摘要:
Disclosed herein are a penile tumescence diagnosis device and method. The penile tumescence diagnosis device includes: a plurality of ring sensors configured to measure a body part of a user and generate sensor-sensed information; and a processor configured to generate diagnostic information about the body part of the user based on the sensor-sensed information generated by the plurality of ring sensors. The plurality of ring sensors includes: a first ring sensor configured to have a first threshold length and be disposed on the body part to surround the body part in a ring shape; and a second ring sensor configured to have a second threshold length larger than the first threshold length and be disposed on the body part to surround the body part in a ring shape.
摘要:
A method of fabricating a semiconductor device is described. The method of fabricating a semiconductor device comprises providing a fin formed to protrude from a substrate and a plurality of gate electrodes formed on the fin to intersect the fin; forming first recesses in the fin on at least one side of the respective gate electrodes; forming an oxide layer on the surfaces of the first recesses; and expanding the first recesses into second recesses by removing the oxide layer. Related devices are also disclosed.
摘要:
A semiconductor device includes a substrate, an isolation layer on the substrate, and at least one active fin on the substrate. The isolation layer includes a first surface opposite a second surface. The first surface is contiguous with the substrate. The at least one active fin protrudes from the substrate and includes a first region having a side wall above the second surface of the isolation layer and a second region on the first region. The second region has an upper surface. The first region has a first width contiguous with the second surface of the isolation layer and a second width contiguous with the second region. The second width is 60% or greater than the first width (e.g., 60% to 100%).
摘要:
There is provided a multilayer ceramic electronic component including: a ceramic body including a dielectric layer; a plurality of internal electrodes disposed within the ceramic body to face each other, having the dielectric layer interposed therebetween; and external electrodes electrically connected to the plurality of internal electrodes, wherein the ceramic body includes an active layer corresponding to a capacitance forming part and a cover layer formed on at least one of an upper surface and a lower surface of the active layer and corresponding to a non-capacitance forming part, an average thickness of the cover layer is 15 μm or less, the external electrodes include a conductive metal and glass portions, and when an average length of the glass portions in a length direction of the external electrodes is Ls, Ls≦10 μm is satisfied.
摘要:
The present invention relates to a method for preparing titanium dioxide paste for dye sensitized solar cell, and more specifically a method for preparing titanium dioxide paste fir dye sensitized solar cell, which is curable at a low temperature and is able to form a uniform coating layer and exhibits relatively high energy conversion efficiency. The present invention also relates to a method for preparing low temperature curable paste which requires no separate dye adsorption process or can improve energy conversion efficiency by adding dye or metal precursor in advance.
摘要:
There are provided a multilayer ceramic electronic component and a method of manufacturing the same. The multilayer ceramic electronic component includes: a ceramic body including a dielectric layer; first and second internal electrodes disposed within the ceramic body to face each other, while having the dielectric layer interposed therebetween; and first external electrodes electrically connected to first and second internal electrodes and second external electrodes formed on the first external electrodes, wherein the first and second external electrodes include a conductive metal and a glass, and when the second external electrodes are divided into three equal parts in a thickness direction, an area of the glass in central parts thereof with respect to an area of the central parts is 30 to 80%. Therefore, sealing properties of a chip is improved, whereby a multilayer ceramic electronic component having improved reliability may be implemented.
摘要:
There are provided a multilayer ceramic electronic component, and a method of fabricating the same. The multilayer ceramic electronic component includes: a ceramic main body including a dielectric layer; first and second internal electrodes disposed to face each other within the ceramic main body; and a first external electrode and a second external electrode, wherein the first and second external electrodes include a conductive metal and glass, and when at least one of the first and second external electrodes is divided into three equal parts in a thickness direction, an area of the glass in a central part thereof is 35% to 80% of the total area of the central part. A multilayer ceramic electronic component having improved reliability may be implemented by enhancing chip air-tightness.
摘要:
Provided is a touch screen that includes a first sensor layer and a second sensor layer. The first sensor layer and the second sensor layer form a sensor for recognizing a touch position on the touch screen.
摘要:
A field emission display device (FED) is provided. The FED includes a first substrate, a phosphor layer being in contact with the first substrate, and an anode electrode on the phosphor layer. The FED further includes a second substrate facing the first substrate and including a cathode electrode and an emitter disposed toward the anode electrode.
摘要:
In an embodiment, a storage electrode of a capacitor in a semiconductor device is resistant to inadvertent etching during its manufacturing processes. A method of forming the storage electrode of the capacitor is described. The storage electrode of the capacitor may include a first metal layer electrically connected with a source region of a transistor through a contact plug penetrating an insulating layer on a semiconductor substrate. A polysilicon layer may then be formed on the first metal layer. A second metal layer is formed on the polysilicon layer.