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    Method of forming double junction region and method of forming transfer transistor using the same
    1.
    发明授权
    Method of forming double junction region and method of forming transfer transistor using the same 有权
    形成双结区域的方法和使用其形成转移晶体管的方法

    公开(公告)号：US06660604B1

    公开(公告)日：2003-12-09

    申请号：US10314442

    申请日：2002-12-09

    申请人： Kyung Pil Hwang ,  Seoung Ouk Choi

    发明人： Kyung Pil Hwang ,  Seoung Ouk Choi

    IPC分类号： H01L21336

    CPC分类号： H01L21/26513 ,  H01L21/28512 ,  H01L21/324 ,  H01L21/76802 ,  H01L27/115

    摘要： The present invention relates to a method of forming a dual junction region and a method of forming a transfer transistor using the same. A low-concentration junction region is formed. A high-concentration junction region is formed at a portion of the low-concentration junction region by performing a high-concentration ion implantation process an ion implantation mask for an interlayer dielectric film in which a contact hole is formed so that the portion of the low-concentration junction region is exposed. With this structure, the distance between the high-concentration junction region and the well is sufficiently secured by controlling the distance between the high-concentration junction region and the well using the width of the contact hole formed in the interlayer dielectric film. Therefore, a stable characteristic can be secured upon application of a subsequent high voltage bias.

    摘要翻译： 本发明涉及形成双结区域的方法和使用其形成转移晶体管的方法。 形成低浓度结区。 通过对其中形成有接触孔的层间电介质膜的离子注入掩模进行高浓度离子注入处理，在低浓度结区的一部分处形成高浓度结区， - 浓度接合区域被暴露。 利用这种结构，通过使用在层间电介质膜中形成的接触孔的宽度来控制高浓度接合区域和阱之间的距离，可以充分确保高浓度接合区域与阱之间的距离。 因此，在施加随后的高电压偏压时可以确保稳定的特性。

    Non-volatile memory device
    5.
    发明授权
    Non-volatile memory device 有权
    非易失性存储器件

    公开(公告)号：US07715233B2

    公开(公告)日：2010-05-11

    申请号：US12044441

    申请日：2008-03-07

    申请人： Kyung Pil Hwang ,  Won Sic Woo

    发明人： Kyung Pil Hwang ,  Won Sic Woo

    IPC分类号： G11C16/04

    CPC分类号： G11C16/0483 ,  G11C16/08

    摘要： A non-volatile memory device is provided. In an aspect, the non-volatile memory device includes two or more common source lines that are included in one memory cell block in order to distribute the current that could have been concentrated on one common source line. As a result, the bouncing phenomenon generated by the nose of the source line can be reduced. That is, at the time of a verifying operation performed during a program operation, the current concentrated on a common source line can be distributed and, therefore, the occurrence of under-programmed cells can be prevented.

    摘要翻译： 提供了一种非易失性存储器件。 在一方面，非易失性存储器件包括两个或更多个公共源极线，其被包括在一个存储器单元块中，以便分配可能集中在一个公共源极线上的电流。 结果，可以减少由源极线的鼻子产生的弹跳现象。 也就是说，在编程操作期间执行的验证操作时，集中在公共源极线上的电流可以被分配，因此可以防止欠编程单元的发生。

    NON-VOLATILE MEMORY DEVICE
    6.
    发明申请
    NON-VOLATILE MEMORY DEVICE 有权
    非易失性存储器件

    公开(公告)号：US20090003072A1

    公开(公告)日：2009-01-01

    申请号：US12044441

    申请日：2008-03-07

    申请人： Kyung Pil Hwang ,  Won Sic Woo

    发明人： Kyung Pil Hwang ,  Won Sic Woo

    IPC分类号： G11C16/06

    CPC分类号： G11C16/0483 ,  G11C16/08

    摘要： A non-volatile memory device is provided. In an aspect, the non-volatile memory device includes two or more common source lines that are included in one memory cell block in order to distribute the current that could have been concentrated on one common source line. As a result, the bouncing phenomenon generated by the nose of the source line can be reduced. That is, at the time of a verifying operation performed during a program operation, the current concentrated on a common source line can be distributed and, therefore, the occurrence of under-programmed cells can be prevented.

    摘要翻译： 提供了一种非易失性存储器件。 在一方面，非易失性存储器件包括两个或更多个公共源极线，其被包括在一个存储器单元块中，以便分配可能集中在一个公共源极线上的电流。 结果，可以减少由源极线的鼻子产生的弹跳现象。 也就是说，在编程操作期间执行的验证操作时，集中在公共源极线上的电流可以被分配，因此可以防止欠编程单元的发生。