Semiconductor package structure
    1.
    发明授权

    公开(公告)号:US11670596B2

    公开(公告)日:2023-06-06

    申请号:US17208175

    申请日:2021-03-22

    Applicant: MEDIATEK INC.

    Abstract: A semiconductor package structure includes a substrate, a first redistribution layer, a second redistribution layer, a bridge structure, a first semiconductor component, and a second semiconductor component. The first redistribution layer is over the substrate. The second redistribution layer is over the first redistribution layer. The bridge structure is between the first redistribution layer and the second redistribution layer, wherein the bridge structure includes an active device. The first semiconductor component and the second semiconductor component are located over the second redistribution layer, wherein the first semiconductor component is electrically coupled to the second semiconductor component through the second redistribution layer and the bridge structure.

    LIDDED SEMICONDUCTOR PACKAGE
    2.
    发明申请

    公开(公告)号:US20230060065A1

    公开(公告)日:2023-02-23

    申请号:US17872005

    申请日:2022-07-25

    Applicant: MEDIATEK INC.

    Abstract: A semiconductor package includes a substrate having a top surface and a bottom surface; a semiconductor die mounted on the top surface of the substrate; and a two-part lid mounted on a perimeter of the top surface of the substrate and housing the semiconductor die. The two-part lid comprises an annular lid base and a cover plate removably installed on the annular lid base.

    Semiconductor package structure
    3.
    发明授权

    公开(公告)号:US12021031B2

    公开(公告)日:2024-06-25

    申请号:US17098659

    申请日:2020-11-16

    Applicant: MEDIATEK INC.

    CPC classification number: H01L23/5381 H01L23/5384 H01L23/5386 H01L24/14

    Abstract: A semiconductor package structure includes a substrate, a bridge structure, a redistribution layer, a first semiconductor component, and a second semiconductor component. The substrate has a wiring structure. The bridge structure is over the substrate. The redistribution layer is over the bridge structure. The first semiconductor component and the second semiconductor component are over the redistribution layer, wherein the first semiconductor component is electrically coupled to the second semiconductor component through the redistribution layer and the bridge structure.

    Semiconductor package having an interposer in which one or more dies are formed and method of forming the same

    公开(公告)号:US12136597B2

    公开(公告)日:2024-11-05

    申请号:US17515864

    申请日:2021-11-01

    Applicant: MEDIATEK INC.

    Abstract: A semiconductor package includes a first die structure, a first redistribution structure that is disposed on the first die structure, a second die structure that is disposed on the first redistribution structure, and a second redistribution structure that is disposed on the second die structure. The first die structure includes an interposer, and the interposer includes a semiconductor substrate and through-vias that penetrate through the semiconductor substrate. A first integrated circuit die is disposed in the semiconductor substrate of the interposer. The second die structure includes a second integrated circuit die that is encapsulated in an encapsulant and several conductive pillars that penetrate through the encapsulant. The first integrated circuit die is electrically connected to the second integrated circuit die through the first redistribution structure, the conductive pillars, and the second redistribution structure.

    SEMICONDUCTOR PACKAGE STRUCTURE
    8.
    发明申请

    公开(公告)号:US20210313271A1

    公开(公告)日:2021-10-07

    申请号:US17208175

    申请日:2021-03-22

    Applicant: MEDIATEK INC.

    Abstract: A semiconductor package structure includes a substrate, a first redistribution layer, a second redistribution layer, a bridge structure, a first semiconductor component, and a second semiconductor component. The first redistribution layer is over the substrate. The second redistribution layer is over the first redistribution layer. The bridge structure is between the first redistribution layer and the second redistribution layer, wherein the bridge structure includes an active device. The first semiconductor component and the second semiconductor component are located over the second redistribution layer, wherein the first semiconductor component is electrically coupled to the second semiconductor component through the second redistribution layer and the bridge structure.

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