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    MRAM cell structure and method of fabrication
    1.
    发明授权
    MRAM cell structure and method of fabrication 有权
    MRAM单元结构及其制造方法

    公开(公告)号：US07476919B2

    公开(公告)日：2009-01-13

    申请号：US11418910

    申请日：2006-05-05

    Applicant: Liubo Hong ,  Tom Zhong ,  Lin Yang

    Inventor： Liubo Hong ,  Tom Zhong ,  Lin Yang

    IPC: H01L27/108

    CPC classification number: G11C11/16 ,  H01L27/222 ,  H01L43/12

    Abstract: An MRAM structure is disclosed where the distance from a bit line or word line to an underlying free layer in an MTJ is small and well controlled. As a result, the bit line or word line switching current is reduced and tightly distributed for better device performance. A key feature in the method of forming the MRAM cell structure is a two step planarization of an insulation layer deposited on the MTJ array. A CMP step flattens the insulation layer at a distance about 60 to 200 Angstroms above the cap layer in the MTJ. Then an etch back step thins the insulation layer to a level about 50 to 190 Angstroms below the top of the cap layer. Less than 5 Angstroms of the cap layer is removed. The distance variation from the free layer to an overlying bit line or word line is within +/−5 Angstroms.

    Abstract translation: 公开了一种MRAM结构，其中从位线或字线到MTJ中的下游自由层的距离小且受到良好控制。 因此，位线或字线切换电流减少并且分布紧密，从而更好的器件性能。 形成MRAM单元结构的方法中的一个关键特征是沉积在MTJ阵列上的绝缘层的两步平面化。 CMP步骤在MTJ的帽层上方约60至200埃的距离处使绝缘层平坦化。 然后，回蚀步骤将绝缘层沉降到帽层顶部下方约50至190埃的水平。 少于5埃的盖层被去除。 从自由层到上位线或字线的距离变化在+/- 5埃以内。

    MRAM cell structure and method of fabrication
    2.
    发明申请
    MRAM cell structure and method of fabrication 有权

    公开(公告)号：US20060209591A1

    公开(公告)日：2006-09-21

    申请号：US11418910

    申请日：2006-05-05

    Applicant: Liubo Hong ,  Tom Zhong ,  Lin Yang

    Inventor： Liubo Hong ,  Tom Zhong ,  Lin Yang

    IPC: G11C11/15

    CPC classification number: G11C11/16 ,  H01L27/222 ,  H01L43/12

    Abstract: An MRAM structure is disclosed where the distance from a bit line or word line to an underlying free layer in an MTJ is small and well controlled. As a result, the bit line or word line switching current is reduced and tightly distributed for better device performance. A key feature in the method of forming the MRAM cell structure is a two step planarization of an insulation layer deposited on the MTJ array. A CMP step flattens the insulation layer at a distance about 60 to 200 Angstroms above the cap layer in the MTJ. Then an etch back step thins the insulation layer to a level about 50 to 190 Angstroms below the top of the cap layer. Less than 5 Angstroms of the cap layer is removed. The distance variation from the free layer to an overlying bit line or word line is within +/−5 Angstroms.

    MRAM cell structure and method of fabrication
    3.
    发明申请
    MRAM cell structure and method of fabrication 有权
    MRAM单元结构及其制造方法

    公开(公告)号：US20050260773A1

    公开(公告)日：2005-11-24

    申请号：US10849311

    申请日：2004-05-19

    Applicant: Liubo Hong ,  Tom Zhong ,  Lin Yang

    Inventor： Liubo Hong ,  Tom Zhong ,  Lin Yang

    IPC: G11C11/16 ,  H01L21/00 ,  H01L27/22 ,  H01L43/12

    CPC classification number: G11C11/16 ,  H01L27/222 ,  H01L43/12

    Abstract: An MRAM structure is disclosed where the distance from a bit line or word line to an underlying free layer in an MTJ is small and well controlled. As a result, the bit line or word line switching current is reduced and tightly distributed for better device performance. A key feature in the method of forming the MRAM cell structure is a two step planarization of an insulation layer deposited on the MTJ array. A CMP step flattens the insulation layer at a distance about 60 to 200 Angstroms above the cap layer in the MTJ. Then an etch back step thins the insulation layer to a level about 50 to 190 Angstroms below the top of the cap layer. Less than 5 Angstroms of the cap layer is removed. The distance variation from the free layer to an overlying bit line or word line is within +/−5 Angstroms.

    Abstract translation: 公开了一种MRAM结构，其中从位线或字线到MTJ中的下游自由层的距离小且受到良好控制。 因此，位线或字线切换电流减少并且分布紧密，从而更好的器件性能。 形成MRAM单元结构的方法中的一个关键特征是沉积在MTJ阵列上的绝缘层的两步平面化。 CMP步骤在MTJ的帽层上方约60至200埃的距离处使绝缘层平坦化。 然后，回蚀步骤将绝缘层沉降到帽层顶部下方约50至190埃的水平。 少于5埃的盖层被去除。 从自由层到上位线或字线的距离变化在+/- 5埃以内。

    MRAM cell structure and method of fabrication
    4.
    发明授权
    MRAM cell structure and method of fabrication 有权

    公开(公告)号：US07045368B2

    公开(公告)日：2006-05-16

    申请号：US10849311

    申请日：2004-05-19

    Applicant: Liubo Hong ,  Tom Zhong ,  Lin Yang

    Inventor： Liubo Hong ,  Tom Zhong ,  Lin Yang

    IPC: H01L21/00

    CPC classification number: G11C11/16 ,  H01L27/222 ,  H01L43/12

    Abstract: An MRAM structure is disclosed where the distance from a bit line or word line to an underlying free layer in an MTJ is small and well controlled. As a result, the bit line or word line switching current is reduced and tightly distributed for better device performance. A key feature in the method of forming the MRAM cell structure is a two step planarization of an insulation layer deposited on the MTJ array. A CMP step flattens the insulation layer at a distance about 60 to 200 Angstroms above the cap layer in the MTJ. Then an etch back step thins the insulation layer to a level about 50 to 190 Angstroms below the top of the cap layer. Less than 5 Angstroms of the cap layer is removed. The distance variation from the free layer to an overlying bit line or word line is within +/−5 Angstroms.

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