Micromechanical capacitive acceleration sensor
    1.
    发明授权
    Micromechanical capacitive acceleration sensor 有权
    微机电容加速度传感器

    公开(公告)号:US07343801B2

    公开(公告)日:2008-03-18

    申请号:US10471296

    申请日:2002-03-07

    IPC分类号: G01P15/125

    摘要: A micromechanical capacitive acceleration sensor is described for picking up the acceleration of an object in at least one direction. The sensor includes a frame structure (110), a sensor inertia mass (101) made of a wafer and movably mounted relative to the frame structure (110) about a rotation axis, and a capacitive pick-up unit (120) for producing at least one capacitive output signal representing the position of the sensor mass (101) relative to the frame structure (110). The sensor inertia mass (101) has a center of gravity which offset relative to the rotation axis in a direction perpendicularly to a wafer plane for measuring accelerations laterally to the wafer plane. The sensor mass (101) and the frame structure (110) are made monolithically of one single crystal silicon wafer. A cover section (112) forms a common connector plane (150) for the connection of capacitor electrodes (125,126). Torqueable elements (105) form an electrically conducting bearing device for the sensor mass (101).

    摘要翻译: 描述了一种微机电容加速度传感器,用于拾取至少一个方向的物体的加速度。 该传感器包括框架结构(110),由晶片制成的传感器惯性质量块(101),并围绕旋转轴线相对于框架结构(110)可移动地安装;以及电容式拾取单元(120) 表示传感器质量块(101)相对于框架结构(110)的位置的至少一个电容式输出信号。 传感器惯性质量(101)具有垂直于晶片平面的方向相对于旋转轴偏移的重心,用于测量横向于晶片平面的加速度。 传感器质量(101)和框架结构(110)由一个单晶硅晶片制成一体。 盖部分(112)形成用于连接电容器电极(125,126)的公共连接器平面(150)。 扭矩元件(105)形成用于传感器质量块(101)的导电轴承装置。

    Micromechanical capacitive acceleration sensor
    2.
    发明申请
    Micromechanical capacitive acceleration sensor 有权
    微机电容加速度传感器

    公开(公告)号:US20060156818A1

    公开(公告)日:2006-07-20

    申请号:US10471296

    申请日:2002-03-07

    IPC分类号: G01P15/125

    摘要: A micromechanical capacitive acceleration sensor is described for picking up the acceleration of an object in at least one direction. The sensor includes a frame structure (110), a sensor inertia mass (101) made of a wafer and movably mounted relative to the frame structure (110) about a rotation axis, and a capacitive pick-up unit (120) for producing at least one capacitive output signal representing the position of the sensor mass (101) relative to the frame structure (110). The sensor inertia mass (101) has a center of gravity which offset relative to the rotation axis in a direction perpendicularly to a wafer plane for measuring accelerations laterally to the wafer plane. The sensor mass (101) and the frame structure (110) are made monolithically of one single crystal silicon wafer. A cover section (112) forms a common connector plane (150) for the connection of capacitor electrodes (125,126). Torqueable elements (105) form an electrically conducting bearing device for the sensor mass (101).

    摘要翻译: 描述了一种微机电容加速度传感器,用于拾取至少一个方向的物体的加速度。 该传感器包括框架结构(110),由晶片制成的传感器惯性质量块(101),并围绕旋转轴线相对于框架结构(110)可移动地安装;以及电容式拾取单元(120) 表示传感器质量块(101)相对于框架结构(110)的位置的至少一个电容式输出信号。 传感器惯性质量(101)具有垂直于晶片平面的方向相对于旋转轴偏移的重心,用于测量横向于晶片平面的加速度。 传感器质量(101)和框架结构(110)由一个单晶硅晶片制成一体。 盖部分(112)形成用于连接电容器电极(125,126)的公共连接器平面(150)。 扭矩元件(105)形成用于传感器质量块(101)的导电轴承装置。

    Multiaxial monolithic acceleration sensor
    3.
    发明申请
    Multiaxial monolithic acceleration sensor 审中-公开
    多轴单片加速度传感器

    公开(公告)号:US20060021436A1

    公开(公告)日:2006-02-02

    申请号:US10517808

    申请日:2003-06-10

    IPC分类号: G01P15/18 G01P15/02

    摘要: A multi-axial monolithic acceleration sensor has the following features. The acceleration sensor consists of plural individual sensors with respectively a main sensitivity axis arranged on a common substrate. Each individual sensor is rotatably moveably suspended on two torsion spring elements and has a seismic mass with a center of gravity. Each individual sensor has components that measure the deflection of the seismic mass. The acceleration sensor preferably consists of at least three identical individual sensors. Each individual sensor is suspended eccentrically relative to its center of gravity and is rotated by 90°, 180° or 270° relative to the other individual sensors.

    摘要翻译: 多轴单片加速度传感器具有以下特点。 加速度传感器由多个单独的传感器组成,分别具有布置在公共基板上的主灵敏度轴。 每个单独的传感器可旋转地可移动地悬挂在两个扭转弹簧元件上并且具有重心的地震质量。 每个单独的传感器具有测量地震质量的偏转的组件。 加速度传感器优选地由至少三个相同的单独传感器组成。 每个传感器相对于其重心偏心悬挂,并相对于其他单独的传感器旋转90°,180°或270°。

    Microsensor with a resonator structure
    4.
    发明授权
    Microsensor with a resonator structure 有权
    具有谐振器结构的微传感器

    公开(公告)号:US06389898B1

    公开(公告)日:2002-05-21

    申请号:US09424542

    申请日:2000-02-22

    IPC分类号: G01P1510

    摘要: A microsensor with a resonator structure, which is excited by first electrical signals to oscillate and emits second electrical signals in dependence on the measuring variable, wherein a heating element, supplied with at least one of the first electrical signals, is arranged on the resonator structure for the thermal excitations of oscillations. For the thermal excitation of lateral oscillations in a microsensor with a resonator structure, the microsensor is provided at one oscillating part of the resonator structure with at least two regions that are thermally separated by a zone with reduced heat conductance, and the heating element is arranged on one of the regions. This type of arrangements permits the excitation of the resonator structure to lateral oscillations if the heating element is supplied with corresponding current pulses. It is advantageous if a receiving element is arranged on at least one of the other regions to detect the oscillation amplitude.

    摘要翻译: 一种具有谐振器结构的微传感器,其由第一电信号激发,以根据测量变量振荡并发出第二电信号,其中提供有至少一个第一电信号的加热元件布置在谐振器结构 用于振荡的热激发。 对于具有谐振器结构的微传感器中的横向振荡的热激发,微传感器被提供在谐振器结构的一个振荡部分处,具有至少两个区域,该区域被热导率降低的区域热隔离,并且加热元件布置 在其中一个地区。 如果加热元件被提供相应的电流脉冲,这种类型的布置允许谐振器结构的激励到横向振荡。 接收元件布置在至少一个其它区域上以检测振荡幅度是有利的。

    Sensor having a resonance structure, especially an acceleration or rotation rate sensor, and a device for carrying out a self-test
    5.
    发明授权
    Sensor having a resonance structure, especially an acceleration or rotation rate sensor, and a device for carrying out a self-test 有权
    具有共振结构的传感器,特别是加速度或转速传感器,以及用于执行自检的装置

    公开(公告)号:US06564637B1

    公开(公告)日:2003-05-20

    申请号:US09806404

    申请日:2001-05-15

    IPC分类号: G01P904

    摘要: A self-testing sensor (especially to measure an angular rate or acceleration) includes a resonant structure, an actor unit configured to excite the structure to a first periodic vibration, a piezoresistive element configured to generate an output signal that depends on the measured quantity, and an isolator configured to isolate a test signal component from the output signal, whereby the test signal component is generated by a second periodic vibration of the structure superposed on the first vibration. A device for self-testing a sensor includes an isolator configured to isolate a test signal component superposed on a useful signal component from the periodic output signal of the sensor, and it includes a comparator configured to compare the test signal component with a predefined value or a test signal fed to the sensor. For the self-test, a second periodic vibration is superposed on a first vibration of the structure, and an output signal containing information on the measured quantity is determined. A test signal component contained in the output signal is monitored.

    摘要翻译: 自检传感器(特别是用于测量角速率或加速度)包括谐振结构,被配置为将结构激发到第一周期性振动的动作单元,配置成产生取决于测量量的输出信号的压阻元件, 以及隔离器,被配置为将测试信号分量与输出信号隔离,由此通过叠加在第一振动上的结构的第二周期性振动来产生测试信号分量。 用于对传感器进行自检的装置包括:隔离器,被配置为将叠加在有用信号分量上的测试信号分量与传感器的周期性输出信号隔离,并且其包括比较器,其被配置为将测试信号分量与预定义的值进行比较, 测试信号馈送到传感器。 对于自检,第二周期振动叠加在结构的第一振动上,并且确定包含关于测量量的信息的输出信号。 监视输出信号中包含的测试信号分量。

    Micromechanical enclosure
    6.
    发明授权
    Micromechanical enclosure 有权
    微机械外壳

    公开(公告)号:US06483160B2

    公开(公告)日:2002-11-19

    申请号:US09909030

    申请日:2001-07-19

    IPC分类号: H01L2982

    摘要: A micromechanical enclosure suitable for micromechanical sensors, particularly acceleration sensors in the field of automotive vehicles, includes a micromechanical structure on a substrate, a conductor track layer connected to the micromechanical structure on the main surface of the substrate, a cover that covers a part of the main surface of the substrate, and a level compensation layer arranged next to the conductor track layer beneath the contact area during the manufacture of the wafer. A planarizing layer, which forms a level surface, may additionally be applied above this, to form a level area on the substrate which can easily be joined to a level area of the cover by means of a metallic wafer bond. This achieves small overall dimensions and avoids a glass frit bond.

    摘要翻译: 适用于微机械传感器,特别是机动车辆领域的加速度传感器的微机械罩包括在基板上的微机械结构,在基板的主表面上连接到微机械结构的导体轨道层,覆盖一部分 衬底的主表面,以及在晶片制造期间在接触区域下方布置在导体轨道层旁边的电平补偿层。 形成水平表面的平坦化层可以另外在其上施加,以在衬底上形成能够通过金属晶片接合容易地接合到覆盖层的水平面的水平面。 这实现了小的整体尺寸并且避免了玻璃料粘结。

    System for the measurement of acceleration in three axes
    7.
    发明授权
    System for the measurement of acceleration in three axes 失效
    三轴加速度测量系统

    公开(公告)号:US6122965A

    公开(公告)日:2000-09-26

    申请号:US980795

    申请日:1997-12-01

    摘要: A system for measuring acceleration in three axes comprises four individual sensors arranged in a rectangle on a common substrate with each having one main sensitivity axis. Each individual sensor has a seismic mass in the form of a cantilevered paddle connected by a bending beam to an outer frame and having a center of gravity. Each beam is arranged parallel to the substrate surface and each contains means for measuring the bending that occurs when acceleration forces act upon the system. The actual acceleration occurring on each axis can then be determined as a function of the error angle formed between the sensitivity axis and the normal to the substrate surface.

    摘要翻译: 用于测量三轴加速度的系统包括四个单独的传感器,其布置在公共基板上的矩形中,每个具有一个主灵敏度轴。 每个单独的传感器具有通过弯曲梁连接到外框并具有重心的悬臂桨形式的抗震质量。 每个梁平行于基板表面布置,并且每个梁包含用于测量当加速力作用于系统时发生的弯曲的装置。 然后可以确定每个轴上发生的实际加速度是在灵敏度轴与基板表面法线之间形成的误差角的函数。

    Fiber optic sensor for detecting mechanicl quantities
    8.
    发明授权
    Fiber optic sensor for detecting mechanicl quantities 失效
    用于检测机械量的光纤传感器

    公开(公告)号:US4848871A

    公开(公告)日:1989-07-18

    申请号:US252754

    申请日:1988-10-03

    IPC分类号: G01D5/34 G01D5/26 G01D5/353

    CPC分类号: G01D5/268

    摘要: A fiber optic sensor for the detection of mechanical quantities comprising a light source, a first fiber optic waveguide coupled to the light source, the front face of the first waveguide being ground at a 45.degree. angle to the axis of the fiber and mirrored, a second fiber optic waveguide arranged parallel to the first waveguide, the front face of the second waveguide being ground at a 45.degree. angle to the axis of the fiber and mirrored, the two mirrored faces being held opposite to one another, and a photoelement receiver coupled to the other end of the second waveguide. At least one of the waveguides can move either along the fiber axis or around the fiber axis relative to the other waveguide, the motion varying the light received by the receiver and thereby indicating the magnitude of the mechanical quantity.

    摘要翻译: 一种用于检测机械量的光纤传感器,包括光源,耦合到光源的第一光纤波导,第一波导的前表面以与光纤的轴成45度的角度被研磨并镜像, 第二光纤波导,其平行于第一波导布置,第二波导的前表面与光纤的轴成45度角并被镜像,两个镜面彼此相对保持,并且光电元件接收器 到第二波导的另一端。 波导中的至少一个可以相对于另一个波导沿着光纤轴线或围绕光纤轴线移动,该运动改变由接收器接收的光,从而指示机械量的大小。

    Method for producing insulation structures
    10.
    发明申请
    Method for producing insulation structures 有权
    绝缘结构的制造方法

    公开(公告)号:US20060121735A1

    公开(公告)日:2006-06-08

    申请号:US10527789

    申请日:2003-09-12

    IPC分类号: H01L21/302 H01L21/461

    摘要: The invention relates to processes for the formation of isolation structures for micro-machined sensors in single-crystal surface technology. In known processes, silicon structures defined by deep trenches are etched and uncovered by a “release etch” step also at their bottom surface towards the substrate. The subsequent lining of these trenches with a non-conducting insulating material, such as silicon dioxide leads to a firm anchoring by means of a surrounding of the silicon structure with the lined trenches on three sides, leaving one side uncovered. It is the main idea of the invention—instead of lining the trenches—to convert thin-walled silicon into an electrically non-conducting material. This can, for instance, be accomplished by means of a thermal oxidation of narrow silicon ribs released prior thereto by trenches. In the minimal configuration, two trenches (holes) per rib with the required structure depth must be etched for this purpose. The silicon rib between them must be narrow enough to permit its complete thermal through oxidation.

    摘要翻译: 本发明涉及用于在单晶表面技术中形成用于微加工传感器的隔离结构的方法。 在已知的工艺中,由深沟槽限定的硅结构通过在其底表面朝向衬底的“释放蚀刻”步骤被蚀刻和未覆盖。 这些具有非导电绝缘材料(例如二氧化硅)的这些沟槽的后续衬里导致通过硅结构的周围与三面沟槽在三面上的牢固锚定,留下一侧未覆盖。 本发明的主要思想是将薄壁硅转化为非导电材料,而不是将沟槽衬里。 这可以例如通过在其之前通过沟槽释放的窄硅肋的热氧化来实现。 在最小的构造中,为了这个目的,必须蚀刻每个具有所需结构深度的肋的两个沟槽(孔)。 它们之间的硅筋必须足够窄以使其完全通过热氧化。