Invention Grant
US07135362B2 Isolation layer for CMOS image sensor and fabrication method thereof
有权
CMOS图像传感器的隔离层及其制造方法
- Patent Title: Isolation layer for CMOS image sensor and fabrication method thereof
- Patent Title (中): CMOS图像传感器的隔离层及其制造方法
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Application No.: US10882485Application Date: 2004-06-30
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Publication No.: US07135362B2Publication Date: 2006-11-14
- Inventor: Kyung-Lak Lee
- Applicant: Kyung-Lak Lee
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff Taylor & Zafman
- Priority: KR10-2003-0075963 20031029
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/00 ; H01L21/336 ; H01L31/00 ; H01L31/113
Abstract:
The present invention relates to an isolation layer for CMOS image sensor and a fabrication method thereof, which are capable of improving a low light level characteristic of the CMOS image sensor. The isolation layer includes: a field insulating layer formed on a predetermined portion of a substrate in the logic area to thereby define an active area and a field area; a field stop ion implantation area formed on a predetermined portion of the substrate in the pixel area, the field stop ion implantation area having a predetermined depth from a surface of the substrate to define an active area and a field area; and an oxide layer deposited on a substrate surface corresponding to the field stop ion implantation area.
Public/Granted literature
- US20050093088A1 Isolation layer for CMOS image sensor and fabrication method thereof Public/Granted day:2005-05-05
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