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1.发明公开公开(公告)号：US20240153877A1
公开(公告)日：2024-05-09
申请号：US18402618
申请日：2024-01-02
发明人： Jordan D. Greenlee , John D. Hopkins , Rita J. Klein , Everett A. McTeer , Lifang Xu , Daniel Billingsley , Collin Howder
IPC分类号： H01L23/535 , H01L21/768 , H01L23/522 , H01L23/528 , H01L23/532 , H10B41/27 , H10B41/35 , H10B43/27 , H10B43/35
CPC分类号： H01L23/535 , H01L21/76805 , H01L21/76816 , H01L21/76877 , H01L21/76895 , H01L23/5226 , H01L23/5283 , H01L23/53257 , H10B41/27 , H10B41/35 , H10B43/27 , H10B43/35
摘要： A microelectronic device includes a stack structure, a staircase structure, conductive pad structures, and conductive contact structures. The stack structure includes vertically alternating conductive structures and insulating structures arranged in tiers. Each of the tiers individually includes one of the conductive structures and one of the insulating structures. The staircase structure has steps made up of edges of at least some of the tiers of the stack structure. The conductive pad structures are on the steps of the staircase structure and include beta phase tungsten. The conductive contact structures are on the conductive pad structures. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.
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公开(公告)号：US11871566B2
公开(公告)日：2024-01-09
申请号：US17590052
申请日：2022-02-01
发明人： Collin Howder , Chet E. Carter
摘要： A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers above a substrate. Horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. Catalytic material is formed in a bottom region of individual of the trenches. Metal material is electrolessly deposited onto a catalytic surface of the catalytic material to individually fill at least a majority of remaining volume of the individual trenches. Channel-material strings are formed and extend through the first tiers and the second tiers. Other embodiments, including structure independent of method, are disclosed.
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公开(公告)号：US12063782B2
公开(公告)日：2024-08-13
申请号：US17941900
申请日：2022-09-09
IPC分类号： H10B43/27 , H01L21/02 , H01L21/28 , H01L21/285 , H01L21/311 , H01L29/66 , H10B41/10 , H10B41/27 , H10B43/10
CPC分类号： H10B43/27 , H01L21/02164 , H01L21/0217 , H01L21/02532 , H01L21/28518 , H01L21/31111 , H01L29/40114 , H01L29/40117 , H01L29/66545 , H10B41/10 , H10B41/27 , H10B43/10
摘要： Some embodiments include methods of forming integrated assemblies. A conductive structure is formed to include a semiconductor-containing material over a metal-containing material. An opening is formed to extend into the conductive structure. A conductive material is formed along a bottom of the opening. A stack of alternating first and second materials is formed over the conductive structure either before or after forming the conductive material. Insulative material and/or channel material is formed to extend through the stack to contact the conductive material. Some embodiments include integrated assemblies.
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4.发明公开公开(公告)号：US20240164092A1
公开(公告)日：2024-05-16
申请号：US18389988
申请日：2023-12-20
发明人： Collin Howder , Chet E. Carter
摘要： A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers above a substrate. Horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. Catalytic material is formed in a bottom region of individual of the trenches. Metal material is electrolessly deposited onto a catalytic surface of the catalytic material to individually fill at least a majority of remaining volume of the individual trenches. Channel-material strings are formed and extend through the first tiers and the second tiers. Other embodiments, including structure independent of method, are disclosed.
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