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    METHOD OF FABRICATING A COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) IMAGE SENSOR
    3.
    发明申请
    METHOD OF FABRICATING A COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) IMAGE SENSOR 有权
    补充金属氧化物半导体（CMOS）图像传感器的方法

    公开(公告)号：US20110086459A1

    公开(公告)日：2011-04-14

    申请号：US12970547

    申请日：2010-12-16

    申请人： Won-Joon Ho ,  Kyung-Lak Lee

    发明人： Won-Joon Ho ,  Kyung-Lak Lee

    IPC分类号： H01L31/18

    CPC分类号： H01L27/14603 ,  H01L27/14683 ,  H01L29/7851 ,  H01L29/7853 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with the active region, a blocking layer interposed between the active region and the gate electrode in which the blocking layer is formed on an intersection region of the active region and the gate electrode, and a metal contact electrically connected to the gate electrode, wherein the metal contact is not electrically connected to the active region by the blocking layer.

    摘要翻译： 提供了CMOS图像传感器及其制造方法。 具有复位晶体管，选择晶体管，驱动晶体管和光电二极管的CMOS图像传感器包括线状的有源区，与有源区相交的驱动晶体管的栅电极，插入 在有源区和栅电极之间形成阻挡层，在有源区和栅电极的交叉区域上形成有与栅电极电连接的金属触点，其中金属触点不与活性区电连接 区域由阻挡层。

    CMOS image sensor and method for fabricating the same
    4.
    发明授权
    CMOS image sensor and method for fabricating the same 失效
    CMOS图像传感器及其制造方法

    公开(公告)号：US06459131B1

    公开(公告)日：2002-10-01

    申请号：US09947690

    申请日：2001-09-06

    申请人： Kyung-Lak Lee

    发明人： Kyung-Lak Lee

    IPC分类号： H01L310232

    CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14621

    摘要： A CMOS image sensor for preventing a formation of scum and overlaps of neighboring color filters is provided. The image sensor includes: a semiconductor structure; a first color filter formed on the semiconductor structure, wherein the first color filter includes a first stacked layer, the first stacked layer having a first nitride layer and a first oxide layer; a second color filter, wherein the second color filter is formed with a dyed photoresist and in contact with the first color filter; and a third color filter formed on a portion where is not overlapped with the first and the second color filter, wherein the third color filter includes a second stacked layer, the second stacked layer having a second nitride layer and a second oxide layer.

    摘要翻译： 提供了用于防止浮渣形成和相邻滤色器重叠的CMOS图像传感器。 图像传感器包括：半导体结构; 形成在所述半导体结构上的第一滤色器，其中所述第一滤色器包括第一层叠层，所述第一层叠层具有第一氮化物层和第一氧化物层; 第二滤色器，其中所述第二滤色器形成有染色光致抗蚀剂并与所述第一滤色器接触; 以及形成在与第一和第二滤色器不重叠的部分上的第三滤色器，其中所述第三滤色器包括第二堆叠层，所述第二堆叠层具有第二氮化物层和第二氧化物层。

    CMOS image sensor and method for fabrication thereof
    5.
    发明授权
    CMOS image sensor and method for fabrication thereof 有权
    CMOS图像传感器及其制造方法

    公开(公告)号：US07863658B2

    公开(公告)日：2011-01-04

    申请号：US11452296

    申请日：2006-06-14

    申请人： Won-Joon Ho ,  Kyung-Lak Lee

    发明人： Won-Joon Ho ,  Kyung-Lak Lee

    IPC分类号： H01L29/76

    CPC分类号： H01L27/14603 ,  H01L27/14683 ,  H01L29/7851 ,  H01L29/7853 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with the active region, a blocking layer interposed between the active region and the gate electrode in which the blocking layer is formed on an intersection region of the active region and the gate electrode, and a metal contact electrically connected to the gate electrode, wherein the metal contact is not electrically connected to the active region by the blocking layer.

    摘要翻译： 提供了CMOS图像传感器及其制造方法。 具有复位晶体管，选择晶体管，驱动晶体管和光电二极管的CMOS图像传感器包括线状的有源区，与有源区相交的驱动晶体管的栅电极，插入 在有源区和栅电极之间形成阻挡层，在有源区和栅电极的交叉区域上形成有与栅电极电连接的金属触点，其中金属触点不与活性区电连接 区域由阻挡层。

    Isolation layer for CMOS image sensor and fabrication method thereof
    6.
    发明授权
    Isolation layer for CMOS image sensor and fabrication method thereof 有权
    CMOS图像传感器的隔离层及其制造方法

    公开(公告)号：US07135362B2

    公开(公告)日：2006-11-14

    申请号：US10882485

    申请日：2004-06-30

    申请人： Kyung-Lak Lee

    发明人： Kyung-Lak Lee

    IPC分类号： H01L21/8238 ,  H01L21/00 ,  H01L21/336 ,  H01L31/00 ,  H01L31/113

    CPC分类号： H01L27/14643 ,  H01L27/1463 ,  H01L27/14689

    摘要： The present invention relates to an isolation layer for CMOS image sensor and a fabrication method thereof, which are capable of improving a low light level characteristic of the CMOS image sensor. The isolation layer includes: a field insulating layer formed on a predetermined portion of a substrate in the logic area to thereby define an active area and a field area; a field stop ion implantation area formed on a predetermined portion of the substrate in the pixel area, the field stop ion implantation area having a predetermined depth from a surface of the substrate to define an active area and a field area; and an oxide layer deposited on a substrate surface corresponding to the field stop ion implantation area.

    摘要翻译： 本发明涉及CMOS图像传感器的隔离层及其制造方法，其能够改善CMOS图像传感器的低光水平特性。 隔离层包括：场绝缘层，形成在逻辑区域中的基板的预定部分上，从而限定有源区域和场区域; 形成在所述像素区域中的所述基板的预定部分上的场停止离子注入区域，所述场停止离子注入区域具有从所述基板的表面预定深度以限定有源区域和场区域; 以及沉积在对应于场停止离子注入区域的衬底表面上的氧化物层。

    Method of fabricating a complementary metal oxide semiconductor (CMOS) image sensor
    7.
    发明授权
    Method of fabricating a complementary metal oxide semiconductor (CMOS) image sensor 有权
    制造互补金属氧化物半导体（CMOS）图像传感器的方法

    公开(公告)号：US08247256B2

    公开(公告)日：2012-08-21

    申请号：US12970547

    申请日：2010-12-16

    申请人： Won-Joon Ho ,  Kyung-Lak Lee

    发明人： Won-Joon Ho ,  Kyung-Lak Lee

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14603 ,  H01L27/14683 ,  H01L29/7851 ,  H01L29/7853 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with the active region, a blocking layer interposed between the active region and the gate electrode in which the blocking layer is formed on an intersection region of the active region and the gate electrode, and a metal contact electrically connected to the gate electrode, wherein the metal contact is not electrically connected to the active region by the blocking layer.

    摘要翻译： 提供了CMOS图像传感器及其制造方法。 具有复位晶体管，选择晶体管，驱动晶体管和光电二极管的CMOS图像传感器包括线状的有源区，与有源区相交的驱动晶体管的栅电极，插入 在有源区和栅电极之间形成阻挡层，在有源区和栅电极的交叉区域上形成有与栅电极电连接的金属触点，其中金属触点不与活性区电连接 区域由阻挡层。

    CMOS image sensor and method for fabrication thereof
    8.
    发明申请
    CMOS image sensor and method for fabrication thereof 有权
    CMOS图像传感器及其制造方法

    公开(公告)号：US20060284273A1

    公开(公告)日：2006-12-21

    申请号：US11452296

    申请日：2006-06-14

    申请人： Won-Joon Ho ,  Kyung-Lak Lee

    发明人： Won-Joon Ho ,  Kyung-Lak Lee

    IPC分类号： H01L27/14

    CPC分类号： H01L27/14603 ,  H01L27/14683 ,  H01L29/7851 ,  H01L29/7853 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with the active region, a blocking layer interposed between the active region and the gate electrode in which the blocking layer is formed on an intersection region of the active region and the gate electrode, and a metal contact electrically connected to the gate electrode, wherein the metal contact is not electrically connected to the active region by the blocking layer.

    摘要翻译： 提供了CMOS图像传感器及其制造方法。 具有复位晶体管，选择晶体管，驱动晶体管和光电二极管的CMOS图像传感器包括线状的有源区，与有源区相交的驱动晶体管的栅电极，插入 在有源区和栅电极之间形成阻挡层，在有源区和栅电极的交叉区域上形成有与栅电极电连接的金属触点，其中金属触点不与活性区电连接 区域由阻挡层。

    Isolation layer for CMOS image sensor and fabrication method thereof
    9.
    发明申请
    Isolation layer for CMOS image sensor and fabrication method thereof 有权
    CMOS图像传感器的隔离层及其制造方法

    公开(公告)号：US20050093088A1

    公开(公告)日：2005-05-05

    申请号：US10882485

    申请日：2004-06-30

    申请人： Kyung-Lak Lee

    发明人： Kyung-Lak Lee

    IPC分类号： H01L27/146 ,  H01L31/00

    CPC分类号： H01L27/14643 ,  H01L27/1463 ,  H01L27/14689

    摘要： The present invention relates to an isolation layer for CMOS image sensor and a fabrication method thereof, which are capable of improving a low light level characteristic of the CMOS image sensor. The isolation layer includes: a field insulating layer formed on a predetermined portion of a substrate in the logic area to thereby define an active area and a field area; a field stop ion implantation area formed on a predetermined portion of the substrate in the pixel area, the field stop ion implantation area having a predetermined depth from a surface of the substrate to define an active area and a field area; and an oxide layer deposited on a substrate surface corresponding to the field stop ion implantation area.

    摘要翻译： 本发明涉及CMOS图像传感器的隔离层及其制造方法，其能够改善CMOS图像传感器的低光水平特性。 隔离层包括：场绝缘层，形成在逻辑区域中的基板的预定部分上，从而限定有源区域和场区域; 形成在所述像素区域中的所述基板的预定部分上的场停止离子注入区域，所述场停止离子注入区域从所述衬底的表面具有预定深度以限定有源区域和场区域; 以及沉积在对应于场停止离子注入区域的衬底表面上的氧化物层。