摘要:
A micromechanical capacitive acceleration sensor is described for picking up the acceleration of an object in at least one direction. The sensor includes a frame structure (110), a sensor inertia mass (101) made of a wafer and movably mounted relative to the frame structure (110) about a rotation axis, and a capacitive pick-up unit (120) for producing at least one capacitive output signal representing the position of the sensor mass (101) relative to the frame structure (110). The sensor inertia mass (101) has a center of gravity which offset relative to the rotation axis in a direction perpendicularly to a wafer plane for measuring accelerations laterally to the wafer plane. The sensor mass (101) and the frame structure (110) are made monolithically of one single crystal silicon wafer. A cover section (112) forms a common connector plane (150) for the connection of capacitor electrodes (125,126). Torqueable elements (105) form an electrically conducting bearing device for the sensor mass (101).
摘要:
A micromechanical capacitive acceleration sensor is described for picking up the acceleration of an object in at least one direction. The sensor includes a frame structure (110), a sensor inertia mass (101) made of a wafer and movably mounted relative to the frame structure (110) about a rotation axis, and a capacitive pick-up unit (120) for producing at least one capacitive output signal representing the position of the sensor mass (101) relative to the frame structure (110). The sensor inertia mass (101) has a center of gravity which offset relative to the rotation axis in a direction perpendicularly to a wafer plane for measuring accelerations laterally to the wafer plane. The sensor mass (101) and the frame structure (110) are made monolithically of one single crystal silicon wafer. A cover section (112) forms a common connector plane (150) for the connection of capacitor electrodes (125,126). Torqueable elements (105) form an electrically conducting bearing device for the sensor mass (101).
摘要:
A multi-axial monolithic acceleration sensor has the following features. The acceleration sensor consists of plural individual sensors with respectively a main sensitivity axis arranged on a common substrate. Each individual sensor is rotatably moveably suspended on two torsion spring elements and has a seismic mass with a center of gravity. Each individual sensor has components that measure the deflection of the seismic mass. The acceleration sensor preferably consists of at least three identical individual sensors. Each individual sensor is suspended eccentrically relative to its center of gravity and is rotated by 90°, 180° or 270° relative to the other individual sensors.
摘要:
A microsensor with a resonator structure, which is excited by first electrical signals to oscillate and emits second electrical signals in dependence on the measuring variable, wherein a heating element, supplied with at least one of the first electrical signals, is arranged on the resonator structure for the thermal excitations of oscillations. For the thermal excitation of lateral oscillations in a microsensor with a resonator structure, the microsensor is provided at one oscillating part of the resonator structure with at least two regions that are thermally separated by a zone with reduced heat conductance, and the heating element is arranged on one of the regions. This type of arrangements permits the excitation of the resonator structure to lateral oscillations if the heating element is supplied with corresponding current pulses. It is advantageous if a receiving element is arranged on at least one of the other regions to detect the oscillation amplitude.
摘要:
A self-testing sensor (especially to measure an angular rate or acceleration) includes a resonant structure, an actor unit configured to excite the structure to a first periodic vibration, a piezoresistive element configured to generate an output signal that depends on the measured quantity, and an isolator configured to isolate a test signal component from the output signal, whereby the test signal component is generated by a second periodic vibration of the structure superposed on the first vibration. A device for self-testing a sensor includes an isolator configured to isolate a test signal component superposed on a useful signal component from the periodic output signal of the sensor, and it includes a comparator configured to compare the test signal component with a predefined value or a test signal fed to the sensor. For the self-test, a second periodic vibration is superposed on a first vibration of the structure, and an output signal containing information on the measured quantity is determined. A test signal component contained in the output signal is monitored.
摘要:
A micromechanical enclosure suitable for micromechanical sensors, particularly acceleration sensors in the field of automotive vehicles, includes a micromechanical structure on a substrate, a conductor track layer connected to the micromechanical structure on the main surface of the substrate, a cover that covers a part of the main surface of the substrate, and a level compensation layer arranged next to the conductor track layer beneath the contact area during the manufacture of the wafer. A planarizing layer, which forms a level surface, may additionally be applied above this, to form a level area on the substrate which can easily be joined to a level area of the cover by means of a metallic wafer bond. This achieves small overall dimensions and avoids a glass frit bond.
摘要:
A system for measuring acceleration in three axes comprises four individual sensors arranged in a rectangle on a common substrate with each having one main sensitivity axis. Each individual sensor has a seismic mass in the form of a cantilevered paddle connected by a bending beam to an outer frame and having a center of gravity. Each beam is arranged parallel to the substrate surface and each contains means for measuring the bending that occurs when acceleration forces act upon the system. The actual acceleration occurring on each axis can then be determined as a function of the error angle formed between the sensitivity axis and the normal to the substrate surface.
摘要:
A fiber optic sensor for the detection of mechanical quantities comprising a light source, a first fiber optic waveguide coupled to the light source, the front face of the first waveguide being ground at a 45.degree. angle to the axis of the fiber and mirrored, a second fiber optic waveguide arranged parallel to the first waveguide, the front face of the second waveguide being ground at a 45.degree. angle to the axis of the fiber and mirrored, the two mirrored faces being held opposite to one another, and a photoelement receiver coupled to the other end of the second waveguide. At least one of the waveguides can move either along the fiber axis or around the fiber axis relative to the other waveguide, the motion varying the light received by the receiver and thereby indicating the magnitude of the mechanical quantity.
摘要:
Cells having cavities and the manufacture and use of the same are described. An example cell includes a first layer including a gap to at least partially define a cavity and a reservoir area to receive material to enter the cavity by diffusion. Additionally, the cell includes one or more other layers coupled to the first layer to at least partially define the cavity and to hermetically seal the cavity from an exterior environment.
摘要:
The invention relates to processes for the formation of isolation structures for micro-machined sensors in single-crystal surface technology. In known processes, silicon structures defined by deep trenches are etched and uncovered by a “release etch” step also at their bottom surface towards the substrate. The subsequent lining of these trenches with a non-conducting insulating material, such as silicon dioxide leads to a firm anchoring by means of a surrounding of the silicon structure with the lined trenches on three sides, leaving one side uncovered. It is the main idea of the invention—instead of lining the trenches—to convert thin-walled silicon into an electrically non-conducting material. This can, for instance, be accomplished by means of a thermal oxidation of narrow silicon ribs released prior thereto by trenches. In the minimal configuration, two trenches (holes) per rib with the required structure depth must be etched for this purpose. The silicon rib between them must be narrow enough to permit its complete thermal through oxidation.