发明授权
- 专利标题: Thin film transistor array panel and manufacturing method thereof
- 专利标题(中): 薄膜晶体管阵列面板及其制造方法
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申请号: US11674457申请日: 2007-02-13
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公开(公告)号: US07955908B2公开(公告)日: 2011-06-07
- 发明人: Hye-Young Ryu , Young-Hoon Yoo , Jang-Soo Kim , Sung-Man Kim , Kyung-Wook Kim , Hyang-Shik Kong , Young-Goo Song
- 申请人: Hye-Young Ryu , Young-Hoon Yoo , Jang-Soo Kim , Sung-Man Kim , Kyung-Wook Kim , Hyang-Shik Kong , Young-Goo Song
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR2003-55419 20030811; KR2003-55420 20030811
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A thin film transistor array panel is provided, which includes: a gate line, a gate insulating layer, and a semiconductor layer sequentially formed on a substrate; a data line and a drain electrode formed at least on the semiconductor layer; a first passivation layer formed on the data line and the drain electrode and having a first contact hole exposing the drain electrode at least in part; a second passivation layer formed on the first passivation layer and having a second contact hole that is disposed on the first contact hole and has a first bottom edge placed outside the first contact hole and a second bottom edge placed inside the first contact hole; and a pixel electrode formed on the second passivation layer and connected to the drain electrode through the first and the second contact holes.
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