Abstract:
Disclosed is a method for automatically controlling a focal point of a digital optical device, which: performs the steps of a focal point mode for performing a high-speed AF operation, and function processing high-capacity function image data; configures a function mode for detecting function focal point data and comparing it to a critical range; automatically performs switching between the focal point mode and the function mode by using an optical device; yields high-capacity function image data having an adjusted focal point in an environment in which the optical device is used where focal point distances change rapidly when a subject or the user of the optical device is moving; and performs required commands at high speed through the optical device when the user of the storing optical device inputs a required command once.
Abstract:
An array substrate includes a base substrate, a plurality of storage voltage lines, a plurality of connecting lines, and a common voltage applying section. Pixels are formed in regions defined by a plurality of gate lines extending along a first direction and data lines extending along a second direction. The connecting lines are connected to the storage voltage lines that are formed on adjacent pixels of pixels arranged in the second direction. The common voltage applying section applies a common voltage to the storage voltage lines that are formed in a portion of the pixels arranged in the first direction. Thus, a substantially uniform current may be applied to the display area to decrease the distortion of the common voltage, thereby increasing a liquid crystal display device's display quality.
Abstract:
An array substrate includes a substrate including a display area and a peripheral area surrounding the display area, data lines disposed in the display area and including a portion thereof extending from the display area into the peripheral area at a first side of a periphery of the display area, and a repair line disposed in the peripheral area and crossing the portion of the data lines extending into the peripheral area. The array substrate also includes a static electricity diode part electrically connected to the repair line and a first data line of the data lines.
Abstract:
A thin film transistor substrate capable of appropriately maintaining driving performance even when there is a difference between manufacturing processes and a method of manufacturing the same. The thin film transistor substrate includes: a gate electrode formed on an insulating substrate; a semiconductor layer formed on the gate electrode; and a plurality of thin film transistors each having a source electrode and a drain electrode that are formed on the gate electrode and the semiconductor layer so as to be spaced apart from each other. At least one of the plurality of thin film transistors is a dummy thin film transistor that does not have the semiconductor layer between the source electrode and the drain electrode.
Abstract:
A gate driving circuit and a display apparatus having the gate driving circuit include a pull-up part and a carry part pull up a present gate signal and a present carry signal, respectively, to a first clock during a first period within one frame. A pull-down part receives a next gate signal to discharge the present gate signal to a source power voltage. A pull-up driving part is connected to control terminals of the carry part and pull-up part (Q-node) to turn the carry part and pull-up part on and off. A floating preventing part prevents an output terminal of the carry part from being floated in response to the first clock during a second period within the one frame.
Abstract:
A thin film transistor array panel is provided, which includes: a gate line, a gate insulating layer, and a semiconductor layer sequentially formed on a substrate; a data line and a drain electrode formed at least on the semiconductor layer; a first passivation layer formed on the data line and the drain electrode and having a first contact hole exposing the drain electrode at least in part; a second passivation layer formed on the first passivation layer and having a second contact hole that is disposed on the first contact hole and has a first bottom edge placed outside the first contact hole and a second bottom edge placed inside the first contact hole; and a pixel electrode formed on the second passivation layer and connected to the drain electrode through the first and the second contact holes.
Abstract:
A gate drive circuit includes a shift register having stages connected to each other in series. An (m)-th stage (‘m’ is a natural number) includes an output part, a discharging part, a first holding part and a second holding part. The output part outputs the first clock signal as a gate signal in response to a first clock signal provided from an external device and discharges the gate signal in response to a second input signal. The output part includes a first transistor having a first channel length. The discharging part discharges a signal of the first node to the second voltage level. The first holding part maintains a signal of the first node at a level of the gate signal, and is discharged to the second voltage level. The first holding part includes a second transistor having a second channel length that is longer than the first channel length. The second holding part maintains a signal of the first node at a level of the second voltage level.
Abstract:
Provided is a supporting apparatus for a display device. The supporting apparatus includes a stationary unit fixed at a fixing location, a device supporting unit supporting the display device, a connection unit connecting the stationary unit to the device supporting unit and guiding motion of the device supporting unit, and a tilting frictional unit interposed between the connection unit and the device supporting unit and guiding tilting motion of the device supporting unit in a vertical direction. The tilting frictional unit includes a first arc member fixed to the connection unit and a second arc member fixed to the device supporting unit. The first and second arc members contact each other to generate frictional force.
Abstract:
A thin film transistor array panel is provided, which includes: a gate line, a gate insulating layer, and a semiconductor layer sequentially formed on a substrate; a data line and a drain electrode formed at least on the semiconductor layer; a first passivation layer formed on the data line and the drain electrode and having a first contact hole exposing the drain electrode at least in part; a second passivation layer formed on the first passivation layer and having a second contact hole that is disposed on the first contact hole and has a first bottom edge, placed outside the first contact hole and a second bottom edge placed inside the first contact hole; and a pixel electrode formed on the second passivation layer and connected to the drain electrode through the first and the second contact holes.
Abstract:
A thin film array panel is provided, which includes: a gate line formed on a substrate; a first insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a data line formed on the gate insulating layer and intersecting the gate line; a drain electrode formed at least on the semiconductor layer; a conductor arranged in parallel to the data line; a second insulating layer formed on the data line, the drain electrode, and the conductor and having a first contact hole exposing a portion of the drain electrode; and a pixel electrode formed on the second insulating layer, connected to the drain electrode through the first contact hole, fully covering the data line.