Invention Application
- Patent Title: Process to fabricate bottom electrode for MRAM device
- Patent Title (中): 制造MRAM器件底电极的工艺
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Application No.: US12927615Application Date: 2010-11-19
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Publication No.: US20110076785A1Publication Date: 2011-03-31
- Inventor: Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
- Applicant: Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
- Assignee: MagIC Technologies, Inc.
- Current Assignee: MagIC Technologies, Inc.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”.
Public/Granted literature
- US08273666B2 Process to fabricate bottom electrode for MRAM device Public/Granted day:2012-09-25
Information query
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