The present invention relates to a method of forming a dual junction region and a method of forming a transfer transistor using the same. A low-concentration junction region is formed. A high-concentration junction region is formed at a portion of the low-concentration junction region by performing a high-concentration ion implantation process an ion implantation mask for an interlayer dielectric film in which a contact hole is formed so that the portion of the low-concentration junction region is exposed. With this structure, the distance between the high-concentration junction region and the well is sufficiently secured by controlling the distance between the high-concentration junction region and the well using the width of the contact hole formed in the interlayer dielectric film. Therefore, a stable characteristic can be secured upon application of a subsequent high voltage bias.