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公开(公告)号:US20190252562A1
公开(公告)日:2019-08-15
申请号:US16393591
申请日:2019-04-24
Applicant: LG ELECTRONICS INC.
Inventor: Kwangsun JI , Sehwon AHN
IPC: H01L31/0224 , H01L31/18 , H01L31/068 , H01L31/02 , H01L31/0352
CPC classification number: H01L31/022441 , H01L31/02008 , H01L31/022433 , H01L31/035281 , H01L31/0682 , H01L31/18 , Y02E10/52 , Y02E10/547
Abstract: A solar cell includes a semiconductor substrate, a first semiconductor region positioned at a front surface or a back surface of the semiconductor substrate and doped with impurities of a first conductive type, a first electrode on the first semiconductor region, a second electrode on the back surface of the semiconductor substrate, and a second semiconductor region positioned between the semiconductor substrate and the second electrode and doped with impurities of a second conductive type opposite the first conductive type, wherein the second electrode is formed of a metal foil, and an air gap is formed between the second electrode formed of the metal foil and the back surface of the semiconductor substrate.
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公开(公告)号:US20160233359A1
公开(公告)日:2016-08-11
申请号:US15097870
申请日:2016-04-13
Applicant: LG ELECTRONICS INC.
Inventor: Sunho KIM , Heonmin LEE , Kwangsun JI , Youngjoo EO , Junghoon CHOI , Sehwon AHN
IPC: H01L31/0376 , H01L31/0236 , H01L31/02 , H01L31/0224 , H01L31/0216
CPC classification number: H01L31/03762 , C25D7/126 , H01L31/02008 , H01L31/02168 , H01L31/022425 , H01L31/022441 , H01L31/022466 , H01L31/02363 , H01L31/1884 , H01L31/20 , H01L31/202 , H05K3/188 , H05K3/246 , H05K2201/0108 , H05K2201/0326 , Y02E10/50
Abstract: Discussed is a solar cell including a single crystalline semiconductor substrate having a first transparent conductive oxide layer positioned on a non-single crystalline emitter layer; a second transparent conductive oxide layer positioned over a rear surface of the single crystalline semiconductor substrate; a first electrode part including a first seed layer directly positioned on the first transparent conductive oxide layer; and a second electrode part including a second seed layer directly positioned on the second transparent conductive oxide layer, wherein the first transparent conductive oxide layer and the first seed layer have different conductivities, and wherein the second transparent conductive oxide layer and the second seed layer have different conductivities.
Abstract translation: 讨论了包括单晶半导体衬底的太阳能电池,其具有位于非单结晶体发射极层上的第一透明导电氧化物层; 位于单晶半导体衬底的后表面上的第二透明导电氧化物层; 第一电极部分,包括直接位于第一透明导电氧化物层上的第一籽晶层; 以及包括直接位于所述第二透明导电氧化物层上的第二籽晶层的第二电极部,其中所述第一透明导电氧化物层和所述第一种子层具有不同的导电性,并且其中所述第二透明导电氧化物层和所述第二种子层具有 不同的电导率。
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公开(公告)号:US20160181454A1
公开(公告)日:2016-06-23
申请号:US14978905
申请日:2015-12-22
Applicant: LG ELECTRONICS INC.
Inventor: Jeonghun SON , Kangseok MOON , Kwangyoung LIM , Sehwon AHN
IPC: H01L31/05 , H01L31/0224 , H01L31/18 , H01L31/048
Abstract: A solar cell module and a method for manufacturing the same are discussed. The solar cell module includes a front transparent substrate and a back substrate positioned opposite each other, a plurality of solar cells positioned between the front transparent substrate and the back substrate, each solar cell including a semiconductor substrate and first and second electrodes, the first and second electrodes being separated from each other on a back surface of the semiconductor substrate and each extending in a first direction, a first conductive line connected to the first electrode included in the each solar cell through a conductive adhesive, a second conductive line connected to the second electrode included in the each solar cell through the conductive adhesive, a first encapsulant positioned between the solar cells and the front transparent substrate, and a second encapsulant positioned between the solar cells and the back substrate.
Abstract translation: 讨论了太阳能电池模块及其制造方法。 太阳能电池模块包括前透明基板和相对定位的背基板,位于前透明基板和后基板之间的多个太阳能电池,每个太阳能电池包括半导体基板和第一和第二电极,第一和第二电极 第二电极在半导体衬底的背表面上彼此分离并且每个在第一方向上延伸;第一导电线,其通过导电粘合剂连接到每个太阳能电池中包括的第一电极;第二导线, 通过导电粘合剂包括在每个太阳能电池中的第二电极,位于太阳能电池和前透明基板之间的第一密封剂和位于太阳能电池和后基板之间的第二密封剂。
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公开(公告)号:US20130252371A1
公开(公告)日:2013-09-26
申请号:US13671289
申请日:2012-11-07
Applicant: LG ELECTRONICS INC.
Inventor: Soohyun KIM , Hyun LEE , Jinwon CHUNG , Sehwon AHN
IPC: H01L31/20
CPC classification number: H01L31/022466 , H01L31/022483 , H01L31/02366 , H01L31/1884 , Y02E10/50
Abstract: A method for manufacturing a thin film solar cell includes depositing a front electrode on a substrate in a chamber, etching the front electrode formed on the substrate to form an uneven portion on the surface of the front electrode, forming a photoelectric conversion unit on the front electrode, and forming a back electrode on the photoelectric conversion unit. The depositing of the front electrode includes depositing the front electrode while reducing a process pressure of the chamber from a first pressure to a second pressure lower than the first pressure. The etching of the front electrode form the uneven portion of the front electrode so that a top portion of the uneven portion includes a portion formed at the second pressure.
Abstract translation: 一种薄膜太阳能电池的制造方法,其特征在于,在前述电极的基板的表面上形成前面的电极,在前述电极的表面形成凹凸部, 电极,并在光电转换单元上形成背电极。 前电极的沉积包括沉积前电极,同时将室的处理压力从第一压力降低到低于第一压力的第二压力。 前电极的蚀刻形成前电极的不平坦部分,使得不平坦部分的顶部包括形成在第二压力下的部分。
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公开(公告)号:US20170222071A1
公开(公告)日:2017-08-03
申请号:US15416673
申请日:2017-01-26
Applicant: LG ELECTRONICS INC.
Inventor: Kwangsun JI , Sehwon AHN
IPC: H01L31/0224 , H01L31/18 , H01L31/0352 , H01L31/02
CPC classification number: H01L31/022441 , H01L31/02008 , H01L31/022433 , H01L31/035281 , H01L31/0682 , H01L31/18 , Y02E10/52 , Y02E10/547
Abstract: A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a semiconductor substrate, a first semiconductor region positioned at a front surface or a back surface of the semiconductor substrate and doped with impurities of a first conductive type, a first electrode connected to the first semiconductor region, and a second electrode connected to the back surface of the semiconductor substrate. The second electrode is formed of a metal foil, and an air gap is formed between the second electrode formed of the metal foil and the back surface of the semiconductor substrate.
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公开(公告)号:US20160190363A1
公开(公告)日:2016-06-30
申请号:US14985113
申请日:2015-12-30
Applicant: LG ELECTRONICS INC.
Inventor: Kwangyoung LIM , Kangseok MOON , Jeonghun SON , Sehwon AHN
IPC: H01L31/0224 , H01L31/0216
CPC classification number: H01L31/022425 , H01L31/0504 , H01L31/0508 , H01L31/0516 , H01L31/068 , Y02E10/547
Abstract: A solar cell module and a method for manufacturing the same are disclosed. The method for manufacturing the solar cell module includes applying a low melting point metal on an electrode included in each of a plurality of solar cells, melting the low melting point metal to form a contact layer on the electrode, generating an ultrasonic vibration in the contact layer to remove a surface oxide layer formed on a surface of the electrode, melting a surface metal of the electrode and the contact layer to form a metal connection layer on the surface of the electrode, and connecting the metal connection layer to an interconnector.
Abstract translation: 公开了太阳能电池模块及其制造方法。 太阳能电池模块的制造方法包括在多个太阳能电池单元中包含的电极上施加低熔点金属,熔化低熔点金属,在电极上形成接触层,在接触中产生超声波振动 去除形成在电极表面上的表面氧化物层,熔化电极的表面金属和接触层,以在电极的表面上形成金属连接层,并将金属连接层连接到互连器。
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公开(公告)号:US20140360571A1
公开(公告)日:2014-12-11
申请号:US14297330
申请日:2014-06-05
Applicant: LG ELECTRONICS INC
Inventor: Kwangsun JI , Seungjik LEE , Sehwon AHN
IPC: H01L31/0224 , H01L31/0376 , H01L31/18
CPC classification number: H01L31/022441 , H01L21/3003 , H01L31/0682 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
Abstract: A manufacturing method of a solar cell is discussed. The manufacturing method of the solar cell includes forming a tunneling layer on one surface of a semiconductor substrate, forming a semiconductor layer on the tunneling layer, doping the semiconductor layer with a first conductive dopant and a second conductive dopant to form a first conductive semiconductor layer and a second conductive semiconductor layer, and diffusing hydrogen into the first and second conductive semiconductor layers to hydrogenate the first and second conductive semiconductor layers.
Abstract translation: 讨论太阳能电池的制造方法。 太阳能电池的制造方法包括在半导体衬底的一个表面上形成隧道层,在隧道层上形成半导体层,用第一导电掺杂剂和第二导电掺杂剂掺杂半导体层,以形成第一导电半导体层 和第二导电半导体层,并且将氢扩散到第一和第二导电半导体层中以氢化第一和第二导电半导体层。
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公开(公告)号:US20140311558A1
公开(公告)日:2014-10-23
申请号:US14243560
申请日:2014-04-02
Applicant: LG ELECTRONICS INC.
Inventor: Seungjik LEE , Sehwon AHN
IPC: H01L31/068 , H01L31/18
CPC classification number: H01L31/0682 , H01L31/035281 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
Abstract: A solar cell includes a semiconductor substrate containing impurities of a first conductive type, a back surface field region which is positioned on a back surface of the semiconductor substrate and is doped more than the semiconductor substrate with impurities of the first conductive type, an emitter region which is on the back surface of the semiconductor substrate adjacent to the back surface field region and contains impurities of a second conductive type different than the first conductive type, a metal layer which contains impurities of the second conductive type and on a back surface of the emitter region, a back passivation layer exposing a portion of the back surface field region and a portion of the metal layer.
Abstract translation: 太阳能电池包括含有第一导电类型杂质的半导体衬底,位于半导体衬底的背面上的背面场区域,并且掺杂多于具有第一导电类型杂质的半导体衬底,发射极区域 其位于与背面场区域相邻的半导体衬底的背面上,并且包含不同于第一导电类型的第二导电类型的杂质,含有第二导电类型的杂质的金属层和在第二导电类型的背面上的金属层 发射极区域,暴露背面场区域的一部分和金属层的一部分的背面钝化层。
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公开(公告)号:US20160197204A1
公开(公告)日:2016-07-07
申请号:US14988513
申请日:2016-01-05
Applicant: LG ELECTRONICS INC.
Inventor: Seungjik LEE , Kwangsun JI , Yujin LEE , Sehwon AHN
IPC: H01L31/0288 , H01L31/077 , H01L31/0352 , H01L31/18 , H01L31/036
CPC classification number: H01L31/022441 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02P70/521
Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a crystalline semiconductor substrate containing impurities of a first conductive type, a tunnel layer positioned on the crystalline semiconductor substrate, a semiconductor layer which is formed on the tunnel layer, has a crystallinity less than the crystalline semiconductor substrate, and includes a first doped region of a second conductive type opposite the first conductive type and a second doped region containing impurities of the first conductive type at a higher concentration than that of the crystalline semiconductor substrate, a first electrode connected to the first doped region, and a second electrode connected to the second doped region.
Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池包括含有第一导电类型杂质的晶体半导体衬底,位于晶体半导体衬底上的隧道层,在隧道层上形成的半导体层的结晶度小于结晶半导体衬底,并且包括 具有与第一导电类型相反的第二导电类型的第一掺杂区和比第一掺杂区连接的第一电极和第二掺杂区,第二掺杂区含有比第一掺杂区连接的第一电极的第一导电类型的杂质更高的浓度; 电极连接到第二掺杂区域。
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公开(公告)号:US20190334041A1
公开(公告)日:2019-10-31
申请号:US16506644
申请日:2019-07-09
Applicant: LG ELECTRONICS, INC.
Inventor: Yujin LEE , Kwangsun JI , Seungjik LEE , Sehwon AHN
IPC: H01L31/0224 , H01L31/0368 , H01L31/0745 , H01L31/18 , H01L31/0312 , H01L31/20 , H01L31/0376 , H01L31/0747
Abstract: A method for manufacturing a solar cell can include forming a tunnel layer on a back surface of a semiconductor substrate; forming an amorphous silicon layer on the tunnel layer; crystallizing the amorphous silicon layer into a crystalline silicon layer; performing a diffusion process to form a doped region in the crystalline silicon layer; forming an insulating layer on the crystalline silicon layer; and forming an electrode contacting with the crystalline silicon layer through an opening of the insulating layer.
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