3/4565 ,  H03F3/72 ,  H03F2200/171 ,  H03F2200/294 ,  H03F2200/336 ,  H03F2200/405 ,  H03F2203/21136 ,  H03F2203/21142 ,  H03F2203/45418 ,  H03F2203/45434 ,  H03F2203/45594 ,  H03F2203/45686 ,  H03F2203/45702 ,  H03F2203/45726

摘要： A transconductor stage is a linearized class AB amplifier having embedded noise filtering that enables a biasing of an in-phase/quadrature (I/Q) modulator core with a low quiescent current. Linearization of the transconductor stage is increased by introducing a small amount of negative feedback into the transconductor stage via a feedback circuitry and an error amplifier. A dominant open loop pole in a path between the error amplifier and an output stage of the transconductor stage forms a dominant pole low-pass filter. A low-pass filter transfer function created when a loop including the feedback circuitry is closed attenuates noise introduced by baseband circuitry that supplies baseband signals to the transconductor stage. A master output stage biases a plurality of slave output stages that are in parallel with the master output stage. Each slave output stage is coupled to an individual modulator core such as a Gilbert cell mixer core.

摘要翻译： 跨导级是具有嵌入式噪声滤波的线性化AB类放大器，其能够以低静态电流偏置同相/正交（I / Q）调制器核。 通过经由反馈电路和误差放大器将少量的负反馈引入跨导级来增加跨导级的线性化。 误差放大器与跨导级级输出级之间的路径中的主要开环极点形成主极低通滤波器。 当包括反馈电路的环路闭合时产生的低通滤波器传递函数会衰减由基带电路引入的噪声，该基带电路将基带信号提供给跨导级。 主输出级偏置与主输出级并联的多个从输出级。 每个从输出级耦合到诸如吉尔伯特单元混频器核心的单独调制器核心。

公开(公告)号：US09628068B2

公开(公告)日：2017-04-18

申请号：US13095302

申请日：2011-04-27

申请人： Marcus Granger-Jones ,  Christian Rye Iversen

发明人： Marcus Granger-Jones ,  Christian Rye Iversen

IPC分类号： H03K17/10

摘要： Described are embodiments of stacked field effect transistor (FET) switch having a plurality of FET devices coupled in series to form an FET device stack. To prevent the FET device stack from being turned on during large signal conditions, one or more decoupling paths are provided and are configured to pass the time-variant input signal during the open state of the FET device stack. The first decoupling path may include a capacitor, a transistor, or the like, that passes the time-variant input signal by, for example, presenting a low impedance to the time-variant input signal during the open state. The decoupling paths may be connected so that the time-variant input signal bypasses a portion of the FET device stack during the open state.

公开(公告)号：US09231528B2

公开(公告)日：2016-01-05

申请号：US13049215

申请日：2011-03-16

申请人： Marcus Granger-Jones ,  Wayne Kennan

发明人： Marcus Granger-Jones ,  Wayne Kennan

IPC分类号： H03F3/04 ,  H03F1/30

CPC分类号： H03F1/302

摘要： In one embodiment, an amplification device has a temperature differential sensing circuit that reduces a local thermal memory effect. The amplification device may include an amplification circuit and biasing circuitry. The amplification device is operable to receive an input signal and generate and amplified output signal. The biasing circuitry generates a biasing signal that sets the quiescent operating level of the amplified output signal. The temperature differential sensing circuit provides a bias level adjustment signal that adjusts the biasing signal to maintain the quiescent operating level of the amplified output signal at a desired level.

摘要翻译： 在一个实施例中，放大装置具有降低局部热记忆效应的温差传感电路。 放大装置可以包括放大电路和偏置电路。 放大装置可操作以接收输入信号并产生和放大的输出信号。 偏置电路产生设置放大的输出信号的静态工作电平的偏置信号。 温度差动检测电路提供偏置电平调整信号，该信号调节偏置信号，以将放大的输出信号的静态工作电平维持在所需的电平。

公开(公告)号：US20110260774A1

公开(公告)日：2011-10-27

申请号：US13095410

申请日：2011-04-27

申请人： Marcus Granger-Jones ,  Christian Rye Iversen

发明人： Marcus Granger-Jones ,  Christian Rye Iversen

IPC分类号： H03K17/687

CPC分类号： H03K17/102

摘要： Described are embodiments of stacked field effect transistor (FET) switch having a plurality of FET devices coupled in series to form an FET device stack. To prevent the FET device stack from being turned on during large signal conditions, a first decoupling path and a second decoupling path are provided for the first FET device and the last FET device in the FET device stack. Both decoupling paths are configured to pass a time-variant input signal during the open state. The first decoupling path may be coupled from the drain contact of the first FET device to the gate contact or the source contact. The second decoupling path may be coupled from the source contact of the last FET device to the gate contact or drain contact. The time-variant input signal bypasses the FET device stack through the first and second decoupling paths during the open state.

摘要翻译： 描述了具有串联耦合以形成FET器件堆叠的多个FET器件的堆叠场效应晶体管（FET）开关的实施例。 为了防止在大信号状态期间FET器件堆叠被导通，为FET器件堆叠中的第一FET器件和最后一个FET器件提供第一去耦路径和第二去耦路径。 两个去耦路径被配置为在打开状态期间传递时变输入信号。 第一去耦路径可以从第一FET器件的漏极触点耦合到栅极触点或源极触点。 第二去耦路径可以从最后的FET器件的源极接触耦合到栅极接触或漏极接触。 在打开状态期间，时变输入信号通过第一和第二去耦路径绕过FET器件堆叠。

公开(公告)号：US10056895B2

公开(公告)日：2018-08-21

申请号：US13095410

申请日：2011-04-27

申请人： Marcus Granger-Jones ,  Christian Rye Iversen

发明人： Marcus Granger-Jones ,  Christian Rye Iversen

IPC分类号： H03K17/10 ,  H03K17/687 ,  H03K17/693

CPC分类号： H03K17/102

摘要： Described are embodiments of stacked field effect transistor (FET) switch having a plurality of FET devices coupled in series to form an FET device stack. To prevent the FET device stack from being turned on during large signal conditions, a first decoupling path and a second decoupling path are provided for the first FET device and the last FET device in the FET device stack. Both decoupling paths are configured to pass a time-variant input signal during the open state. The first decoupling path may be coupled from the drain contact of the first FET device to the gate contact or the source contact. The second decoupling path may be coupled from the source contact of the last FET device to the gate contact or drain contact. The time-variant input signal bypasses the FET device stack through the first and second decoupling paths during the open state.

公开(公告)号：US09673802B2

公开(公告)日：2017-06-06

申请号：US13095302

申请日：2011-04-27

申请人： Marcus Granger-Jones ,  Christian Rye Iversen

发明人： Marcus Granger-Jones ,  Christian Rye Iversen

IPC分类号： H03K17/10

CPC分类号： H03K17/102

摘要： Described are embodiments of stacked field effect transistor (FET) switch having a plurality of FET devices coupled in series to form an FET device stack. To prevent the FET device stack from being turned on during large signal conditions, one or more decoupling paths are provided and are configured to pass the time-variant input signal during the open state of the FET device stack. The first decoupling path may include a capacitor, a transistor, or the like, that passes the time-variant input signal by, for example, presenting a low impedance to the time-variant input signal during the open state. The decoupling paths may be connected so that the time-variant input signal bypasses a portion of the FET device stack during the open state.

公开(公告)号：US09100046B2

公开(公告)日：2015-08-04

申请号：US13589037

申请日：2012-08-17

申请人： Marcus Granger-Jones

发明人： Marcus Granger-Jones

IPC分类号： H01P1/22 ,  H03M1/68 ,  H03M1/80

CPC分类号： H03M1/682 ,  H01P1/22 ,  H03H7/25 ,  H03M1/806 ,  H03M1/808

摘要： A digital step attenuator with thermometer encoded attenuator stages is disclosed. In one embodiment, Embodiments disclosed in the detailed description may include a digital step attenuator, programmable thermometer encoded attenuator stages, the digital step attenuator may include a cascade of programmable thermometer encoded attenuator stages. Each stage may be provided by a programmable impedance array including a plurality of impedances arranged in parallel. The impedance of each of the plurality of each stage may change monotonically by switchably inserting or removing one of the plurality of impedances in the arrays. The control circuit may govern the attenuation level of each of the thermometer encoded accumulator stages as a function of a thermometric codeword, which controls the switches in the arrays.

摘要翻译： 公开了一种具有温度计编码衰减器级的数字步进衰减器。 在一个实施例中，在详细描述中公开的实施例可以包括数字步进衰减器，可编程温度计编码的衰减器级，数字步进衰减器可以包括级联的可编程温度计编码衰减器级。 每个级可以由包括并联布置的多个阻抗的可编程阻抗阵列提供。 多个每个级中的每一个的阻抗可以通过可切换地插入或去除阵列中的多个阻抗中的一个来单调改变。 控制电路可以将温度计编码的累加器级中的每一个的衰减水平作为控制阵列中的开关的测温代码字的函数。

公开(公告)号：US08970278B2

公开(公告)日：2015-03-03

申请号：US13095357

申请日：2011-04-27

申请人： Marcus Granger-Jones ,  Christian Rye Iversen

发明人： Marcus Granger-Jones ,  Christian Rye Iversen

IPC分类号： H03L5/00 ,  H03K17/10

CPC分类号： H03K17/102

摘要： Described are embodiments of stacked field effect transistor (FET) switch having a plurality of FET devices coupled in series to form an FET device stack. A control circuit provides biasing voltages to the gate, source, and drain contacts of each of the plurality of FET devices to switch the FET device stack to and from a closed state and an open state. In the open state, the gate contacts of each of the plurality of FET devices are biased by the control circuit at the second voltage. To prevent activation in the open state, the control circuit biases the drain contacts and source contacts of each of the plurality of FET devices at the first voltage. The first voltage is positive relative to a reference voltage, such as ground, while the second voltage is non-negative relative to the reference voltage but less than the first voltage.

摘要翻译： 描述了具有串联耦合以形成FET器件堆叠的多个FET器件的堆叠场效应晶体管（FET）开关的实施例。 控制电路向多个FET器件中的每一个FET器件的栅极，源极和漏极触点提供偏置电压，以将FET器件堆叠切换到闭合状态和断开状态。 在打开状态下，多个FET器件中的每一个的栅极触点被第二电压的控制电路偏置。 为了防止在打开状态下的激活，控制电路以第一电压偏置多个FET器件中的每一个的漏极触点和源极触点。 第一电压相对于参考电压（例如接地）为正，而第二电压相对于参考电压为非负，但小于第一电压。

公开(公告)号：US20130241666A1

公开(公告)日：2013-09-19

申请号：US13606139

申请日：2012-09-07

申请人： Marcus Granger-Jones ,  Nadim Khlat

发明人： Marcus Granger-Jones ,  Nadim Khlat

IPC分类号： H01P1/10

CPC分类号： H01P1/15 ,  H01P1/10 ,  H04B1/006 ,  H04B1/1027 ,  H04B1/109 ,  H04B2001/1054 ,  H04B2001/1063

摘要： A band switch with a switchable notch for receive carrier aggregation is disclosed. The band switch has at least one input and an output with at least one series switch coupled between the at least one input and the output. The at least one series switch is adapted to selectively couple the input to the output in response to a first control signal. The band switch also includes at least one shunt switch coupled between the at least one input and a voltage node. The at least one shunt switch is adapted to selectively couple the at least one input to the voltage node in response to a second control signal. In addition, at least one notch filter is selectively coupled to the output in a shunt configuration, wherein the at least one notch filter is configured to attenuate signals within a stop band to attenuate harmonics and distortion.

摘要翻译： 公开了具有用于接收载波聚合的可切换陷波的带开关。 带开关具有至少一个输入和输出，其中至少一个串联开关耦合在至少一个输入和输出之间。 至少一个串联开关适于响应于第一控制信号选择性地将输入耦合到输出。 带开关还包括耦合在至少一个输入端和电压节点之间的至少一个并联开关。 所述至少一个并联开关适于响应于第二控制信号选择性地将所述至少一个输入耦合到所述电压节点。 此外，至少一个陷波滤波器在分流配置中选择性地耦合到输出，其中至少一个陷波滤波器被配置为衰减阻带内的信号以衰减谐波和失真。

公开(公告)号：US20120094623A1

公开(公告)日：2012-04-19

申请号：US13171897

申请日：2011-06-29

申请人： Nadim Khlat ,  Marcus Granger-Jones

发明人： Nadim Khlat ,  Marcus Granger-Jones

IPC分类号： H04B1/18

CPC分类号： H04B1/18

摘要： An antenna tuner unit (ATU) that provides broadband tuning is disclosed. The disclosed ATU includes a radio frequency (RF) switch circuit having an N number of switch inputs, wherein N is a natural number equal to 2 or greater. An N number of reactance elements are coupled in series between an RF input and one of the N number of switch inputs. Taps between adjacent pairs of the N number of reactance elements, wherein each of the taps is coupled to a corresponding one of the N number of switch inputs. The ATU further includes a capacitive element for each of the taps, wherein each capacitive element is coupled between a corresponding one of the taps and a voltage node. In at least one embodiment, each of the capacitive elements is made up of a programmable capacitor array.

摘要翻译： 公开了提供宽带调谐的天线调谐器单元（ATU）。 所公开的ATU包括具有N个开关输入的射频（RF）开关电路，其中N是等于2或更大的自然数。 N个电抗元件在RF输入和N个开关输入中的一个之间串联耦合。 在N个电抗元件的相邻对之间的抽头，其中每个抽头耦合到N个开关输入中的对应的一个。 ATU还包括用于每个抽头的电容元件，其中每个电容元件耦合在相应的一个抽头和电压节点之间。 在至少一个实施例中，每个电容元件由可编程电容器阵列组成。