公开(公告)号：US20160013330A1

公开(公告)日：2016-01-14

申请号：US14861789

申请日：2015-09-22

Applicant: LG ELECTRONICS INC.

Inventor： Juhong YANG ,  Jinah KIM ,  Jeongbeom NAM ,  Dohwan YANG ,  Indo CHUNG ,  Ilhyoung JUNG ,  Hyungjin KWON

IPC: H01L31/0216 ,  H01L31/0368 ,  H01L31/0236

CPC classification number: H01L31/02168 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035272 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547

Abstract: A solar cell can include a substrate of a first conductive type; an emitter region of a second conductive type opposite the first conductive type and which forms a p-n junction along with the substrate; an anti-reflection layer positioned on the emitter region; a front electrode part electrically connected to the emitter region; and a back electrode part electrically connected to the substrate, wherein the substrate including a first area formed of single crystal silicon and a second area formed of polycrystalline silicon, wherein a thickness of the anti-reflection layer positioned on the first area is less than a thickness of the anti-reflection layer positioned on the second area, wherein a roughness of an incident surface of the substrate in the first area is different from a roughness of the incident surface of the substrate in the second area, and wherein the emitter region is entirely formed on the incident surface of the substrate.

Abstract translation: 太阳能电池可以包括第一导电类型的衬底; 与第一导电类型相反并且与衬底一起形成p-n结的第二导电类型的发射极区域; 位于发射极区域上的防反射层; 电连接到发射极区域的前电极部分; 以及电连接到所述基板的背面电极部，其中，所述基板包括由单晶硅形成的第一区域和由多晶硅形成的第二区域，其中位于所述第一区域上的所述防反射层的厚度小于 位于第二区域的防反射层的厚度，其中第一区域中的基板的入射表面的粗糙度不同于第二区域中的基板的入射表面的粗糙度，并且其中发射极区域 完全形成在基板的入射表面上。

公开(公告)号：US20150357507A1

公开(公告)日：2015-12-10

申请号：US14734870

申请日：2015-06-09

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung YANG ,  Junghoon CHOI ,  Changseo PARK ,  Hyungjin KWON

IPC: H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

Abstract: Discussed is a method for manufacturing a solar cell. The method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer including depositing a semiconductor material; and forming an electrode connected to the semiconductor layer. The tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure.

Abstract translation: 讨论的是制造太阳能电池的方法。 该方法包括在半导体衬底上形成隧穿层; 在隧道层上形成半导体层，其中半导体层的形成包括沉积半导体材料; 以及形成连接到所述半导体层的电极。 隧道层在比室温高且压力低于大气压的温度下形成。

公开(公告)号：US20190140117A1

公开(公告)日：2019-05-09

申请号：US16242561

申请日：2019-01-08

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung YANG ,  Junghoon CHOI ,  Changseo PARK ,  Hyungjin KWON

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0745

Abstract: A method for manufacturing a solar cell, the method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer includes depositing a semiconductor material; forming a capping layer on the semiconductor layer; and forming an electrode connected to the semiconductor layer, wherein the tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure, wherein a pressure of the forming of the semiconductor layer is smaller than the pressure of the forming of the tunneling layer, wherein the forming of the semiconductor layer further comprises doping the semiconductor layer with dopants, and wherein the capping layer is formed between the forming of the semiconductor layer and the forming of the electrode.

公开(公告)号：US20160204300A1

公开(公告)日：2016-07-14

申请号：US15076111

申请日：2016-03-21

Applicant: LG ELECTRONICS INC.

Inventor： Daeyong LEE ,  Jonghwan KIM ,  Hyungjin KWON

IPC: H01L31/18

CPC classification number: H01L31/1864 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547

Abstract: A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a substrate of a first conductive type; an emitter layer of a second conductive type opposite the first conductive type on the substrate; a first electrode electrically connected to the emitter layer; a passivation layer on the substrate; a second electrode conductive layer on the passivation layer, the second electrode conductive layer including at least one second electrode electrically connected to the substrate through the passivation layer; and a second electrode current collector electrically connected to the second electrode conductive layer.

Abstract translation: 公开了一种太阳能电池及其制造方法。 太阳能电池包括第一导电类型的衬底; 在所述衬底上的与所述第一导电类型相反的第二导电类型的发射极层; 电连接到发射极层的第一电极; 衬底上的钝化层; 所述钝化层上的第二电极导电层，所述第二电极导电层包括通过所述钝化层电连接到所述衬底的至少一个第二电极; 以及与第二电极导电层电连接的第二电极集电体。

公开(公告)号：US20180122981A1

公开(公告)日：2018-05-03

申请号：US15858016

申请日：2017-12-29

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung YANG ,  Hyungjin KWON ,  Chungyi KIM ,  Junghoon CHOI

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0216 ,  H01L21/02

CPC classification number: H01L31/1868 ,  H01L21/02131 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547

Abstract: A method of manufacturing a solar cell, the method includes forming a protective film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon, wherein the forming of the protective film includes a heat treatment process performed at a heat treatment temperature of approximately 600 degrees Celsius or more under a gas atmosphere including nitrogen, and wherein the heat treatment process includes: a main section, during which the heat treatment temperature is maintained, a temperature increase section before the main section, during which an increase in temperature occurs from an introduction temperature to the heat treatment temperature, and a temperature reduction section after the main section, during which a decrease in temperature occurs from the heat treatment temperature to a discharge temperature.

公开(公告)号：US20160365472A1

公开(公告)日：2016-12-15

申请号：US15178274

申请日：2016-06-09

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung YANG ,  Hyungjin KWON ,  Chungyi KIM ,  Junghoon CHOI

IPC: H01L31/18

CPC classification number: H01L31/1868 ,  H01L21/02131 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547

Abstract: Disclosed is a method of manufacturing a solar cell. The method includes forming a protective film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.

Abstract translation: 公开了一种制造太阳能电池的方法。 该方法包括使用半导体衬底上的绝缘膜形成保护膜，该半导体衬底包括第一导电类型的基底区域并由晶体硅形成。 保护膜的形成包括在具有卤素元素的卤素气体的气体气氛下，在600℃以上的热处理温度下进行的热处理工序。