公开(公告)号：US20190326451A1

公开(公告)日：2019-10-24

申请号：US16456575

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon CHANG ,  Kyungjin SHIM ,  Hyunjung PARK ,  Junghoon CHOI

IPC: H01L31/0216 ,  H01L31/0747

Abstract: A solar cell includes a silicon substrate, an emitter area formed on a front surface of the silicon substrate, a tunneling oxide layer formed on a back surface of the silicon substrate, a back surface field area formed on the tunneling oxide layer and formed of a polycrystalline silicon layer, a back passivation film formed on the back surface field area and having an opening, and a back electrode connected to the back surface field area via the opening.

公开(公告)号：US20150357507A1

公开(公告)日：2015-12-10

申请号：US14734870

申请日：2015-06-09

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung YANG ,  Junghoon CHOI ,  Changseo PARK ,  Hyungjin KWON

IPC: H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

Abstract: Discussed is a method for manufacturing a solar cell. The method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer including depositing a semiconductor material; and forming an electrode connected to the semiconductor layer. The tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure.

Abstract translation: 讨论的是制造太阳能电池的方法。 该方法包括在半导体衬底上形成隧穿层; 在隧道层上形成半导体层，其中半导体层的形成包括沉积半导体材料; 以及形成连接到所述半导体层的电极。 隧道层在比室温高且压力低于大气压的温度下形成。

公开(公告)号：US20150263188A1

公开(公告)日：2015-09-17

申请号：US14720527

申请日：2015-05-22

Applicant: LG ELECTRONICS INC.

Inventor： Wonseok CHOI ,  Kwangsun JI ,  Heonmin LEE ,  Hojung SYN ,  Junghoon CHOI ,  Hyunjin YANG

IPC: H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02366 ,  H01L31/0288 ,  H01L31/03529 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547

Abstract: A solar cell is discussed, and includes a substrate; a first field region; a first electrode directly formed on an emitter region; and a second electrode directly formed on a second field region, wherein a second passivation layer comprises a first back passivation portion and a second back passivation portion. Furthermore, the first back passivation portion is merely positioned between the emitter region and the substrate and the second field region and the substrate, and the second back passivation portion is positioned between the emitter region and the second field region, and wherein the first back passivation portion positioned between the emitter region and the substrate is physically separated from first back passivation portion positioned between the second field region and the substrate.

Abstract translation: 讨论了太阳能电池，并且包括基板; 第一场地; 直接形成在发射极区域上的第一电极; 以及直接形成在第二场区上的第二电极，其中第二钝化层包括第一后​​钝化部分和第二后钝化部分。 此外，第一背面钝化部分仅位于发射极区域和衬底之间，并且第二场区域和衬底之间，并且第二背部钝化部分位于发射极区域和第二场区域之间，并且其中第一背面钝化部分 位于发射极区域和衬底之间的部分与位于第二场区域和衬底之间的第一背面钝化部分物理分离。

公开(公告)号：US20140338747A1

公开(公告)日：2014-11-20

申请号：US14278827

申请日：2014-05-15

Applicant: LG ELECTRONICS INC.

Inventor： Minho CHOI ,  Hyunjung PARK ,  Junghoon CHOI ,  Youngho CHOE

IPC: H01L31/068 ,  H01L31/18

Abstract: Discussed is a solar cell including a semiconductor substrate including a base area and a doping area, a doping layer formed on the semiconductor substrate, the doping layer having a conductive type different from the doping area, a tunneling layer interposed between the doping layer and the semiconductor substrate, a first electrode connected to the doping area, and a second electrode connected to the doping layer.

Abstract translation: 讨论了包括基底区域和掺杂区域的半导体衬底的太阳能电池，形成在半导体衬底上的掺杂层，具有不同于掺杂区域的导电类型的掺杂层，插入在掺杂层和掺杂层之间的隧穿层 半导体衬底，连接到掺杂区域的第一电极和连接到掺杂层的第二电极。

公开(公告)号：US20220393042A1

公开(公告)日：2022-12-08

申请号：US17889200

申请日：2022-08-16

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon CHANG ,  Kyungjin SHIM ,  Hyunjung PARK ,  Junghoon CHOI

IPC: H01L31/0216 ,  H01L31/0747 ,  H01L31/18

Abstract: Discussed is a solar cell including a silicon substrate, an emitter area formed on a front surface of the silicon substrate, a tunneling oxide layer formed on a back surface of the silicon substrate, a back surface field area formed on the tunneling oxide layer and formed of a polycrystalline silicon layer, a front passivation film on the emitter area, a front electrode connected to the emitter area by penetrating through the front passivation film, a back passivation film formed on the back surface field area and having an opening and a back electrode connected to the back surface field area via the opening.

公开(公告)号：US20220246777A1

公开(公告)日：2022-08-04

申请号：US17617641

申请日：2020-04-09

Applicant: LG ELECTRONICS INC.

Inventor： Chungyi KIM ,  Junghoon CHOI ,  Jeongkyu KIM

IPC: H01L31/048

Abstract: A method for manufacturing a graphic cover substrate for a solar cell panel according to an embodiment of the present disclosure includes applying a cover layer, which is forming the cover layer composed of a ceramic material layer on a transfer member; transferring, which is transferring the cover layer to a base member; and reinforcing, which is forming a cover portion by reinforcing or semi-reinforcing the base member on which the cover layer is formed.

公开(公告)号：US20190280138A1

公开(公告)日：2019-09-12

申请号：US16294605

申请日：2019-03-06

Applicant: LG ELECTRONICS INC.

Inventor： Chungyi KIM ,  Minpyo KIM ,  Junghoon CHOI

IPC: H01L31/048 ,  H01L31/05 ,  H02S20/22

Abstract: A solar cell panel can include a solar cell; a sealing member for sealing the solar cell; a first cover member disposed on the sealing member at one side of the solar cell; and a second cover member disposed on the sealing member at another side of the solar cell, in which the first cover member includes a base member and a colored portion having a light transmittance lower than a light transmittance of the base member, the first cover member constituting a colored area, and the colored portion includes at least two layers each formed of an oxide ceramic composition and having different colors or different light transmittances.

公开(公告)号：US20190326452A1

公开(公告)日：2019-10-24

申请号：US16456607

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon CHANG ,  Kyungjin SHIM ,  Hyunjung PARK ,  Junghoon CHOI

IPC: H01L31/0216 ,  H01L31/0747

Abstract: A bi-facial solar cell includes a silicon substrate, a first doped region formed on a front surface of the silicon substrate, an oxide layer formed on a back surface of the silicon substrate, a second doped region formed on the oxide layer and formed of a polycrystalline silicon layer, a first passivation layer formed on the first doped region, a first anti-reflection layer formed on the first passivation layer, a plurality of first finger electrodes connected to the first doped region through a first opening in the first passivation layer and the first anti-reflection layer, a second passivation layer formed on the second doped region, a second anti-reflection layer formed on the second passivation layer, and a plurality of second finger electrodes connected to the second doped region through a second opening in the second passivation layer and the second anti-reflection layer.

公开(公告)号：US20170084759A1

公开(公告)日：2017-03-23

申请号：US15367811

申请日：2016-12-02

Applicant: LG ELECTRONICS INC.

Inventor： Wonseok CHOI ,  Kwangsun JI ,  Heonmin LEE ,  Hojung SYN ,  Junghoon CHOI ,  Hyunjin YANG

IPC: H01L31/0216 ,  H01L31/18 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/0236

CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02366 ,  H01L31/0288 ,  H01L31/03529 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547

Abstract: A solar cell is discussed. The solar cell includes a silicon substrate; a front passivation layer positioned on a front surface of the silicon substrate; an n-doped layer positioned on the front surface of the silicon substrate; an anti-reflection layer positioned on the n-doped layer; a p-doped region positioned on a rear surface of the silicon substrate; an n-doped region positioned on the rear surface of the silicon substrate and spaced apart from the p-doped region; a rear passivation layer positioned on the rear surface of the silicon substrate, the rear passivation layer including: a first portion positioned between the p-doped region and the silicon substrate; a second portion positioned between the n-doped region and the silicon substrate, the second portion being space apart from the first potion; and a third portion disposed between the first portion and the second portion; a first electrode directly contacted to the p-doped region; and a second electrode directly contacted to the n-doped region.

公开(公告)号：US20160225940A1

公开(公告)日：2016-08-04

申请号：US15097897

申请日：2016-04-13

Applicant: LG ELECTRONICS INC.

Inventor： Sunho KIM ,  Heonmin LEE ,  Kwangsun JI ,  Youngjoo EO ,  Junghoon CHOI ,  Sehwon AHN

IPC: H01L31/20 ,  H01L31/18

CPC classification number: H01L31/03762 ,  C25D7/126 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/1884 ,  H01L31/20 ,  H01L31/202 ,  H05K3/188 ,  H05K3/246 ,  H05K2201/0108 ,  H05K2201/0326 ,  Y02E10/50

Abstract: Discussed is a method of manufacturing a solar cell including preparing a single crystalline silicon substrate having a first conductive type impurity; forming a non-single crystalline silicon emitter layer having a second conductive type impurity opposite to the first conductive type impurity on a first surface of the single crystalline silicon substrate; forming a first transparent conductive oxide layer on the first surface of the single crystalline silicon substrate; forming a first electrode electrically connected to the first transparent conductive oxide layer; and forming a second electrode electrically connected to the single crystalline silicon substrate, wherein the forming of the first electrode includes; forming a first seed layer on the first transparent conductive oxide layer, and forming a first plating layer over the first seed layer by plating a first conductive material.

Abstract translation: 讨论了制造太阳能电池的方法，包括制备具有第一导电类型杂质的单晶硅衬底; 在单晶硅衬底的第一表面上形成具有与第一导电类型杂质相反的第二导电类型杂质的非单晶硅发射极层; 在单晶硅衬底的第一表面上形成第一透明导电氧化物层; 形成与第一透明导电氧化物层电连接的第一电极; 以及形成与所述单晶硅衬底电连接的第二电极，其中所述第一电极的形成包括： 在所述第一透明导电氧化物层上形成第一晶种层，以及通过镀覆第一导电材料在所述第一晶种层上形成第一镀层。