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公开(公告)号:US20190334041A1
公开(公告)日:2019-10-31
申请号:US16506644
申请日:2019-07-09
Applicant: LG ELECTRONICS, INC.
Inventor: Yujin LEE , Kwangsun JI , Seungjik LEE , Sehwon AHN
IPC: H01L31/0224 , H01L31/0368 , H01L31/0745 , H01L31/18 , H01L31/0312 , H01L31/20 , H01L31/0376 , H01L31/0747
Abstract: A method for manufacturing a solar cell can include forming a tunnel layer on a back surface of a semiconductor substrate; forming an amorphous silicon layer on the tunnel layer; crystallizing the amorphous silicon layer into a crystalline silicon layer; performing a diffusion process to form a doped region in the crystalline silicon layer; forming an insulating layer on the crystalline silicon layer; and forming an electrode contacting with the crystalline silicon layer through an opening of the insulating layer.
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公开(公告)号:US20150214396A1
公开(公告)日:2015-07-30
申请号:US14572284
申请日:2014-12-16
Applicant: LG ELECTRONICS INC.
Inventor: Yujin LEE , Kwangsun JI , Seungjik LEE , Sehwon AHN
IPC: H01L31/0224 , H01L31/0376 , H01L31/18 , H01L31/20 , H01L31/0312
Abstract: A solar cell and a method for manufacturing the same are discussed. The method for manufacturing the solar cell includes forming an amorphous silicon layer on a back surface of a crystalline semiconductor substrate containing impurities of a first conductive type, performing a first diffusion process for diffusing impurities of a second conductive type opposite the first conductive type into a portion of the amorphous silicon layer to form an emitter region, and performing a second diffusion process for diffusing impurities of the first conductive type into a remaining portion except the portion of the amorphous silicon layer having the impurities of the second conductive type to form a back surface field region. When at least one of the first diffusion process and the second diffusion process is performed, the amorphous silicon layer is crystallized to form a silicon layer.
Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池的制造方法包括在包含第一导电类型的杂质的结晶半导体衬底的背面上形成非晶硅层,进行第一扩散处理,将与第一导电类型相反的第二导电类型的杂质扩散为 并且进行第二扩散处理,用于将第一导电类型的杂质扩散到除了具有第二导电类型的杂质的非晶硅层的部分之外的剩余部分中以形成背面 表面场区域。 当执行第一扩散处理和第二扩散处理中的至少一个时,非晶硅层被结晶以形成硅层。
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公开(公告)号:US20180138334A1
公开(公告)日:2018-05-17
申请号:US15792214
申请日:2017-10-24
Applicant: LG ELECTRONICS INC.
Inventor: Yujin LEE , Taein KWON , Kwangsun JI , Hongcheol LEE
IPC: H01L31/0224 , H01L31/0216 , H01L31/0236 , H01L31/18
CPC classification number: H01L31/022425 , H01L31/02167 , H01L31/022466 , H01L31/02363 , H01L31/03685 , H01L31/0747 , H01L31/1804 , H01L31/1884 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
Abstract: Disclosed is a method for manufacturing a solar cell. The method includes: forming a first tunneling layer on one surface of a semiconductor substrate; forming a first conductive region on the first tunneling layer so that the first conductive region includes a metal oxide layer having an amorphous structure; and forming a first electrode electrically connected to the first conductive region.
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公开(公告)号:US20160197204A1
公开(公告)日:2016-07-07
申请号:US14988513
申请日:2016-01-05
Applicant: LG ELECTRONICS INC.
Inventor: Seungjik LEE , Kwangsun JI , Yujin LEE , Sehwon AHN
IPC: H01L31/0288 , H01L31/077 , H01L31/0352 , H01L31/18 , H01L31/036
CPC classification number: H01L31/022441 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02P70/521
Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a crystalline semiconductor substrate containing impurities of a first conductive type, a tunnel layer positioned on the crystalline semiconductor substrate, a semiconductor layer which is formed on the tunnel layer, has a crystallinity less than the crystalline semiconductor substrate, and includes a first doped region of a second conductive type opposite the first conductive type and a second doped region containing impurities of the first conductive type at a higher concentration than that of the crystalline semiconductor substrate, a first electrode connected to the first doped region, and a second electrode connected to the second doped region.
Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池包括含有第一导电类型杂质的晶体半导体衬底,位于晶体半导体衬底上的隧道层,在隧道层上形成的半导体层的结晶度小于结晶半导体衬底,并且包括 具有与第一导电类型相反的第二导电类型的第一掺杂区和比第一掺杂区连接的第一电极和第二掺杂区,第二掺杂区含有比第一掺杂区连接的第一电极的第一导电类型的杂质更高的浓度; 电极连接到第二掺杂区域。
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公开(公告)号:US20160155877A1
公开(公告)日:2016-06-02
申请号:US14953252
申请日:2015-11-27
Applicant: LG ELECTRONICS INC.
Inventor: Jin-won CHUNG , Yujin LEE , Kwangsun JI
IPC: H01L31/0747 , H01L31/20 , H01L31/0216
CPC classification number: H01L31/0747 , H01L31/02167 , H01L31/02168 , H01L31/022441 , H01L31/0264 , H01L31/035272 , H01L31/03682 , H01L31/03762 , H01L31/202 , H01L31/208 , Y02E10/546 , Y02E10/548
Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate containing impurities of a first conductive type, a front surface field region which is positioned at a front surface of the semiconductor substrate, contains impurities of the first conductive type at a higher concentration than the semiconductor substrate, and has a crystal structure or a crystallinity different from the semiconductor substrate, an emitter region which is positioned at a back surface of the semiconductor substrate and has a second conductive type opposite the first conductive type, a back surface field region which is positioned at the back surface of the semiconductor substrate and contains impurities of the first conductive type at a higher concentration than the semiconductor substrate, a first electrode connected to the emitter region, and a second electrode connected to the back surface field region.
Abstract translation: 公开了一种太阳能电池及其制造方法。 太阳能电池包括含有第一导电类型的杂质的半导体衬底,位于半导体衬底的前表面的前表面场区域,包含比半导体衬底更高的浓度的第一导电类型的杂质,并且具有 与半导体衬底不同的晶体结构或结晶度,位于半导体衬底的后表面并且具有与第一导电类型相反的第二导电类型的发射极区域,位于后表面的背表面场区域 并且包含比半导体衬底更高的浓度的第一导电类型的杂质,连接到发射极区的第一电极和连接到背表面场区的第二电极。
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公开(公告)号:US20190157495A1
公开(公告)日:2019-05-23
申请号:US16250681
申请日:2019-01-17
Applicant: LG ELECTRONICS INC.
Inventor: Kwangsun JI , Jin-won CHUNG , Yujin LEE
IPC: H01L31/18 , H01L31/0216 , H01L31/0745
CPC classification number: H01L31/1872 , H01L31/02167 , H01L31/0745 , H01L31/1804 , H01L31/182 , Y02E10/547 , Y02P70/521
Abstract: A method for manufacturing a solar cell, includes forming an oxide layer on first surface of a single crystalline silicon substrate; forming a poly crystalline silicon layer doped with a first dopant having a first conductive type on the oxide layer; diffusing a second dopant having a second conductive type opposite to the first conductive type into a second surface of the single crystalline silicon substrate thereby forming a diffusion region; forming a first passivation layer on the poly crystalline silicon layer; forming a second passivation layer on the diffusion region; forming a first electrode connected to the poly crystalline silicon layer by printing a first paste on the first passivation layer and firing through; forming a second electrode connected to the diffusion region by printing a second paste on the second passivation layer and firing through.
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公开(公告)号:US20170200850A1
公开(公告)日:2017-07-13
申请号:US15403932
申请日:2017-01-11
Applicant: LG ELECTRONICS INC.
Inventor: Yujin LEE , Jinwon CHUNG , Kwangsun JI
IPC: H01L31/068 , H01L31/0216 , H01L31/18 , H01L31/036
CPC classification number: H01L31/0682 , H01L31/02167 , H01L31/022441 , H01L31/036 , H01L31/0368 , H01L31/1872 , Y02E10/547 , Y02P70/521
Abstract: Disclosed is a solar cell including a semiconductor substrate, a protective-film layer formed over one surface of the semiconductor substrate, a first conductive area disposed over the protective-film layer, the first conductive area being of a first conductive type and including a crystalline semiconductor, and a first electrode electrically connected to the first conductive area. The first conductive area includes a first portion disposed over the protective-film layer and having a first crystal grain size, and a second portion disposed over the first portion and having a second crystal grain size, which is greater than the first crystal grain size.
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公开(公告)号:US20160126400A1
公开(公告)日:2016-05-05
申请号:US14931591
申请日:2015-11-03
Applicant: LG ELECTRONICS INC.
Inventor: Kwangsun JI , Jin-won CHUNG , Yujin LEE
IPC: H01L31/077 , H01L31/0368 , H01L31/068 , H01L31/18
CPC classification number: H01L31/1872 , H01L31/02167 , H01L31/0745 , H01L31/1804 , H01L31/182 , Y02E10/547 , Y02P70/521
Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate containing impurities of a first conductive type, a tunnel layer positioned on the semiconductor substrate, an emitter region positioned on the tunnel layer and containing impurities of a second conductive type opposite the first conductive type, a dopant layer positioned on the emitter region and formed of a dielectric material containing impurities of the second conductive type, a first electrode connected to the semiconductor substrate, and a second electrode configured to pass through the dopant layer and connected to the emitter region.
Abstract translation: 公开了一种太阳能电池及其制造方法。 太阳能电池包括含有第一导电类型杂质的半导体衬底,位于半导体衬底上的隧道层,位于隧道层上的发射极区域,并且含有与第一导电类型相反的第二导电类型的杂质,位于 在发射极区域上并由含有第二导电类型的杂质的电介质材料形成,连接到半导体衬底的第一电极和被配置为穿过掺杂剂层并连接到发射极区域的第二电极。
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公开(公告)号:US20140202526A1
公开(公告)日:2014-07-24
申请号:US14151478
申请日:2014-01-09
Applicant: LG ELECTRONICS INC.
Inventor: Eunhye YOUN , Sangwook PARK , Seunghwan SHIM , Yujin LEE
IPC: H01L31/065 , H01L31/0376 , H01L31/0368 , H01L31/18 , H01L31/0352
CPC classification number: H01L31/065 , H01L31/035272 , H01L31/03685 , H01L31/03762 , H01L31/068 , H01L31/1824 , Y02E10/547
Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate containing impurities of a first conductive type, an emitter region which is positioned at a front surface of the substrate and contains impurities of a second conductive type opposite the first conductive type, a back passivation layer which is positioned on a back surface of the substrate and has openings, a back surface field region containing impurities of the first conductive type, a first electrode connected to the emitter region, and a second electrode connected to the back surface field region. The back surface field region includes a first back surface field region positioned on the back passivation layer and a second back surface field region, which is positioned at the back surface of the substrate exposed by the openings of the back passivation layer.
Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池包括含有第一导电类型的杂质的基板,位于基板的前表面的发射极区域,并且包含位于第一导电类型的第二导电类型的第二导电类型的杂质; 并且具有开口,包含第一导电类型的杂质的背面场区域,连接到发射极区域的第一电极和连接到背面场区域的第二电极。 背面场区域包括位于背面钝化层上的第一背面场区域和位于由背面钝化层的开口暴露的衬底背面的第二背面场区域。
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公开(公告)号:US20190157496A1
公开(公告)日:2019-05-23
申请号:US16250694
申请日:2019-01-17
Applicant: LG ELECTRONICS INC.
Inventor: Kwangsun JI , Jin-won CHUNG , Yujin LEE
IPC: H01L31/18 , H01L31/0216 , H01L31/0745
CPC classification number: H01L31/1872 , H01L31/02167 , H01L31/0745 , H01L31/1804 , H01L31/182 , Y02E10/547 , Y02P70/521
Abstract: A solar cell includes a semiconductor substrate containing impurities of a first conductive type; a tunnel layer positioned on the semiconductor substrate; an emitter region positioned on the tunnel layer and containing impurities of a second conductive type opposite the first conductive type; a dopant layer positioned on the emitter region and formed of a dielectric material containing impurities of the second conductive type; a first electrode connected to the semiconductor substrate; and a second electrode configured to pass through the dopant layer, and connected to the emitter region.
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