公开(公告)号：US20120228728A1

公开(公告)日：2012-09-13

申请号：US13399475

申请日：2012-02-17

Applicant: Makoto UEKI ,  Naoya Inoue ,  Yoshihiro Hayashi

Inventor： Makoto UEKI ,  Naoya Inoue ,  Yoshihiro Hayashi

IPC: H01L29/82 ,  H01L21/8246

CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/08

Abstract: A semiconductor device in which MRAM is formed in a wiring layer A contained in a multilayered wiring layer, the MRAM having at least two first magnetization pinning layers in contact with a first wiring formed in a wiring layer and insulated from each other, a free magnetization layer overlapping the two first magnetization pinning layers in a plan view, and connected with the first magnetization pinning layers, a non-magnetic layer situated over the free magnetization layer, and a second magnetization pinning layer situated over the non-magnetic layer.

Abstract translation: 一种半导体器件，其中在包含在多层布线层中的布线层A中形成MRAM，所述MRAM具有与形成在布线层中并彼此绝缘的第一布线接触的至少两个第一磁化闭塞层，自由磁化 层在平面图中与两个第一磁化钉扎层重叠，并与第一磁化钉扎层，位于自由磁化层上方的非磁性层和位于非磁性层上的第二磁化钉扎层连接。

公开(公告)号：US20120015517A1

公开(公告)日：2012-01-19

申请号：US13182944

申请日：2011-07-14

Applicant: Daisuke OSHIDA ,  Ippei KUME ,  Makoto UEKI ,  Manabu IGUCHI ,  Naoya INOUE ,  Takuya MARUYAMA ,  Toshiji TAIJI ,  Hirokazu KATSUYAMA

Inventor： Daisuke OSHIDA ,  Ippei KUME ,  Makoto UEKI ,  Manabu IGUCHI ,  Naoya INOUE ,  Takuya MARUYAMA ,  Toshiji TAIJI ,  Hirokazu KATSUYAMA

IPC: H01L21/283

CPC classification number: H01L21/76883 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/3105 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The semiconductor device includes an insulating film that is formed using a cyclic siloxane having a six-membered ring structure as a raw material; a trench that is formed in the insulating film; and a interconnect that is configured by a metal film embedded in the trench. In the semiconductor device, a modified layer is formed on a bottom surface of the trench, in which the number of carbon atoms and/or the number of nitrogen atoms per unit volume is larger than that inside the insulating film.

Abstract translation: 半导体器件包括使用具有六元环结构的环状硅氧烷作为原料形成的绝缘膜; 在绝缘膜中形成的沟槽; 以及由嵌入在沟槽中的金属膜构成的互连。 在半导体装置中，在沟槽的底面上形成改性层，其中每单位体积的碳原子数和/或氮原子数大于绝缘膜内部。

公开(公告)号：US20110316161A1

公开(公告)日：2011-12-29

申请号：US13227031

申请日：2011-09-07

Applicant: Hiroto OHTAKE ,  Munehiro TADA ,  Makoto UEKI ,  Yoshihiro HAYASHI

Inventor： Hiroto OHTAKE ,  Munehiro TADA ,  Makoto UEKI ,  Yoshihiro HAYASHI

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In an insulating film structure having a barrier insulating film, a via interlayer insulating film, a wiring interlayer insulating film, and a hard mask film stacked in this order on an underlayer wiring, a via hole pattern is formed in the insulating film structure, then a groove pattern is formed in the hard mask film, and a grove is formed in the insulating film structure using this as a mask. According to the prior art, the via side wall is oxidized equally severely in the both processes. The trench side wall is oxidized severely in the via first process according to the prior art, whereas, according to the present invention, the oxidation thereof is suppressed to such an extent that an almost non-oxidized state can be created.

Abstract translation: 在具有阻挡绝缘膜，通孔层间绝缘膜，布线层间绝缘膜和硬掩模膜的绝缘膜结构中，依次层叠在下层布线上，在绝缘膜结构中形成通孔图案，然后， 在硬掩模膜中形成凹槽图案，并且使用其作为掩模在绝缘膜结构中形成凹槽。 根据现有技术，通孔侧壁在两个过程中同样严重氧化。 在根据现有技术的通孔第一工艺中，沟槽侧壁被严重氧化，而根据本发明，其氧化被抑制到几乎可以产生几乎非氧化状态的程度。

公开(公告)号：US20120061844A1

公开(公告)日：2012-03-15

申请号：US13302721

申请日：2011-11-22

Applicant: Makoto UEKI ,  Masayuki HIROI ,  Nobuyuki IKARASHI ,  Yoshihiro HAYASHI

Inventor： Makoto UEKI ,  Masayuki HIROI ,  Nobuyuki IKARASHI ,  Yoshihiro HAYASHI

IPC: H01L29/43

CPC classification number: H01L23/53233 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wiring metal contains a polycrystal of copper (Cu) as a primary element and an additional element other than Cu, and concentration of the additional element is, at crystal grain boundaries composing the Cu polycrystal and in vicinities of the crystal grain boundaries, higher than that of the inside of the crystal grains. The additional element is preferably at least one element selected from a group consisting of Ti, Zr, Hf, Cr, Co, Al, Sn, Ni, Mg, and Ag. This Cu wiring is formed by forming a Cu polycrystalline film, forming an additional element layer on this Cu film, and diffusing this additional element from the additional element layer into the Cu film. This copper alloy for wiring is preferred as metal wiring formed for a semiconductor device.

Abstract translation: 布线金属含有铜（Cu）作为主要元素的多晶体和除Cu以外的附加元素，并且附加元素的浓度在构成Cu多晶体并且在晶界附近的晶界处高于 晶粒内部的晶粒。 附加元素优选为选自Ti，Zr，Hf，Cr，Co，Al，Sn，Ni，Mg和Ag中的至少一种元素。 该Cu布线通过形成Cu多晶膜形成，在该Cu膜上形成附加元素层，并将该附加元素从附加元素层扩散到Cu膜中。 作为用于半导体器件的金属布线，该布线用铜合金是优选的。

公开(公告)号：US20120070986A1

公开(公告)日：2012-03-22

申请号：US13302348

申请日：2011-11-22

Applicant: Makoto UEKI ,  Takahiro ONODERA ,  Yoshihiro HAYASHI

Inventor： Makoto UEKI ,  Takahiro ONODERA ,  Yoshihiro HAYASHI

IPC: H01L21/768

CPC classification number: H01L23/5329 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a semiconductor device, which includes an interlayer insulating film formed on a semiconductor substrate, a wiring layer filled in a recess formed in the interlayer insulating film, and a cap insulating film. The interlayer insulating film includes a first SiOCH film and a surface modification layer including an SiOCH film formed by modifying a surface layer of the first SiOCH film, the SiOCH film having a lower carbon concentration and a higher oxygen concentration than the first SiOCH film has. The cap insulating film contacts with surfaces of the metal wiring and the surface modification layer.

Abstract translation: 提供了一种半导体器件，其包括形成在半导体衬底上的层间绝缘膜，填充在形成于层间绝缘膜中的凹部中的布线层和帽绝缘膜。 层间绝缘膜包括第一SiOCH膜和包括通过改性第一SiOCH膜的表面层形成的SiOCH膜的表面改性层，具有比第一SiOCH膜具有更低的碳浓度和更高的氧浓度的SiOCH膜具有。 盖绝缘膜与金属布线和表面改性层的表面接触。

公开(公告)号：US20090203208A1

公开(公告)日：2009-08-13

申请号：US12426549

申请日：2009-04-20

Applicant: Makoto UEKI ,  Masayuki HIROI ,  Nobuyuki IKARASHI ,  Yoshihiro HAYASHI

Inventor： Makoto UEKI ,  Masayuki HIROI ,  Nobuyuki IKARASHI ,  Yoshihiro HAYASHI

IPC: H01L21/768 ,  B05D5/12

CPC classification number: H01L23/53233 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wiring metal contains a polycrystal of copper (Cu) as a primary element and an additional element other than Cu, and concentration of the additional element is, at crystal grain boundaries composing the Cu polycrystal and in vicinities of the crystal grain boundaries, higher than that of the inside of the crystal grains. The additional element is preferably at least one element selected from a group consisting of Ti, Zr, Hf, Cr, Co, Al, Sn, Ni, Mg, and Ag. This Cu wiring is formed by forming a Cu polycrystalline film, forming an additional element layer on this Cu film, and diffusing this additional element from the additional element layer into the Cu film. This copper alloy for wiring is preferred as metal wiring formed for a semiconductor device.

Abstract translation: 布线金属含有铜（Cu）作为主要元素的多晶体和除Cu以外的附加元素，并且附加元素的浓度在构成Cu多晶体并且在晶界附近的晶界处高于 晶粒内部的晶粒。 附加元素优选为选自Ti，Zr，Hf，Cr，Co，Al，Sn，Ni，Mg和Ag中的至少一种元素。 该Cu布线通过形成Cu多晶膜形成，在该Cu膜上形成附加元素层，并将该附加元素从附加元素层扩散到Cu膜中。 作为用于半导体器件的金属布线，该布线用铜合金是优选的。