公开(公告)号：US20180138334A1

公开(公告)日：2018-05-17

申请号：US15792214

申请日：2017-10-24

Applicant: LG ELECTRONICS INC.

Inventor： Yujin LEE ,  Taein KWON ,  Kwangsun JI ,  Hongcheol LEE

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1884 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: Disclosed is a method for manufacturing a solar cell. The method includes: forming a first tunneling layer on one surface of a semiconductor substrate; forming a first conductive region on the first tunneling layer so that the first conductive region includes a metal oxide layer having an amorphous structure; and forming a first electrode electrically connected to the first conductive region.

公开(公告)号：US20170207354A1

公开(公告)日：2017-07-20

申请号：US15406345

申请日：2017-01-13

Applicant: LG ELECTRONICS INC.

Inventor： Hongcheol LEE ,  Seungyoon LEE ,  Kwangsun JI ,  Minho CHOI

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/072

CPC classification number: H01L31/022475 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022433 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02366 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/52 ,  Y02P70/521

Abstract: A solar cell is disclosed. The solar cell includes a crystalline semiconductor substrate containing impurities of a first conductivity type, a front doped layer located on a front surface of the semiconductor substrate, a back doped layer located on a back surface of the semiconductor substrate, a front transparent conductive layer located on the front doped layer and having a first thickness, a front collector electrode located on the front transparent conductive layer, a back transparent conductive layer located under the back doped layer and having a second thickness, and a back collector electrode located under the back transparent conductive layer. The first thickness of the front transparent conductive layer and the second thickness of the back transparent conductive layer are different from each other, and a sheet resistance of the front transparent conductive layer is less than a sheet resistance of the back transparent conductive layer.

公开(公告)号：US20160197204A1

公开(公告)日：2016-07-07

申请号：US14988513

申请日：2016-01-05

Applicant: LG ELECTRONICS INC.

Inventor： Seungjik LEE ,  Kwangsun JI ,  Yujin LEE ,  Sehwon AHN

IPC: H01L31/0288 ,  H01L31/077 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/036

CPC classification number: H01L31/022441 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a crystalline semiconductor substrate containing impurities of a first conductive type, a tunnel layer positioned on the crystalline semiconductor substrate, a semiconductor layer which is formed on the tunnel layer, has a crystallinity less than the crystalline semiconductor substrate, and includes a first doped region of a second conductive type opposite the first conductive type and a second doped region containing impurities of the first conductive type at a higher concentration than that of the crystalline semiconductor substrate, a first electrode connected to the first doped region, and a second electrode connected to the second doped region.

Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池包括含有第一导电类型杂质的晶体半导体衬底，位于晶体半导体衬底上的隧道层，在隧道层上形成的半导体层的结晶度小于结晶半导体衬底，并且包括 具有与第一导电类型相反的第二导电类型的第一掺杂区和比第一掺杂区连接的第一电极和第二掺杂区，第二掺杂区含有比第一掺杂区连接的第一电极的第一导电类型的杂质更高的浓度; 电极连接到第二掺杂区域。

公开(公告)号：US20150263188A1

公开(公告)日：2015-09-17

申请号：US14720527

申请日：2015-05-22

Applicant: LG ELECTRONICS INC.

Inventor： Wonseok CHOI ,  Kwangsun JI ,  Heonmin LEE ,  Hojung SYN ,  Junghoon CHOI ,  Hyunjin YANG

IPC: H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02366 ,  H01L31/0288 ,  H01L31/03529 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547

Abstract: A solar cell is discussed, and includes a substrate; a first field region; a first electrode directly formed on an emitter region; and a second electrode directly formed on a second field region, wherein a second passivation layer comprises a first back passivation portion and a second back passivation portion. Furthermore, the first back passivation portion is merely positioned between the emitter region and the substrate and the second field region and the substrate, and the second back passivation portion is positioned between the emitter region and the second field region, and wherein the first back passivation portion positioned between the emitter region and the substrate is physically separated from first back passivation portion positioned between the second field region and the substrate.

Abstract translation: 讨论了太阳能电池，并且包括基板; 第一场地; 直接形成在发射极区域上的第一电极; 以及直接形成在第二场区上的第二电极，其中第二钝化层包括第一后​​钝化部分和第二后钝化部分。 此外，第一背面钝化部分仅位于发射极区域和衬底之间，并且第二场区域和衬底之间，并且第二背部钝化部分位于发射极区域和第二场区域之间，并且其中第一背面钝化部分 位于发射极区域和衬底之间的部分与位于第二场区域和衬底之间的第一背面钝化部分物理分离。

公开(公告)号：US20190334041A1

公开(公告)日：2019-10-31

申请号：US16506644

申请日：2019-07-09

Applicant: LG ELECTRONICS, INC.

Inventor： Yujin LEE ,  Kwangsun JI ,  Seungjik LEE ,  Sehwon AHN

IPC: H01L31/0224 ,  H01L31/0368 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/0312 ,  H01L31/20 ,  H01L31/0376 ,  H01L31/0747

Abstract: A method for manufacturing a solar cell can include forming a tunnel layer on a back surface of a semiconductor substrate; forming an amorphous silicon layer on the tunnel layer; crystallizing the amorphous silicon layer into a crystalline silicon layer; performing a diffusion process to form a doped region in the crystalline silicon layer; forming an insulating layer on the crystalline silicon layer; and forming an electrode contacting with the crystalline silicon layer through an opening of the insulating layer.

公开(公告)号：US20170084759A1

公开(公告)日：2017-03-23

申请号：US15367811

申请日：2016-12-02

Applicant: LG ELECTRONICS INC.

Inventor： Wonseok CHOI ,  Kwangsun JI ,  Heonmin LEE ,  Hojung SYN ,  Junghoon CHOI ,  Hyunjin YANG

IPC: H01L31/0216 ,  H01L31/18 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/0236

CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02366 ,  H01L31/0288 ,  H01L31/03529 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547

Abstract: A solar cell is discussed. The solar cell includes a silicon substrate; a front passivation layer positioned on a front surface of the silicon substrate; an n-doped layer positioned on the front surface of the silicon substrate; an anti-reflection layer positioned on the n-doped layer; a p-doped region positioned on a rear surface of the silicon substrate; an n-doped region positioned on the rear surface of the silicon substrate and spaced apart from the p-doped region; a rear passivation layer positioned on the rear surface of the silicon substrate, the rear passivation layer including: a first portion positioned between the p-doped region and the silicon substrate; a second portion positioned between the n-doped region and the silicon substrate, the second portion being space apart from the first potion; and a third portion disposed between the first portion and the second portion; a first electrode directly contacted to the p-doped region; and a second electrode directly contacted to the n-doped region.

公开(公告)号：US20160225940A1

公开(公告)日：2016-08-04

申请号：US15097897

申请日：2016-04-13

Applicant: LG ELECTRONICS INC.

Inventor： Sunho KIM ,  Heonmin LEE ,  Kwangsun JI ,  Youngjoo EO ,  Junghoon CHOI ,  Sehwon AHN

IPC: H01L31/20 ,  H01L31/18

CPC classification number: H01L31/03762 ,  C25D7/126 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/1884 ,  H01L31/20 ,  H01L31/202 ,  H05K3/188 ,  H05K3/246 ,  H05K2201/0108 ,  H05K2201/0326 ,  Y02E10/50

Abstract: Discussed is a method of manufacturing a solar cell including preparing a single crystalline silicon substrate having a first conductive type impurity; forming a non-single crystalline silicon emitter layer having a second conductive type impurity opposite to the first conductive type impurity on a first surface of the single crystalline silicon substrate; forming a first transparent conductive oxide layer on the first surface of the single crystalline silicon substrate; forming a first electrode electrically connected to the first transparent conductive oxide layer; and forming a second electrode electrically connected to the single crystalline silicon substrate, wherein the forming of the first electrode includes; forming a first seed layer on the first transparent conductive oxide layer, and forming a first plating layer over the first seed layer by plating a first conductive material.

Abstract translation: 讨论了制造太阳能电池的方法，包括制备具有第一导电类型杂质的单晶硅衬底; 在单晶硅衬底的第一表面上形成具有与第一导电类型杂质相反的第二导电类型杂质的非单晶硅发射极层; 在单晶硅衬底的第一表面上形成第一透明导电氧化物层; 形成与第一透明导电氧化物层电连接的第一电极; 以及形成与所述单晶硅衬底电连接的第二电极，其中所述第一电极的形成包括： 在所述第一透明导电氧化物层上形成第一晶种层，以及通过镀覆第一导电材料在所述第一晶种层上形成第一镀层。

公开(公告)号：US20150214396A1

公开(公告)日：2015-07-30

申请号：US14572284

申请日：2014-12-16

Applicant: LG ELECTRONICS INC.

Inventor： Yujin LEE ,  Kwangsun JI ,  Seungjik LEE ,  Sehwon AHN

IPC: H01L31/0224 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0312

Abstract: A solar cell and a method for manufacturing the same are discussed. The method for manufacturing the solar cell includes forming an amorphous silicon layer on a back surface of a crystalline semiconductor substrate containing impurities of a first conductive type, performing a first diffusion process for diffusing impurities of a second conductive type opposite the first conductive type into a portion of the amorphous silicon layer to form an emitter region, and performing a second diffusion process for diffusing impurities of the first conductive type into a remaining portion except the portion of the amorphous silicon layer having the impurities of the second conductive type to form a back surface field region. When at least one of the first diffusion process and the second diffusion process is performed, the amorphous silicon layer is crystallized to form a silicon layer.

Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池的制造方法包括在包含第一导电类型的杂质的结晶半导体衬底的背面上形成非晶硅层，进行第一扩散处理，将与第一导电类型相反的第二导电类型的杂质扩散为 并且进行第二扩散处理，用于将第一导电类型的杂质扩散到除了具有第二导电类型的杂质的非晶硅层的部分之外的剩余部分中以形成背面 表面场区域。 当执行第一扩散处理和第二扩散处理中的至少一个时，非晶硅层被结晶以形成硅层。

公开(公告)号：US20190355860A1

公开(公告)日：2019-11-21

申请号：US16530701

申请日：2019-08-02

Applicant: LG ELECTRONICS INC.

Inventor： Hyungseok KIM ,  Kwangsun JI ,  Youngjoo EO ,  Heonmin LEE ,  Choul KIM ,  Hojung SYN ,  Wonseok CHOI ,  Kihoon PARK ,  Junghoon CHOI ,  Hyunjin YANG

IPC: H01L31/0747 ,  H01L31/0216

Abstract: A solar cell can include a single crystalline semiconductor substrate; an emitter region positioned on an incident surface of the substrate, forming a p-n junction with the single crystalline semiconductor substrate; a first passivation layer positioned on a rear surface of the substrate and made of an oxide material; a back surface field layer positioned on the first passivation layer and forming a hetero junction with the single crystalline semiconductor substrate; a first electrode electrically connected to the emitter region; and a second electrode electrically connected to the single crystalline semiconductor substrate

公开(公告)号：US20190157496A1

公开(公告)日：2019-05-23

申请号：US16250694

申请日：2019-01-17

Applicant: LG ELECTRONICS INC.

Inventor： Kwangsun JI ,  Jin-won CHUNG ,  Yujin LEE

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0745

CPC classification number: H01L31/1872 ,  H01L31/02167 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes a semiconductor substrate containing impurities of a first conductive type; a tunnel layer positioned on the semiconductor substrate; an emitter region positioned on the tunnel layer and containing impurities of a second conductive type opposite the first conductive type; a dopant layer positioned on the emitter region and formed of a dielectric material containing impurities of the second conductive type; a first electrode connected to the semiconductor substrate; and a second electrode configured to pass through the dopant layer, and connected to the emitter region.