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    METHOD FOR MANUFACTURING SOLAR CELL
    1.
    发明申请
    METHOD FOR MANUFACTURING SOLAR CELL 审中-公开
    制造太阳能电池的方法

    公开(公告)号：US20160211403A1

    公开(公告)日：2016-07-21

    申请号：US14997196

    申请日：2016-01-15

    Applicant: LG ELECTRONICS INC.

    Inventor： Mann YI ,  Jeongkyu KIM ,  Jinsung KIM

    IPC: H01L31/18 ,  H01L31/0216

    CPC classification number: H01L31/18 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method for manufacturing a solar cell is disclosed. The disclosed method includes conductive region formation of forming a first-conduction-type region at one surface of a semiconductor substrate and a second-conduction-type region at another surface of the semiconductor substrate, and electrode formation of forming a first electrode connected to the first-conduction-type region and a second electrode connected to the second-conduction-type region. In the conductive region formation, the first-conduction-type region is formed by forming a dopant layer containing a first-conduction-type dopant over the one surface of the semiconductor substrate, and heat-treating the dopant layer, and the second-conduction-type region is formed by ion-implanting a second-conduction-type dopant into the semiconductor substrate at the another surface of the semiconductor substrate.

    Abstract translation: 公开了一种制造太阳能电池的方法。 所公开的方法包括在半导体衬底的一个表面处形成第一导电类型区域的导电区域形成和在半导体衬底的另一表面处的第二导电类型区域，以及形成连接到半导体衬底的第一电极的电极形成 第一导电型区域和与第二导电型区域连接的第二电极。 在导电区形成中，通过在半导体衬底的一个表面上形成含有第一导电型掺杂剂的掺杂剂层，并对掺杂剂层进行热处理，形成第一导电型区域 型区域通过在半导体衬底的另一个表面处将半导体衬底中的第二导电型掺杂剂离子注入而形成。

    SOLAR CELL
    2.
    发明申请
    SOLAR CELL 审中-公开
    太阳能电池

    公开(公告)号：US20150090323A1

    公开(公告)日：2015-04-02

    申请号：US14478935

    申请日：2014-09-05

    Applicant: LG ELECTRONICS INC.

    Inventor： Jeongkyu KIM ,  Sunghyun HWANG ,  Daeyong LEE

    IPC: H01L31/0352

    Abstract: Discussed is a solar cell including a semiconductor substrate comprising a base region, an emitter region having a conductive type opposite to that of the base region, and a back surface field region having the same conductive type as the base region and a higher doping concentration than the base region, and a first electrode and a second electrode respectively connected to the emitter region and the back surface field region, wherein the base region has a specific resistance of 0.3 Ωcm to 2.5 Ωcm.

    Abstract translation: 讨论了包括半导体衬底的太阳能电池，该半导体衬底包括基极区域，具有与基极区域相反的导电类型的发射极区域和与基极区域具有相同导电类型的背表面场区域，并且掺杂浓度高于 所述基极区域以及分别连接到所述发射极区域和所述背面场区域的第一电极和第二电极，其中所述基极区域的电阻率为0.3Ω·cm·cm〜2.5Ω·cm·cm。

    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：US20170047459A1

    公开(公告)日：2017-02-16

    申请号：US15235955

    申请日：2016-08-12

    Applicant: LG ELECTRONICS INC.

    Inventor： Mann YI ,  Daeyong LEE ,  Jeongkyu KIM ,  Junyong AHN

    IPC: H01L31/0392 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/068

    CPC classification number: H01L31/03921 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A solar cell and a method for manufacturing the same are disclosed. The method for manufacturing the solar cell includes injecting impurities of a second conductive type opposite a first conductive type into an entire first surface of a semiconductor substrate containing impurities of the first conductive type, the semiconductor substrate having the first surface, a side surface, and a second surface opposite the first surface, forming a doping barrier layer on the entire first surface and the entire side surface of the semiconductor substrate, and at an edge portion of the second surface of the semiconductor substrate, injecting the impurities of the first conductive type into the second surface of the semiconductor substrate at which the doping barrier layer is not formed, at a higher concentration than the semiconductor substrate, performing a thermal process on the semiconductor substrate to simultaneously form an emitter region of the second conductive type at the entire first and side surfaces of the semiconductor substrate and a back surface field region of the first conductive type at the second surface of the semiconductor substrate, and removing the doping barrier layer.

    Abstract translation: 公开了一种太阳能电池及其制造方法。 制造太阳能电池的方法包括将含有第一导电类型的第二导电类型的杂质注入包含第一导电类型的杂质的半导体衬底的整个第一表面，具有第一表面的半导体衬底，侧表面和 与第一表面相对的第二表面，在半导体衬底的整个第一表面和整个侧表面上形成掺杂阻挡层，并且在半导体衬底的第二表面的边缘部分处，注入第一导电类型的杂质 在没有形成掺杂阻挡层的半导体衬底的第二表面中，以比半导体衬底更高的浓度进行热处理，在半导体衬底上进行热处理，同时在整个第一衬底上形成第二导电类型的发射极区 和半导体衬底的侧表面和背面fie 在该半导体衬底的第二表面处的第一导电类型的区域，以及去除该掺杂阻挡层。

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